PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µµµµ
PG2106TB,
µ
µ
PG2110TB
µµ
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were
developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with
3.0 V, having the high gain and low distortion. The µPG2106TB is for 800 MHz band application, and the
PG2110TB is for 1.5 GHz band application.
µ
FEATURES
DD1
• Low operation voltage : V
RF
•f
• Low distortion : P
• Low operation current : IDD = 25 mA TYP. @VDD = 3.0 V, P
• Variable gain control function :∆G = 40 dB TYP. @V
• 6-pin super minimold package
: 889 to 960 MHz, 1429 to 1453 MHz@P
External input and output matching
External input and output matching
External input and output matching
DD2
= V
= 3.0 V
adj1
= −60 dBc TYP. @VDD = 3.0 V, P
AGC
= 0.5 to 2.5 V
out
= +8 dBm
out
= +8 dBm, V
out
= +8 dBm, V
AGC
AGC
= 2.5 V
= 2.5 V
APPLICATION
• Digital Cellular : PDC, IS-136 etc.
ORDERING INFORMATION (PLAN)
Part Number Package Supplying Form
µ
PG2106TB-E3
µ
PG2110TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
ABSOLUTE MAXIMUM RATINGS (TA = +25
Supply Voltage V
AGC Control Voltage V
Input Power P
Total Power Dissipat i on P
Operating Ambient Temperature T
Storage Temperature T
Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, T
Note
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
6-pin super minimold Carrier tape width is 8 mm.
Qty 3 kp/reel.
PG2106TB, µPG2110TB)
µ
C)
°°°°
Parameter Symbol Ratings Unit
DD1
DD2
, V
AGC
in
tot
A
stg
6.0 V
6.0 V
−
8dBm
Note
140
−
30 to +90
−
35 to +150
A
= +85 °C
mW
°
C
°
C
Document No. P14318EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
©
1999
[µPG2106TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
µµµµ
PG2106TB,
µµµµ
PG2110TB
Pin No. Connection Pin No. Connection
1V
DD1
4V
AGC
2 GND 5 GND
3V
DD2
& OUT 6 IN
123
G1V
654
Top View Bottom View Top View
3
2
1
4
5
6
4
5
6
RECOMMENDED OPERATING CONDITIONS (TA = +25
Parameter Symbol MIN. TYP. MAX. Unit
DD1
Supply Voltage V
Input Power P
AGC Control Voltage V
, V
AGC
DD2
in
+2.7 +3.0 +3.3 V
3
2
1
°°°°
C)
3
2
1
4
5
6
−−18−
0
−
10 dBm
2.5 V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25
C, V
°°°°
DD1
= V
DD2
= +3.0 V,
/4DQPSK modulated signal input, External
ππππ
input and output matching)
Parameter Symbol Test Conditi ons MIN. TYP. MAX. Unit
Operating Frequency f 889
Power Gain G
Total Current I
Adjacent Channel
P
Power Leakage 1
Adjacent Channel
P
Power Leakage 2
Variable Gain Range
AGC Control Current I
p
Pin = −18 dBm, V
DD
adj1
adj2
GP
∆
AGC
out
P
out
P
f = ±50 kHz, 21 kHz Band Width
∆
out
P
f = ±100 kHz, 21 kHz Band Width
∆
in
= −18 dBm, V
AGC
V
= +8 dBm, V
= +8 dBm, V
= +8 dBm, V
= 0.5 to 2.5 V
AGC
= 2.5 V 26 30
AGC
= 2.5 V
AGC
= 2.5 V
AGC
= 2.5 V
AGC
= 0.5 to 2.5 V 35 40
−
−−60−
−−70−
−
−
25 35 mA
200 500
960 MHz
−
55
dB
dBc
65
−
dB
µ
A
2
Preliminary Data Sheet P14318EJ1V0DS00
[µPG2110TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No. Connection Pin No. Connection
µµµµ
PG2106TB,
123
µµµµ
PG2110TB
1V
DD1
4V
AGC
G1Y
2 GND 5 GND
3V
DD2
& OUT 6 IN
654
Top View Bottom View Top View
3
2
1
4
5
6
4
5
6
RECOMMENDED OPERATING CONDITIONS (TA = +25
Parameter Symbol MIN. TYP. MAX. Unit
DD1
Supply Voltage V
Input Power P
AGC Control Voltage V
, V
in
AGC
DD2
+2.7 +3.0 +3.3 V
3
2
1
°°°°
C)
3
2
1
4
5
6
−−18−
0
−
10 dBm
2.5 V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25
C, V
°°°°
DD1
= V
DD2
= +3.0 V,
/4DQPSK modulated signal input, External
ππππ
input and output matching)
Parameter Symbol Test Conditi ons MIN. TYP. MAX. Unit
Operating Frequency f 1429
Power Gain G
Total Current I
Adjacent Channel
P
Power Leakage 1
Adjacent Channel
P
Power Leakage 2
Variable Gain Range
AGC Control Current I
p
Pin = −18 dBm, V
DD
adj1
adj2
GP
∆
AGC
out
P
out
P
f = ±50 kHz, 21 kHz Band Width
∆
out
P
f = ±100 kHz, 21 kHz Band Width
∆
in
= −18 dBm, V
AGC
V
= +8 dBm, V
