ON Semiconductor BCW70LT1 Datasheet
BCW70LT1
General Purpose
Transistors
PNP Silicon
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MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature TJ, T
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
(2)
TA = 25°C
(1)
CEO
EBO
C
P
R
θJA
P
R
θJA
COLLECTOR
3
–45 Vdc
–5.0 Vdc
–100 mAdc
D
D
stg
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to
+150
mW
mW/°C
mW
mW/°C
°C
1
BASE
2
EMITTER
3
1
2
SOT–23 (TO–236AB)
CASE 318
STYLE 6
DEVICE MARKING
H2x
Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 0
x = Monthly Date Code
ORDERING INFORMATION
Device Package Shipping
BCW70LT1 SOT–23
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
3000 Units/Reel
BCW70LT1/D
BCW70LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = –2.0 mAdc, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0) V
Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V
Collector Cutoff Current
(VCB = –20 Vdc, IE = 0)
(VCB = –20 Vdc, IE = 0, TA = 100°C)
ON CHARACTERISTICS
DC Current Gain (IC = –2.0 mAdc, VCE = –5.0 Vdc) h
Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) V
Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) V
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
(BR)CEO
(BR)CES
(BR)EBO
I
CBO
FE
CE(sat)
BE(on)
C
obo
N
F
–45 — Vdc
–50 — Vdc
–5.0 — Vdc
—
—
215 500 —
— –0.3 Vdc
–0.6 –0.75 Vdc
— 7.0 pF
— 10 dB
–100
–10
nAdc
µAdc
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2
BCW70LT1
10
1.0
e
,
OISE
OLTA
E
n
1.0 M
R
,
SO
RCE
RESISTA
CE
O
MS
R
,
SO
RCE
RESISTA
CE
O
MS
1.0 M
TYPICAL NOISE CHARACTERISTICS
(VCE = –5.0 Vdc, TA = 25°C)
BANDWIDTH = 1.0 Hz
7.0
V)
5.0
(
G
V
3.0
N
1.0 mA
2.0
n
1.0
10 20 50 100 200 500 1.0 k 2.0k 5.0 k 10 k
IC = 10 µA
30 µA
100 µA
300 µA
f, FREQUENCY (Hz)
RS ≈ 0
Figure 1. Noise V oltage
7.0
5.0
3.0
2.0
1.0
0.7
0.5
, NOISE CURRENT (pA)
n
I
0.3
0.2
0.1
10 20 50 100 200 500 1.0k 2.0 k 5.0 k 10 k
IC = 1.0 mA
300 µA
100 µA
30 µA
10 µA
f, FREQUENCY (Hz)
BANDWIDTH = 1.0 Hz
RS ≈∞
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = –5.0 Vdc, TA = 25°C)
)
H
(
N
U
S
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
0.5 dB
1.0 dB
10
20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB
5.0 dB
Figure 3. Narrow Band, 100 Hz
1.0 M
500 k
)
200 k
H
100 k
(
50 k
N
20 k
10 k
5.0 k
2.0 k
U
1.0 k
S
500
200
100
20 30 50 70 100 200 300 500 700 1.0 k
10
0.5 dB
IC, COLLECTOR CURRENT (µA)
10 Hz to 15.7 kHz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
Figure 5. Wideband
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
, SOURCE RESISTANCE (OHMS)
S
500
R
200
100
0.5 dB
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
Figure 4. Narrow Band, 1.0 kHz
Noise Figure is Defined as:
2
2
2
e
)
NF+20 log
e
= Noise Voltage of the Transistor referred to the input. (Figure 3)
n
I
= Noise Current of the Transistor referred to the input.
(Figure 4)
n
K
= Boltzman’s Constant (1.38 x 10
T
= Temperature of the Source Resistance (°K)
R
= Source Resistance (Ohms)
S
10
ƪ
4KTRS)
n
4KTR
I
n
S
1ń2
R
S
ƫ
–23
j/°K)
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