OMNIREL OM6N100SA, OM3N100ST, OM1N100ST, OM5N100SA, OM3N100SA Datasheet

OM1N100SA

DRAIN

GATE

SOURCE

OM3N100SA

OM5N100SA
OM6N100SA

POWER MOSFET IN HERMETIC ISOLATED
JEDEC PACKAGE

1000V, Up To 6 Amp, N-Channel
MOSFET In Hermetic Metal Package

FEATURES

• Isolated Hermetic Metal Package

• Fast Switching

• Low R

• Available Screened To MIL-19500, TX, TXV And S

• Ceramic Feedthroughs Also Available

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.

DS(on)

OM1N100ST
OM3N100ST

MAXIMUM RATINGS

PART NUMBER R

OM1N100SA 8.0 1.0A
OM3N100SA 5.2 3.5A
OM5N100SA 3.0 5.0A
OM6N100SA 2.0 6.0A
OM3N100ST 5.4 3.5A
OM1N100ST 8.2 1.0A

SCHEMATIC

DS(on)

PIN CONNECTION

TO-254AA

123

I

D

Pin 1: Drain
Pin 2: Source
Pin 3: Gate

3.1

TO-257AA

123

4 11 R1
Supersedes 2 05 R0

3.1 - 15

3.1

G

D

S

G

D

S

OM1N100SA/ST Series

ELECTRICAL CHARACTERISTICS: T

= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

C

STATIC P/N OM1N100SA (See Note 3) STATIC P/N OM3N100SA (See Note 3)

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BV

Drain-Source Breakdown 1000 V VGS= 0, BV

DSS

Voltage I

V

Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV

GS(th)

I

Gate-Body Leakage Forward 100 nA VGS= 20 V, VDS= 0 I

GSSF

I

Gate-Body Leakage Reverse -100 nA VGS= - 20 V, VDS= 0 I

GSSR

I

Zero Gate Voltage 0.25 mA VDS= Max. Rat., VGS= 0 I

DSS

Drain Current 1.0 mA V

I

On-State Drain Current 1.0 A VDS> I

D(on)

R

Static Drain-Source On-State SA 8.0 VGS= 10 V R

DS(on)

Resisitance

R

Static Drain-Source On-State SA 15.0 VGS= 10 V R

DS(on)

Resistance

3.1 - 16

DYNAMIC DYNAMIC

g

Forward Transductance 1.0 S VDS= 10V, ID= 1 A gfsForward Transductance 1.0 S VDS= 10, ID= 1.5 A

fs

C

Input Capacitance 950 pF VGS= 0 C

iss

C

Output Capacitance 110 pF VDS= 25 V C

oss

C

Reverse Transfer Capacitance 40 pF f = 1 MHz C

rss

T

Turn-On Delay Time 90 ns T

d(on)

t

Rise Time 90 ns t

r

T

Turn-Off Delay Time 115 ns T

d(off)

t

Fall Time 75 ns t

f

1, 3

1, 3

ST 8.2 ID=.5A Resistance

ST 15.4 ID=.5A, TC= 100° C Resistance

= 250 mA Voltage ID= 250 mA

D

= 0.8 x Max. Rat., Current 1.0 mA VDS= 0.8 x Max. Rat.,

DS

V

= 0, TC= 125° C VGS= 0, TC= 125° C

GS

x R

D(on)

V

= 10 V VGS= 10 V

GS

Max. I

DS(on)

VDD= 600 V, ID= 3.5
RG= 50W, VGS= 10 V

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

Continuous Source Current 3.5 A Modified MOSPOWER I

S

(Body Diode) symbol showing (Body Diode) symbol showing

I

Source Current

SM

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t

Reverse Recovery Time 900 ns IF= IS, VDD= 100 V t

rr

1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area. 2 Pulse Width limited by safe operating area.
3 OM1N100ST - All characteristics the same except R

1

2

14 A the integral P-N I

2.5 V TC= 25 C, IS= 3.5 A, VGS= 0 VSDDiode Forward Voltage

dl

/ds = 100 A/ms, TJ= 150 C dlF/ds = 100 A/ms, TJ= 150 C

F

DS(on)

Drain-Source Breakdown 1000 V VGS= 0,

DSS

Gate-Threshold Voltage 2.0 4.0 V VDS= V

GS(th)

