ON Semiconductor BCP69T3, BCP69T1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
• High Current: IC = –1.0 Amp
• The SOT-223 Package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die.
• Available in 12 mm Tape and Reel
Use BCP69T1 to order the 7 inch/1000 unit reel.
Use BCP69T3 to order the 13 inch/4000 unit reel.
• NPN Complement is BCP68
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Emitter Voltage V
CEO
–25 Vdc
Collector-Base Voltage V
CBO
–20 Vdc
Emitter-Base Voltage V
EBO
–5.0 Vdc
Collector Current I
C
–1.0 Adc
Total Power Dissipation @ TA = 25°C
(1)
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Temperature Range TJ, T
stg
–65 to 150 °C
DEVICE MARKING
CE
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) R
θJA
83.3 °C/W
Lead T emperature for Soldering, 0.0625″ from case
Time in Solder Bath
T
L
260
10
°C
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by BCP69T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 2
BCP69T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristics
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, IE = 0) V
(BR)CES
–25 — — Vdc
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V
(BR)CEO
–20 — — Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V
(BR)EBO
–5.0 — — Vdc
Collector-Base Cutoff Current (VCB = –25 Vdc, IE = 0) I
CBO
— — –10 µAdc
Emitter-Base Cutoff Current (VEB = –5.0 Vdc, IC = 0) I
EBO
— — –10 µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 Adc, VCE = –1.0 Vdc)
h
FE
50
85
60
—
—
—
—
375
—
—
Collector-Emitter Saturation Voltage (IC = –1.0 Adc, IB = –100 mAdc) V
CE(sat)
— — –0.5 Vdc
Base-Emitter On Voltage (IC = –1.0 Adc, VCE = –1.0 Vdc) V
BE(on)
— — –1.0 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc)
f
T
— 60 — MHz
TYPICAL ELECTRICAL CHARACTERISTICS
200
100
70
20
–10 –100 –1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
f , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
Figure 2. Current Gain Bandwidth Product
300
200
100
30
70
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
Figure 3. Saturation and “ON” Voltages
0
160
0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
C, CAPACITANCE (pF)
50
h
FE
, CURRENT GAIN
VCE = –1.0 V
TJ = 25
°
C
50
–10 –100 –1000
VCE = –10 V
TJ = 25
°
C
f = 30 MHz
–1.0
–0.8
–0.6
–0.4
–0.2
–1.0 –100 –1000–10
V
(BE)sat
@ IC/IB = 10
TJ = 25°C
V
(BE)on
@ VCE = –1.0 V
V
(CE)sat
@ IC/IB = 10
120
80
40
C
ob
C
ib
–5.0
–1.0
–2.0
–4.0
–2.5
–5.0
C
ib
Cob
TJ = 25°C
–1.0
–2.0
–1.5
–3.0
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