NSC 5962-8762901SA, 5962-8762901RA, 5962-87629012A Datasheet
54FCT245
Octal Bidirectional Transceiver with TRI-STATE
®
Outputs
General Description
The ’FCT245 contains eight non-inverting bidirectional buffers withTRI-STATE outputs and is intended for bus-oriented
applications. Current sinking capability is 48 mA on both the
A and B ports. The Transmit/Receive (T/R) input determines
the direction of data flow through the bidirectional transceiver.Transmit(active HIGH) enables datafromAports to B
ports; Receive (active LOW) enables data from B ports to A
ports. The Output Enable input, when HIGH, disables both A
and B ports by placing them in a High Z condition.
Features
n TTL input and output level compatible
n A and B output sink capability of 48 mA, source
capability of 12 mA
n CMOS power consumption
n Standard Microcircuit Drawing (SMD) 5962-8762901
Ordering Code:
Military Package Package Description
Number
54FCT245DMQB J20A 20-Lead Ceramic Dual-In-Line
54FCT245FMQB W20A 20-Lead Cerpak
54FCT245LMQB E20A 20-Lead Ceramic Leadless Chip Carrier, Type C
Logic Symbol
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
DS100950-1
August 1998
54FCT245 Octal Bidirectional Transceiver with TRI-STATE Outputs
© 1998 National Semiconductor Corporation DS100950 www.national.com
Connection Diagrams
Pin Descriptions
Pin Names Description
OE
Output Enable Input (Active LOW)
T/R
Transmit/Receive Input
A
0–A7
Side A Inputs or TRI-STATE Outputs
B
0–B7
Side B Inputs or TRI-STATE Outputs
Truth Table
Inputs Output
OE
T/R
L L Bus B Data to Bus A
L H Bus A Data to Bus B
H X High Z State
H=HIGH Voltage Level
L=LOW Voltage Level
X=Immaterial
Logic Diagram
Pin Assignment for DIP
and Flatpak.
DS100950-5
Pin Assignment for LCC
DS100950-3
DS100950-4
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature −65˚C to +150˚C
Ambient Temperature under Bias −55˚C to +125˚C
Junction Temperature under Bias
Ceramic −55˚C to +175˚C
V
CC
Pin Potential to
Ground Pin −0.5V to +7.0V
Input Voltage (Note 2) −0.5V to +7.0V
Input Current (Note 2) −30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-off State −0.5V to 5.5V
in the HIGH State −0.5V to V
CC
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
Recommended Operating
Conditions
Free Air Ambient Temperature
Military −55˚C to +125˚C
Supply Voltage
Military +4.5V to +5.5V
Note 1: Absolutemaximumratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Symbol Parameter FCT245
Units V
CC
Conditions
Min Max
V
IH
Input HIGH Voltage 2.0 V Recognized HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized LOW Signal
V
CD
Input Clamp Diode Voltage −1.2 V Min I
IN
=
−18 mA (OE, T/R)
V
OH
Output HIGH
Voltage
54FCT 4.3 V Min I
OH
=
−300 uA (A
n,Bn
)
54FCT 2.4 V Min I
OH
=
−12 mA (A
n,Bn
)
V
OL
Output LOW
Voltage
54FCT 0.2 V Min I
OL
=
300 uA (A
n,Bn
)
54FCT 0.55 V Min I
OL
=
48 mA (A
n,Bn
)
I
IH
Input HIGH Current 5
µA Max
V
IN
=
2.7V (OE, T/R)
5V
IN
=
V
CC
(OE, T/R)
I
BVIT
Input HIGH Current Breakdown Test
(I/O)
20 µA Max
V
IN
=
5.5V (A
n,Bn
)
I
IL
Input LOW Current −5 µA Max V
IN
=
0.0V (OE, T/R)
I
OS
Output Short-Circuit Current −60 mA Max V
OUT
=
0.0V (A
n,Bn
)
I
CCQ
Power Supply Current
1.5 mA Max
VIN= 0.2V or VIN= 5.3V, VCC=
5.5V
∆I
CC
Power Supply Current 2.0 mA Max VCC= 5.5V, VIN= 3.4V
I
CCT
Total Power Supply Current
6.0 mA
V
IN
=
3.4V or V
IN
= GND, OE =
T/R = GND, VCC= 5.5V, fI=
10Mhz, outputs open, one bit
toggling - 50%duty cycle
5.5 mA Max
V
IN
=
5.3V or V
IN
= 0.2V,OE =
T/R = GND, VCC= 5.5V, fI=
10Mhz, outputs open, one bit
toggling - 50%duty cycle
I
CCD
Dynamic I
CC
(Note 3) 0.4
mA/
MHz
Max
Outputs Open, OE=GND, T/R
=
GND or VCCOne Bit Toggling,
50%Duty Cycle
Note 3: Guaranteed but not tested.
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