= +8 dBm, V
= +8 dBm, V
= 0.5 to 2.5 V
Preliminary Data Sheet P14318EJ1V0DS00
AGC
= 2.5 V 24 27
AGC
= 2.5 V
AGC
= 2.5 V
AGC
= 2.5 V
AGC
= 0.5 to 2.5 V 35 40
−
−−60−
−−70−
−
−
25 35 mA
200 500
1453 MHz
−
55
65
−
dB
dBc
dB
µ
A
3
[µPG2106TB]
EVALUATION CIRCUIT (Preliminary)
DD1
DD2
= V
V
= +3.0 V, f = 925 MHz
DD1 VDD2
V
µµµµ
PG2106TB,
µµµµ
PG2110TB
C1
L4
IN
Using the NEC Evaluation Board (Preliminary)
Symbol Value
C5
L3
L1
123
G1V
654
L2
C4
C3
OUT
C2
R1
VAGC
C1, C3 1 000 pF
C2 100 pF
C4 27 pF
C5 2 pF
L1 10 nH
L2 39 nH
L3 27 nH
L4 33 nH
R1 1 k
4
Ω
Preliminary Data Sheet P14318EJ1V0DS00
[µPG2106TB]
EVALUATION BOARD
Epoxy glass:
= 4.6, t = 0.4 mm, Board Dimension: 38
εεεε
Vdd1
µµµµ
PG2106TB,
40 mm
××××
V
DD1
C2
µµµµ
PG2110TB
OUT
C1
C5
L4
IN
LO IN
L1
L3
L2
C3
VDD2
Vdd2
C4
VAGC
R1
RF IN RF OUT
Preliminary Data Sheet P14318EJ1V0DS00
5
[µPG2110TB]
EVALUATION CIRCUIT (Preliminary)
DD1
DD2
= V
V
= +3.0 V, f = 1441 MHz
µµµµ
PG2106TB,
µµµµ
PG2110TB
IN
C1 C6
L3
L2
C5
DD1
V
123
V
DD2
G1Y
654
L1
C4
C2
R1
C3
V
OUT
AGC
Using the NEC Evaluation Board (Preliminary)
Symbol Value
C1, C3, C5 1 000 pF
C2 1.5 pF
C4 3 pF
C6 2 pF
L1 2.7 nH
L2, L3 8.2 nH
R1 1 k
Ω
6
Preliminary Data Sheet P14318EJ1V0DS00
[µPG2110TB]
EVALUATION BOARD
Polyimide:
= 4.6, t = 0.4 mm, Board Dimension: 38
εεεε
µµµµ
PG2106TB,
40 mm
××××
V
DD1
Vdd1 Vdd2
21-091667_1
V
DD2
µµµµ
PG2110TB
OUT
IN
IN
L2
L3
C6
C1
C5
AGC AMP
NEC
C3
C4
L1
C2
R1
Vagc
OUT
V
AGC
Preliminary Data Sheet P14318EJ1V0DS00
7
TYPICAL CHARACTERISTICS
[µPG2106TB]
OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER
45
f = 925 MHz, V
V
AGC
40
π/4DQPSK signal input
(mA)
DD
35
30
25
= 2.5 V
DD1
= V
DD2
= 3.0 V
µµµµ
PG2106TB,
µµµµ
PG2110TB
30
20
I
DD
10
0
−10
f = ±50 kHz (dBc)
@∆
adj1
20
P
(dBm), Total Current I
15
out
out
10
5
0
Output Power P
−5
−35 −30 −25 −20 −15 −10 −5
P
adj1
Input Power Pin (dBm)
GAIN vs. AGC CONTROL VOLTAGE
40
f = 925 MHz, V
DD1
= V
DD2
= 3.0 V
Vector Network Analyzer use
30
20
10
0
Gain (dB)
−20
−30
−40
−50
−60
−70
Adjacent Channel Power Leakage1 P
−10
−20
−30
0 0.5 1 1.5 2 2.5 3
AGC
AGC Control Voltage V
8
Preliminary Data Sheet P14318EJ1V0DS00
(V)
[µPG2110TB]
OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER
30
µµµµ
PG2106TB,
µµµµ
PG2110TB
0
25
(mA)
DD
I
DD
20
15
P
out
10
(dBm), Total Current I
out
P
adj1
5
0
Output Power P
−5
−35 −25 −20−30 −15 −10 −50
f = 1441 MHz, V
AGC
= 2.5 V
V
π/4DQPSK signal input
DD1
= V
DD2
= 3.0 V,
−10
−20
−30
−40
−50
−60
−70
Input Power Pin (dBm)
GAIN vs. AGC CONTROL VOLTAGE
40
f = 1441 MHz, V
DD1
= V
DD2
= 3.0 V
Vector Network Analyzer use
30
f = ±50 kHz (dBc)
@∆
adj1
Adjacent Channel Power Leakage1 P
20
10
0
Gain (dB)
−10
−20
−30
0 0.5 1 1.5 2 2.5 3
AGC Control Voltage V
AGC
(V)
Preliminary Data Sheet P14318EJ1V0DS00
9
PACKAGE DIMENSIONS
6 pin super minimold (Unit: mm)
0.2
+0.1
−0
0.1 MIN.
µµµµ
PG2106TB,
+0.1
0.15
−0
µµµµ
PG2110TB
2.1±0.1
1.25±0.1
0.65 0.65
1.3
2.0±0.2
0 to 0.1
0.7
0.9±0.1
10
Preliminary Data Sheet P14318EJ1V0DS00
µµµµ
PG2106TB,
µµµµ
PG2110TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Conditions Recomm ended Condi t i on Symbol
Infrared Reflow Package peak tem perat ure: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limi t: None
VPS Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Count: 3, Exposure limi t: None
Wave Soldering Soldering bath tem perat ure: 260 °C or below
Time: 10 seconds or less
Count: 1, Exposure limi t: None
Partial Heating Pi n t em perature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: None
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Note
Note
Note
Note
Note
IR35-00-3
VP15-00-3
WS60-00-1
–
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Preliminary Data Sheet P14318EJ1V0DS00
11
µµµµ
PG2106TB,
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
µµµµ
PG2110TB
M7 98. 8
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