ON Semiconductor BCP68T1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP68T1/D
Motorola Preferred Device
This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
• High Current: IC = 1.0 Amp
• The SOT-223 Package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
• Available in 12 mm Tape and Reel
Use BCP68T1 to order the 7 inch/1000 unit reel.
COLLECTOR 2,4
Use BCP68T3 to order the 13 inch/4000 unit reel.
• The PNP Complement is BCP69T1
(T
MAXIMUM RATINGS
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range TJ, T
= 25°C unless otherwise noted)
C
Rating
(1)
BASE
1
EMITTER 3
Symbol Value Unit
CEO
CBO
EBO
C
P
D
stg
DEVICE MARKING
CA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance — Junction-to-Ambient (surface mounted) R
Maximum Temperature for Soldering Purposes
Time in Solder Bath
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
θJA
T
L
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
25 Vdc
20 Vdc
5 Vdc
1 Adc
1.5
12
–65 to 150 °C
83.3 °C/W
260
10
Watts
mW/°C
°C
Sec
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
BCP68T1
ELECTRICAL CHARACTERISTICS
Characteristics
(T
= 25°C unless otherwise noted)
A
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector-Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
Base-Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc)
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Symbol Min Typ Max Unit
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
25 — — Vdc
20 — — Vdc
5.0 — — Vdc
— — 10 µAdc
— — 10 µAdc
50
85
60
— — 0.5 Vdc
— — 1.0 Vdc
— 60 — MHz
—
—
—
—
375
—
—
300
200
100
, DC CURRENT GAIN
FE
h
10
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 125°C
= 25°C
= –55°C
VCE = 1.0 V
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
300
200
100
70
50
T
30
1000100101.0
f , CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
VCE = 10 V
TJ = 25
°
C
f = 30 MHz
IC, COLLECTOR CURRENT (mA)
100010010 200
Figure 2. Current-Gain-Bandwidth Product
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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