ON Semiconductor 2N5550, 2N5551 Service Manual
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter V oltage
2N5550
2N5551
Collector − Base Voltage
2N5550
2N5551
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
CEO
V
CBO
EBO
P
P
TJ, T
C
D
D
stg
140
160
160
180
6.0 Vdc
600 mAdc
625
5.0
1.5
12
−55 to +150 °C
Vdc
Vdc
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 1
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COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
Thermal Resistance, Junction−to−Case R
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
q
JA
q
JC
200 °C/W
83.3 °C/W
MARKING DIAGRAM
2N
555x
AYWWG
G
x = 0 or 1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1 Publication Order Number:
2N5550/D
2N5550, 2N5551
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0) 2N5550
Collector−Base Breakdown Voltage
= 100 mAdc, IE = 0 ) 2N5550
(I
C
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0) 2N5550
(VCB = 120 Vdc, IE = 0) 2N5551
(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5550
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5551
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550
(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 2N5550
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5551
2N5551
2N5551
2N5551
2N5551
2N5551
2N5551
2N5551
2N5551
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
f
C
obo
C
h
NF
FE
ibo
140
160
160
180
−
Vdc
−
−
Vdc
−
6.0 − Vdc
−
−
−
−
100
50
100
50
nAdc
mAdc
− 50 nAdc
60
80
60
80
20
30
−
−
−
−
−
−
T
100 300 MHz
−
−
250
250
−
−
0.15
0.25
0.20
1.0
1.2
1.0
−
Vdc
Vdc
− 6.0 pF
pF
−
−
fe
50 200 −
30
20
dB
−
−
10
8.0
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