ON Semiconductor BCW65ALT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by BCW65ALT1/D
NPN Silicon
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
BCW65ALT1 = EA
CEO
CBO
EBO
P
R
P
R
C
D
q
JA
D
q
JA
stg
32 Vdc
60 Vdc
5.0 Vdc
800 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
1
COLLECTOR
3
2
EMITTER
mW
mW/°C
mW
mW/°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
I
EBO
32 — — Vdc
60 — — Vdc
5.0 — — Vdc
—
—
— — 20 nAdc
—
—
20
20
nAdc
µAdc
1
BCW65ALT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted) (Continued)
A
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On Time
(IB1 = IB2 = 15 mAdc)
Turn–Off Time
(IC = 150 mAdc, RL = 150 Ω)
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
NF — — 10 dB
t
on
t
off
35
75
100
35
—
—
— — 2.0
100 — — MHz
— — 12 pF
— — 80 pF
— — 100 ns
— — 400 ns
—
—
—
—
0.7
0.3
—
220
250
—
—
—
—
Vdc
Vdc
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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