Gate-Body Leakage Forward 100 nA VGS= 20 V

GSSF

Gate-Body Leakage Reverse - 100 nA VGS= - 20 V

GSSR

Zero Gate Voltage Drain 0.25 mA VDS= Max. Rat., VGS= 0

DSS

On-State Drain Current 3.5 A VDS> I

D(on)

Static Drain-Source On-State SA 5.2 VGS= 10 V

DS(on)

Static Drain-Source On-State SA 10.0 VGS= 10 V

DS(on)

Input Capacitance 950 pF VGS= 0

iss

Output Capacitance 110 pF VDS= 25 V

oss

Reverse Transfer Capacitance 40 pF f = 1 MHz

rss

Turn-On Delay Time 90 ns

d(on)

Rise Time 90 ns

r

Turn-Off Delay Time 115 ns

d(off)

Fall Time 75 ns

f

Continuous Source Current 3.5 A Modified MOSPOWER

S

Source Current

SM

Reverse Recovery Time 900 ns IF= IS, VDD= 100 V

rr

3 OM3N100ST - All characteristics the same except R

1, 3

1, 3

ST 5.4 ID=.5A

ST 10.4 ID=.5A, TC= 100° C

1

2

14 A the integral P-N

2.5 V TC= 25 C, IS= 3.5 A, VGS= 0

DS(on)

GS

D(on)

VDD= 600 V, I
RG= 50W, V

, I

= 250 mA

D

x R

D

GS

DS(on)

= 3.5

= 10 V

Max

ELECTRICAL CHARACTERISTICS: T

G

D

S

G

D

S

= 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: TC= 25° unless otherwise noted

C

STATIC P/N OM5N100SA (See Note 3) STATIC P/N OM6N100SA (See Note 3)

Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions

BV

Drain-Source Breakdown 1000 V VGS= 0, BV

DSS

Voltage I

V

Gate-Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250 mAV

GS(th)

I

Gate-Body Leakage Forward 100 nA VGS= 20 V, VDS= 0 I

GSSF

I

Gate-Body Leakage Reverse -100 nA VGS= - 20 V, VDS= 0 I

GSSR

I

Zero Gate Voltage 0.25 mA VDS= Max. Rat., VGS= 0 I

DSS

Drain Current 1.0 mA V

I

On-State Drain Current 5.0 A VDS> I

D(on)

R

Static Drain-Source On-State 3.0 VGS= 10 V, ID= 2.5 A R

DS(on)

Resisitance

R

Static Drain-Source On-State 6.0 VGS= 10 V, ID= 2.5 A R

DS(on)

Resistance

3.1 - 17

DYNAMIC DYNAMIC

g

Forward Transductance 4.0 S VDS= 25 V

fs

C

Input Capacitance 2600 pF VGS= 0 C

iss

C

Output Capacitance 350 pF VDS= 25 V C

oss

C

Reverse Transfer Capacitance 150 pF f = 1 MHz C

rss

T

Turn-On Delay Time 65 ns T

d(on)

t

Rise Time 55 ns t

r

T

Off-Voltage Rise Time 62 ns Tr(V

r(Voff)

t

Fall Time 25 ns t

f

1

1

= 250 mA Voltage ID= 250 mA

D

= 0.8 x Max. Rat., Current 1.0 mA VDS= 0.8 x Max. Rat.,

DS

V

= 0, TC= 125° C VGS= 0, TC= 125° C

GS

x R

D(on)

V

= 10 V VGS= 10 V

GS

Max., I

DS(on)

TC= 100 C Resistance

, ID= 2.5 A g

DS(on)

= 800 V, I

GS

D

=6A
= 10 V

V

DD

RG= 7W, V

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

Continuous Source Current 6 A Modified MOSPOWER I

S

(Body Diode) symbol showing (Body Diode) symbol showing

I

Source Current

SM

(Body Diode) Junction rectifier. (Body Diode) Junction rectifier.
VSDDiode Forward Voltage
t

Reverse Recovery Time 1100 ns IF= IS,VDD= 100 V t

rr

1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%.
2 Pulse Width limited by safe operating area. 2 Pulse Width limited by safe operating area.

