NEC UPG181GR-E1, UPG181GR Datasheet

DATA SHEET
GaAs INTEGRATED CIRCUIT
µµµµ
PG181GR
DESCRIPTION
The µPG181GR is intended for use in Direct Broadcast Satellite (DBS) applications within the Low Noise Block
(LNB) down-converter for systems where at least two LNB outputs are required.
It offers two intermediate frequency amplifier channels that can independently select 1 of 2 IF inputs. It is loused in a very small 16-pin plastic HTSSOP package available on tape-and-reel and easy to install and contributes to miniaturizing the systems.
FEATURES
• Two Independent IF Channels
• Integral Switching to Channel Input to Either Channel Output
• Insertion Loss Per Channel : 5.0 dB TYP. (ZO = 50 Ω)
• Frequency Range : 950 MHz to 2 150 MHz
• Channel to Channel Isolation : 33 dB TYP.
• Small 16-pin HTSSOP Package
ORDERING INFORMATION (PLAN)
Part Number Package Supplying Form
µ
PG181GR-E1 16-pin Plastic HTSSOP Carrier tape width 12 mm.
Qty 3 kp/reel.
Remark
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
GaAs MES-FET.
PG181GR)
µ
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P14268EJ2V0DS00 (2nd edition) Date Published November 1999 N CP(K) Printed in Japan
The mark shows major revised points.
1999©
µµµµ
PG181GR
ABSOLUTE MAXIMUM RATINGS (TA = +25
C)
°°°°
Parameter Symbol Ratings Unit
Note 1
6 to +6
Control Voltage 1, 2, 3, 4 V
CONT1, 2, 3, 4
Total Power Dissipat i on P Operating Ambient Temperature T Storage Temperature T
Notes 1.
CONT(H)
| V Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TC = +85 °C
2.
− V
CONT(L)
| ≤ 6.0 V
tot
A
stg
Note2
2
40 to +85
65 to +150
PIN CONNECTION AND INTERNAL BLOCK DIAGRAM (TOP VIEW)
Pin No. Connection P i n No. Connecti on Pin No. Connection P i n No. Connecti on
1IN25V 2 GND 6 GND 10 GND 14 GND 3 GND 7 GND 11 GND 15 GND 4V
CONT3
8OUT212V
CONT4
9OUT113V
CONT2
16 IN1
V
W
° °
CONT1
C C
16 15 14 13 12 11 10 9
12345678
2
Data Sheet P14268EJ2V0DS00
µµµµ
PG181GR
RECOMMENDED OPERATING CONDITIONS (TA = +25
C)
°°°°
Parameter Symbol MIN. TYP. MAX. Unit Control Voltage (High) V Control Voltage (Low) V
ELECTRICAL CHARACTERISTICS (TA = +25
O
0/ +5 V, Z
= 50
, LL, LR, RL, RR Each Port)
ΩΩΩΩ
CONT(H)
CONT(L)
+4.5 +5 +5.5 V
0.5 0 +0.5 V
C, unless otherwise specified: V
°°°°
CONT1
Parameter Sym bol Test Conditions MIN. TYP. MAX. Unit Insertion Loss L Insertion Loss Flatness Insertion Loss Flatness
INS
INS
L
INS
L
f = 0.95 GHz to 2.15 GHz
INS
| L
(0.95 GHz) − L
INS
| L
(0.95 GHz) − L
INS
(1.7 GHz) |
INS
(2.15 GHz) |
5.0 7.0 dB
0.5 1.2 dB
0.8 1.5 dB Channel Isolation ISL f = 0.95 GHz to 1.7 GHz 30 33 Channel Isolation ISL f = 1.7 GHz to 2.15 GHz 25 30
CONT
out
f = 0.95 GHz to 2.15 GHz 13 16
CONT
V
= +5 V/0 V, RF OFF
−−
Output Return Loss RL Control Current I
to V
200
CONT4
=
dB dB dB
µ
A
Data Sheet P14268EJ2V0DS00
3
EVALUATION CIRCUIT
µµµµ
PG181GR
CONT1
V
to V
IN1
(L)
IN2
(R)
CONT4
= 0/ +5 V, ZO = 50
Z
Z
, DC Blocking Capacitor = 51 pF
ΩΩΩΩ
V
CONT1
V
CONT2
C = 51 pF C = 51 pF
1 000 pF 1 000 pF
O
= 50 ZO = 50
16
1
O
= 50 ZO = 50
9
8
1 000 pF 1 000 pF
C = 51 pF C = 51 pF
OUT1
OUT2
CHANNEL SELECT TRUTH TABLE
Output Control Pin
OUT1 OUT2
LL
LR
RL
RR
On Channel
IN1 − OUT1 IN1 − OUT2
IN1 − OUT1 IN2 − OUT2
IN2 − OUT1 IN1 − OUT2
IN2 − OUT1 IN2 − OUT2
V
CONT3
V
CONT4
V
CONT1
V
CONT2
V
CONT3
V
CONT4
Low High High Low
Low High Low High
High Low High Low
High Low Low High
4
Data Sheet P14268EJ2V0DS00
µµµµ
PG181GR
TYPICAL CHARACTERISTICS (TA = +25
0
(dB)
INS
–10
Insertion Loss L
–20
START 0.050 000 000 GHz STOP 5.050 000 000 GHz
log MAG 2 dB/div.
