2N5655, 2N5657
Î
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Plastic NPN Silicon
High−Voltage Power
Transistor
These devices are designed for use in line−operated equipment such
as audio output amplifiers; low−current, high−voltage converters; and
AC line relays.
Features
• Excellent DC Current Gain −
hFE = 30−250 @ IC = 100 mAdc
• Current−Gain − Bandwidth Product −
fT = 10 MHz (Min) @ IC = 50 mAdc
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
ООООООООО
Peak
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
ООООООООО
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
Î
I
B
P
D
TJ, T
stg
Î
2N5655
250
275
2N5657
350
375
6.0
0.5
1.0
ÎÎÎÎ
1.0
20
0.16
–65 to +150
ÎÎÎÎ
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C/W
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0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250−350 VOLTS, 20 WATTS
TO−225AA
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
2
N565xG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
ООООООООО
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 9
Symbol
q
JC
Î
Max
6.25
ÎÎÎÎ
Unit
°C/W
1 Publication Order Number:
Y = Year
WW = Work Week
2N565x = Device Code
x = 5 or 7
G = Pb−Free Package
ORDERING INFORMATION
Device Package
2N5655 TO−225 500 Units / Bulk
2N5655G TO−225
(Pb−Free)
2N5657 TO−225 500 Units / Bulk
2N5657G TO−225
(Pb−Free)
Shipping
500 Units / Bulk
500 Units / Bulk
2N5655/D
2N5655, 2N5657
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ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted) (Note 2)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage 2N5655
(IC = 100 mAdc (inductive), L = 50 mH) 2N5657
ОООООООООООООООООООО
Collector−Emitter Breakdown Voltage 2N5655
= 1.0 mAdc, IB = 0) 2N5657
(I
C
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0) 2N5655
ОООООООООООООООООООО
(VCE = 250 Vdc, IB = 0) 2N5657
Collector Cutoff Current
ОООООООООООООООООООО
(VCE = 250 Vdc, V
(VCE = 350 Vdc, V
ОООООООООООООООООООО
(VCE = 150 Vdc, V
(VCE = 250 Vdc, V
ОООООООООООООООООООО
= 1.5 Vdc) 2N5655
EB(off)
= 1.5 Vdc) 2N5657
EB(off)
= 1.5 Vdc, TC = 100_C) 2N5655
EB(off)
= 1.5 Vdc, TC = 100_C) 2N5657
EB(off)
Collector Cutoff Current
(VCB = 275 Vdc, IE = 0) 2N5655
ОООООООООООООООООООО
(VCB = 375 Vdc, IE = 0) 2N5657
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 10 Vdc)
ОООООООООООООООООООО
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
ОООООООООООООООООООО
(IC = 500 mAdc, VCE = 10 Vdc)
Collector−Emitter Saturation Voltage (Note 3)
ОООООООООООООООООООО
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
ОООООООООООООООООООО
(IC = 500 mAdc, IB = 100 mAdc)
Base−Emitter Voltage (IC = 100 mAdc, VCE = 10 Vdc) (Note 3)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Small−Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
V
CEO(sus)
ÎÎÎ
V
(BR)CEO
I
CEO
ÎÎÎ
I
CEX
ÎÎÎ
ÎÎÎ
ÎÎÎ
I
CBO
ÎÎÎ
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE
f
T
C
ob
h
fe
Min
250
350
Î
250
350
−
Î
−
Î
−
−
Î
−
Î
−
−
Î
−
−
25
Î
30
Î
15
5.0
Î
−
−
Î
−
−
10
−
20
Max
−
−
ÎÎ
−
−
0.1
ÎÎ
0.1
ÎÎ
0.1
0.1
ÎÎ
1.0
ÎÎ
1.0
10
ÎÎ
10
10
−
ÎÎ
250
ÎÎ
−
−
ÎÎ
1.0
2.5
ÎÎ
10
1.0
−
25
−
Unit
Vdc
Î
Vdc
mAdc
Î
mAdc
Î
Î
Î
mAdc
Î
mAdc
−
Î
Î
Vdc
Î
Î
Vdc
MHz
pF
−
40
30
20
10
, POWER DISSIPATION (WATTS)
D
P
0
25 50 75 100 150
125
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
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2
50 mH
X
200
Hg RELAY
+
6.0 V
TO SCOPE
50 V
Y
300
1.0
Figure 2. Sustaining Voltage Test Circuit
+
−
2N5655, 2N5657
1.0
0.5
TJ = 150°C
0.2
0.1
0.05
Curves apply below rated V
, COLLECTOR CURRENT (AMP)
C
I
0.02
0.01
20
30 40 60 100 200 300 400 600
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Second Breakdown Limit
Thermal Limit @ T
Bonding Wire Limit
C
CEO
= 25°C
1.0 ms
d-
c
2N5655
2N5657
Figure 3. Active−Region Safe Operating Area
300
200
TJ = +150°C
+100°C
+25°C
−55 °C
, DC CURRENT GAIN
FE
h
100
70
50
30
20
10 ms
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T
= 150_C; TC is
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
VCE = 10 V
VCE = 2.0 V
10
1.0
2.0 3.0 5.0 7.0 30 50 70 100 200 300 50010 20
IC, COLLECTOR CURRENT (mA)
Figure 4. Current Gain
1.0
V, VOLTAGE (VOLTS)
0.8
0.6
0.4
0.2
V
@ IC/IB = 10
CE(sat)
0
10
20 50 100 200 300 500
V
@ IC/IB = 10
BE(sat)
VBE @ VCE = 10 V
IC/IB = 5.0
30
IC, COLLECTOR CURRENT (mA)
TJ = + 25°C
Figure 5. “On” Voltages
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3
C, CAPACITANCE (pF)
300
200
100
2N5655, 2N5657
TJ = + 25°C
C
ib
70
50
30
20
10
0.1
2.0 5.0 10 20 50 1000.2 0.5 1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
C
ob
t, TIME (s)μ
t, TIME (s)μ
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
5.0
2.0
1.0
0.5
10
t
r
IC/IB = 10
VCC = 300 V, V
BE(off)
= 2.0 V
(2N5657, only)
VCC = 100 V, V
t
d
1.0
2.0 5.0 10 20 50 100 500
BE(off)
= 0 V
200
IC, COLLECTOR CURRENT (mA)
Figure 7. Turn−On Time
10
IC/IB = 10
t
s
t
f
VCC = 100 V
0.2
VCC = 300 V
(Type 2N5657, only)
0.1
1.0
2.0 5.0 10 20 50 100 500200
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn−Off Time
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4
2N5655, 2N5657
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
Q
132
H
F
−A−
K
M
V
G
0.25 (0.010) B
S
D
2 PL
M
0.25 (0.010) B
A
C
J
R
M
M
A
M
M
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
__
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERSINCHES
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N5655/D
5
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