ON Semiconductor 2N5684, 2N5686 Service Manual
2N5684 (PNP), 2N5686 (NPN)
High-Current
Complementary Silicon
Power Transistors
These packages are designed for use in high-power amplifier and
switching circuit applications.
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Features
•High Current Capability - I
•DC Current Gain - h
FE
Continuous = 50 Amperes
C
= 15-60 @ IC = 25 Adc
•Low Collector-Emitter Saturation Voltage -
V
= 1.0 Vdc (Max) @ IC = 25 Adc
CE(sat)
•Pb-Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector Current - Continuous I
Base Current I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
CEO
P
TJ, T
CB
EB
C
B
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
300
250
200
150
q
JC
80 Vdc
80 Vdc
5.0 Vdc
50 Adc
15 Adc
300
1.715
-65 to +200 °C
0.584 °C/W
mW
mW/°C
50 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS, 300 WATTS
MARKING
DIAGRAM
2N568xG
AYYWW
MEX
TO-204 (TO-3)
CASE 197A
STYLE 1
2N568x = Device Code
G = Pb-Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
ORDERING INFORMATION
Device Package Shipping
2N5684G TO-3
2N5686 TO-3 100 Units/Tray
2N5686G TO-3
x = 4 or 6
100 Units/Tray
(Pb-Free)
100 Units/Tray
(Pb-Free)
100
, POWER DISSIPATION (WATTS)
50
D
P
0
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 12
1 Publication Order Number:
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2N5684/D
2N5684 (PNP), 2N5686 (NPN)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted) (Note 2)
C
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.2 Adc, IB = 0)
Collector Cutoff Current (VCE = 40 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 80 Vdc, V
(VCE = 80 Vdc, V
= 1.5 Vdc, TC = 150_C)
EB(off)
EB(off)
= 1.5 Vdc)
Collector Cutoff Current (VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 25 Adc, VCE = 2.0 Vdc)
(IC = 50 Adc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage (Note 3)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 10 Adc)
Base-Emitter Saturation Voltage (Note 2) (IC = 25 Adc, IB = 2.5 Adc)
Base-Emitter On Voltage (Note 2) (IC = 25 Adc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance 2N5684
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5686
Small-Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
Symbol
V
CEO(sus)
I
CEO
I
CEX
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
ob
h
fe
Min
80
-
-
-
-
-
15
5.0
-
-
-
-
2.0
-
-
15
Max
-
1.0
2.0
10
2.0
5.0
60
-
1.0
5.0
2.0
2.0
-
2000
1200
-
Unit
Vdc
mAdc
mAdc
mAdc
mAdc
-
Vdc
Vdc
Vdc
MHz
pF
+2.0 V
0
tr ≤
20ns
DUTY CYCLE ≈ 2.0%
0
-12V
DUTY CYCLE ≈ 2.0%
Figure 2. Switching Time Test Circuit
VCC-30 V
R
L
TO SCOPE
R
B
tr ≤ 20 ns
-12V
10 to 100 μs
VCC-30 V
R
+10V
L
TO SCOPE
R
B
tr ≤ 20ns
10 to 100 μs
VBB+4.0 V
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
tr ≤ 20 ns
t, TIME (s)μ
1.0
0.7
t
0.5
r
0.3
0.2
t
d
2N5684 (PNP)
2N5686 (NPN)
0.1
0.07
0.05
0.03
0.02
0.01
0.5
TJ = 25°C
IC/IB = 10
VCC = 30 V
0.7 1.0 2.0 3.0 5.0 7.0 10 50
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn-On Time
30
20
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