1
2
C)
°°°°
INSERTION LOSS vs. FREQUENCY
3
Frequency f (GHz)
1:
–4.49 dB
0.95 GHz
2:
–4.93 dB
1.7 GHz
3:
–5.31 dB
2.15 GHz
0
–50
Isolation ISL (dB)
–100
START 0.050 000 000 GHz STOP 5.050 000 000 GHz
ISOLATION vs. FREQUENCY
log MAG 10 dB/div.
1
3
2
Frequency f (GHz)
1:
–54.70 dB
0.95 GHz
2:
–46.12 dB
1.7 GHz
3:
–40.84 dB
2.15 GHz
Data Sheet P14268EJ2V0DS00
5
INPUT RETURN LOSS vs. FREQUENCY
µµµµ
PG181GR
0
(dB)
in
–25
Input Return Loss RL
–50
log MAG 5 dB/div.
1
2
START 0.050 000 000 GHz STOP 5.050 000 000 GHz
3
Ferquency f (GHz)
1:
–17.37 dB
0.95 GHz
2:
–15.07 dB
1.7 GHz
3:
–13.41 dB
2.15 GHz
OUTPUT RETURN LOSS vs. FREQUENCY
0
(dB)
out
–25
Output Return Loss RL
–50
START 0.050 000 000 GHz STOP 5.050 000 000 GHz
log MAG 5 dB/div.
1
23
Frequency f (GHz)
1:
–32.13 dB
0.95 GHz
2:
–19.73 dB
1.7 GHz
3:
–19.68 dB
2.15 GHz
6
Data Sheet P14268EJ2V0DS00
PACKAGE DIMENSIONS
16 PIN HTSSOP (Unit: mm)
µµµµ
PG181GR
0.65 ±0.10.20 ±0.10
16
0.20 ±0.106.4 ±0.3
9
5.2 ±0.2 0.9 ±0.2
8
5.5 ±0.3
1
(Bottom View)
(2.5)
(1.8)
(0.1)
(0.4)
(2.7)
(0.5)
(1.5)
Data Sheet P14268EJ2V0DS00
7
µµµµ
PG181GR
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Conditions
Infrared Reflow Package peak temperature: 235 ° C or bel ow
Time: 30 seconds or less (at 210 °C) Count: 3, Exposure limi t: None
VPS Package peak t emperature: 215 °C or below
Time: 40 seconds or less (at 200 °C) Count: 3, Exposure limi t: None
Wave Soldering Soldering bath temperature: 260 °C or below
Time: 10 seconds or less Count: 1, Exposure limi t: None
Partial Heating Pin temperature: 300 °C
Time: 3 seconds or less (per side of device) Exposure limit: None
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Note
Note
Note
Note
Note
Recommended Condition Symbol
IR35-00-3
VP15-00-3
WS60-00-1
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
8
Data Sheet P14268EJ2V0DS00
[MEMO]
µµµµ
PG181GR
Data Sheet P14268EJ2V0DS00
9
[MEMO]
µµµµ
PG181GR
10
Data Sheet P14268EJ2V0DS00
[MEMO]
µµµµ
PG181GR
Data Sheet P14268EJ2V0DS00
11
µµµµ
PG181GR
CAUTION
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.
Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8
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