ON Semiconductor 2N5883, 2N5884, 2N5885, 2N5886 Service Manual
2N5883, 2N5884 (PNP)
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2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon
High−Power Transistors
Complementary silicon high−power transistors are designed for
general−purpose power amplifier and switching applications.
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Features
• Low Collector−Emitter Saturation Voltage −
V
= 1.0 Vdc, (max) at IC = 15 Adc
CE(sat)
• Low Leakage Current
I
= 1.0 mAdc (max) at Rated Voltage
CEX
• Excellent DC Current Gain −
hFE = 20 (min) at IC = 10 Adc
• High Current Gain Bandwidth Product −
f
= 4.0 MHz (min) at I
t
= 1.0 Adc
C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
2N5883, 2N5885
ОООООООООО
2N5884, 2N5886
Collector−Base Voltage
ОООООООООО
2N5883, 2N5885
2N5884, 2N5886
Emitter−Base Voltage
Collector Current −
Continuous
ОООООООООО
Peak
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ОООООООООО
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data. Units and conditions differ on some
parameters and re−registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
Symbol
V
CEO
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V
CB
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V
EB
I
C
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I
B
P
D
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TJ, T
stg
Symbol
q
JC
Value
60
80
ÎÎÎ
60
ÎÎÎ
80
5.0
25
ÎÎÎ
50
7.5
200
1.15
ÎÎÎ
–65 to +200
Max
0.875
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
Unit
°C/W
25 AMPERE COMPLEMENTARY
SILICON POWER TRANSISTOR
60 − 80 VOLTS, 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
2N588xG
AYYWW
MEX
2N588x = Device Code
x = 3, 4, 5, or 6
G = Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1 Publication Order Number:
March, 2006 − Rev. 11
2N5883/D
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
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ELECTRICAL CHARACTERISTICS (Note 2) (T
= 25°C unless otherwise noted)
C
Characteristic
Collector−Emitter Sustaining Voltage (Note 3) 2N5883, 2N5885
(IC = 200 mAdc, IB = 0) 2N5884, 2N5886
ООООООООООООООООООООО
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) 2N5883, 2N5885
(VCE = 40 Vdc, IB = 0) 2N5984, 2N5886
ООООООООООООООООООООО
Collector Cutoff Current
(VCE = 60 Vdc, V
ООООООООООООООООООООО
(VCE = 80 Vdc, V
(VCE = 60 Vdc, V
ООООООООООООООООООООО
(VCE = 80 Vdc, V
Collector Cutoff Current
ООООООООООООООООООООО
(VCB = 60 Vdc, IE = 0) 2N5883, 2N5885
(VCB = 80 Vdc, IE = 0) 2N5884, 2N5886
ООООООООООООООООООООО
= 1.5 Vdc) 2N5883, 2N5885
BE(off)
= 1.5 Vdc) 2N5884, 2N5886
BE(off)
= 1.5 Vdc, TC = 150°C) 2N5883, 2N5885
BE(off)
= 1.5 Vdc, TC = 150°C) 2N5884, 2N5886
BE(off)
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ООООООООООООООООООООО
(IC = 10 Adc, VCE = 4.0 Vdc)
(IC = 25 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage (Note 3)
ООООООООООООООООООООО
(IC = 15 Adc, IB = 1.5 Adc)
(IC = 25 Adc, IB = 6.25 Adc)
ООООООООООООООООООООО
Base−Emitter Saturation Voltage (Note 3) (IC = 25 Adc, IB = 6.25 Adc)
Base−Emitter On Voltage (Note 3) (IC = 10 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 10 Vdc, f
= 1.0 MHz)
test
Output Capacitance 2N5883, 2N5884
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5885, 2N5886
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f
= 1.0 kHz)
test
SWITCHING CHARACTERISTICS
Rise Time
ООООООООООО
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ООООООООООО
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • f
test
.
Symbol
V
CEO(sus)
ÎÎ
I
CEO
ÎÎ
I
CEX
ÎÎ
ÎÎ
I
CBO
ÎÎ
ÎÎ
I
EBO
h
FE
ÎÎ
V
CE(sat)
ÎÎ
ÎÎ
V
BE(sat)
V
BE(on)
f
T
C
ob
h
fe
t
r
t
s
t
f
Min
60
80
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
−
35
ÎÎ
20
4.0
ÎÎ
−
−
ÎÎ
−
−
4.0
−
−
20
−
−
−
Max
−
−
Î
2.0
2.0
Î
1.0
Î
1.0
10
Î
10
Î
1.0
1.0
Î
1.0
−
Î
100
Î
1.0
4.0
Î
2.5
1.5
−
1000
500
−
0.7
1.0
0.8
Unit
Vdc
Î
mAdc
Î
mAdc
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mAdc
Î
mAdc
−
Î
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Vdc
Î
Vdc
Vdc
MHz
pF
−
ms
ms
ms
200
175
150
125
100
75
50
, POWER DISSIPATION (WATTS)
D
P
25
0
0 25 50 75 100 125 150 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
175
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