ON Semiconductor 2N6609, 2N3773 Datasheet

Motorola Bipolar Power Transistor Device Data

   

The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

• High Safe Operating Area (100% Tested) 150 W @ 100 V

• Completely Characterized for Linear Operation

• High DC Current Gain and Low Saturation Voltage

hFE = 15 (Min) @ 8 A, 4 V V

CE(sat)

= 1.4 V (Max) @ IC = 8 A, IB = 0.8 A

• For Low Distortion Complementary Designs

*MAXIMUM RATINGS

Rating

Symbol

ОООООООО

Value

ÎÎÎÎ

Unit

Collector Emitter Voltage

CEO

ОООООООО

140

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

CEX

ОООООООО

160

ÎÎÎÎ

Vdc

Collector–Base Voltage

CBO

ОООООООО

160

ÎÎÎÎ

Vdc

Emitter–Base Voltage

EBO

ОООООООО

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

ОООООООО

16 30

ÎÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

ОООООООО

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

ОООООООО

150

0.855

ÎÎÎÎ

Watts W/_C

Operating and Storage Junction

Temperature Range

TJ, T

stg

ОООООООО

–65 to +200

ÎÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

θJC

ОООООООО

1.17

ÎÎÎÎ

C/W

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N3773/D

 Motorola, Inc. 1995

 





*Motorola Preferred Device

16 AMPERE

COMPLEMENTARY

POWER TRANSISTORS

140 VOLTS

150 WATTS



CASE 1–07

TO–204AA

(TO–3)

REV 7

 

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

*Collector–Emitter Breakdown Voltage

(IC = 0.2 Adc, IB = 0)

ÎÎÎÎ

CEO(sus)

140

—

ÎÎÎ

Vdc

*Collector–Emitter Sustaining Voltage

(IC = 0.1 Adc, V

BE(off)

= 1.5 Vdc, RBE = 100 Ohms)

ÎÎÎÎ

CEX(sus)

160

—

ÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage

(IC = 0.2 Adc, RBE = 100 Ohms)

ÎÎÎÎ

CER(sus)

150

—

ÎÎÎ

Vdc

*Collector Cutoff Current

(VCE = 120 Vdc, IB = 0)

ÎÎÎÎ

CEO

—

ÎÎÎ

mAdc

*Collector Cutoff Current

(VCE = 140 Vdc, V

BE(off)

= 1.5 Vdc)

(VCE = 140 Vdc, V

BE(off)

= 1.5 Vdc, TC = 150_C)

ÎÎÎÎ

CEX

— —

ÎÎÎ

mAdc

Collector Cutoff Current

(VCB = 140 Vdc, IE = 0)

ÎÎÎÎ

CBO

—

ÎÎÎ

mAdc

*Emitter Cutoff Current

(VBE = 7 Vdc, IC = 0)

ÎÎÎÎ

EBO

—

ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

*(IC = 8 Adc, VCE = 4 Vdc)

(IC = 16 Adc, VCE = 4 Vdc)

ÎÎÎÎ

60 —

ÎÎÎ

—

Collector–Emitter Saturation Voltage

*(IC = 8 Adc, IB = 800 mAdc)

(IC = 16 Adc, IB = 3.2 Adc)

ÎÎÎÎ

CE(sat)

— —

1.4 4

ÎÎÎ

Vdc

*Base–Emitter On Voltage

(IC = 8 Adc, VCE = 4 Vdc)

ÎÎÎÎ

BE(on)

—

2.2

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common–Emitter

Small–Signal, Short–Circuit, Forward Current Transfer Ratio

(IC = 1 A, f = 50 kHz)

ÎÎÎÎ

|hfe|

—

ÎÎÎ

—

*Small–Signal Current Gain

(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)

ÎÎÎÎ

—

ÎÎÎ

—

SECOND BREAKDOWN CHARACTERISTICS

Second Breakdown Collector Current with Base Forward Biased

t = 1 s (non–repetitive), VCE = 100 V, See Figure 12

ÎÎÎÎ

S/b

1.5

—

ÎÎÎ

Adc

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2%. *Indicates JEDEC Registered Data.

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