Semiconductor Components Industries, LLC, 1999
November, 1999 – Rev. 0
1 Publication Order Number:
BCW30LT1/D
BCW30LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
–32 Vdc
Collector-Base Voltage V
CBO
–32 Vdc
Emitter-Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Total Device Dissipation
FR-5 Board
(1)
TA = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
θJA
417 °C/W
Junction and Storage Temperature TJ, T
stg
–55 to
+150
°C
(1) FR–5 = 1.0 0.75 0.062 in.
(2) Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
ORDERING INFORMATION
BCW30LT1 SOT–23
http://onsemi.com
SOT–23 (TO–236AB)
CASE 318
STYLE 6
3000 Units/Rail
DEVICE MARKING
C2x
x = Monthly Date Code
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
BCW30LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = –2.0 mAdc, IE = 0)
V
(BR)CEO
–32 — Vdc
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, VEB = 0)
V
(BR)CES
–32 — Vdc
Collector–Base Breakdown Voltage
(IC = –10 µAdc, IC = 0)
V
(BR)CBO
–32 — Vdc
Emitter–Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V
(BR)EBO
–5.0 — Vdc
Collector Cutoff Current
(VCB = –32 Vdc, IE = 0)
(VCB = –32 Vdc, IE = 0, TA = 100°C)
I
CBO
—
—
–100
–10
nAdc
µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
h
FE
215 500 —
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
V
CE(sat)
— –0.3
Vdc
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
V
BE(on)
–0.6 –0.75
Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)
C
obo
— 7.0
pF
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF
— 10
dB
BCW30LT1
http://onsemi.com
3
TYPICAL NOISE CHARACTERISTICS
(VCE = –5.0 Vdc, TA = 25°C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10 20 50 100 200 500 1.0 k 2.0k 5.0 k 10 k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS ≈ 0
IC = 10 µA
100 µA
e
n
,
N
OISE
V
OLTA
G
E
(
n
V)
I
n
, NOISE CURRENT (pA)
30 µA
BANDWIDTH = 1.0 Hz
RS ≈∞
IC = 1.0 mA
300 µA
100 µA
30 µA
10 µA
10 20 50 100 200 500 1.0k 2.0k 5.0 k 10 k
2.0
1.0 mA
0.2
300 µA
NOISE FIGURE CONTOURS
(VCE = –5.0 Vdc, TA = 25°C)
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
Figure 3. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (µA)
Figure 4. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (µA)
10
0.5 dB
BANDWIDTH = 1.0 Hz
R
S
,
SO
U
RCE
RESISTA
N
CE
(
O
H
MS
)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband
IC, COLLECTOR CURRENT (µA)
10
10 Hz to 15.7 kHz
R
S
,
SO
U
RCE
RESISTA
N
CE
(
O
H
MS
)
Noise Figure is Defined as:
NF+20 log
10
ƪ
e
n
2
)
4KTRS)
I
n
2
R
S
2
4KTR
S
ƫ
1ń2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
–23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
1.0 dB
2.0 dB
3.0 dB
20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0k
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
20 30 50 70 100 200 300 500 700 1.0 k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
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