3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package 3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package

2

1

24 A the integral P-N I

2.5 V TC= 25 C, IS= 6 A, VGS= 0 VSDDiode Forward Voltage

dl

/ds = 100 A/ms dlF/ds = 100 A/ms, TJ= 150 C

F

Drain-Source Breakdown 1000 V VGS= 0,

DSS

Gate-Threshold Voltage 2.0 4.0 V VDS= V

GS(th)

Gate-Body Leakage Forward 100 nA VGS= 20 V, VDS= 0

GSSF

Gate-Body Leakage Reverse - 100 nA VGS= - 20 V, VDS= 0

GSSR

Zero Gate Voltage Drain 0.25 mA VDS= Max. Rat., VGS= 0

DSS

On-State Drain Current 6.0 A VDS> I

D(on)

Static Drain-Source On-State 2.0 VGS= 10 V, ID= 3.0 A

DS(on)

Resistance
Static Drain-Source On-State 4.0 VGS= 10 V, ID= 3.0 A

DS(on)

Forward Transductance 4.0 S VDS= 25V, ID= 3.0 A

fs

Input Capacitance 2600 pF VGS= 0

iss

Output Capacitance 350 pF VDS= 25 V

oss

Reverse Transfer Capacitance 150 pF f = 1 MHz

rss

Turn-On Delay Time 65 ns

d(on)

Rise Time 55 ns

r

) Off-Voltage Rise Time 62 ns

off

Fall Time 25 ns

f

Continuous Source Current 6 A Modified MOSPOWER

S

Source Current

SM

Reverse Recovery Time 1000 ns IF= IS,VDD= 100 V

rr

1

1

2

1

24 A the integral P-N

2.5 V TC= 25 C, IS= 6 A, VGS= 0

, I

GS

D(on)

TC= 100° C

VDD= 800 V, I
RG= 7W, V

= 250 mA

D

x R

= 6A

D

= 10 V

GS

DS(on)

Max.,

OM1N100SA/ST Series

3.1

205 Crawford Street, Leominster, MA 01453 USA [phone] FAX [phone]

.430

.410

.200
.190

.038 MAX.

.005

.120 TYP.

.537
.527

.665
.645

.420
.410

.150
.140

.750
.500

.100 TYP.

.035
.025

.045
.035

.144 DIA.

.050
.040

.260
.249

.685
.665

.800
.790

.545
.535

.550
.510

.045
.035

.550
.530

.150 TYP.

.150 TYP.

.005

DSG
FET 1

DSG

FET 3

DSG

FET 3

DSG

FET 4

DSG

FET 2

GSD

FET 1

OM1N100SA/ST Series

ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)

Symbol Parameter OM1N100SA OM3N100SA OM5N100SA OM6N100SA Units

I

AR

E

AS

E

AR

V

DS

V

DGR

ID@ TC= 25°C Continuous Drain Current .50 3.5 5.0 6.0 A
ID@ TC= 100°C Continuous Drain Current .30 2.0 3.1 3.7 A
I

DM

V

GS

PD@ TC= 25°C Maximum Power Dissipation 90 90 130 130 W
PD@ TC=100°C Maximum Power Dissipation 32 32 51 51 W
Junction-To-Case Linear Derating Factor .87 .87 2.10 2.10 W/°C
Junction-To-Ambient Linear Derating Factor .020 .020 .020 .020 W/°C
T

J

T

stg

Lead Temperature (1/16" from case for 10secs.) 300 300 300 300 °C

1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.

OM1N100ST OM3N100ST

Avalanche Current
(Repetitive or Non-Repetitive)
Tj= 25°C 3.5 3.5 6 6 A
Tj= 100°C 2 2 3.4 3.4 A
Single Pulse Avalanche Energy 130 130 850 850 mJ
Starting Tj= 25°C, ID= IAR,
VDD= 25V
Repetitive Avalanche Energy 6 6 16 16 mJ
(Pulse width limited by TJmax, d < 1%)
Drain-Source Voltage 1000 1000 1000 1000 V
Drain-Source Voltage (RGS= 20k ) 1000 1000 1000 1000 V

Pulsed Drain Current

1

14 14 24 24 A

Gate-Source Voltage ±20 ±20 ±20 ±20 V

Operating and
Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C

3.1

THERMAL RESISTANCE

R

thJC

Junction-To-Case Max. 1.15 1.15 .48 .48 °C/W

MECHANICAL OUTLINE

TO-257AA TO-254AA

PACKAGE OPTIONS

Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA

Z-TAB

MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.

6 PIN SIP

MOD PAK