NEC UPG175TA-E3 Datasheet

PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µµµµ
PG175TA
L-Band PA DRIVER AMPLIFIER
DESCRIPTION
PG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC
µ
(Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion.
FEATURES
DD1
• Low Operation Voltage: V
•fRF: 925 to 960 MHz@ P
• Low distortion: P External input and output matching
• Low operation Current: IDD = 20 mA typ. @ VDD = 3.0 V, P External input and output matching
• Variable gain control function: ∆G = 35 dB typ. @ V
• 6 pin mini-mold package
out
adj1
= –60 dBc typ. @ VDD = 3.0 V, P
DD2
= V
= +9 dBm
= 3.0 V
out
= +9 dBm, V
out
= +9 dBm, V
AGC
= 0.5 to 2.5 V
AGC
= 2.5 V
AGC
= 2.5 V
APPLICATION
• Digital Cellular: PDC800M, etc.
ORDERING INFORMATION (PLAN)
PART NUMBER PACKAGE PACKING FORM
µ
PG175TA-E3 6 pin Mini-mold Carrier tape width is 8 mm, Quanti ty is 3 kpcs per reel.
Remark
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
For sample order, please contact your local NEC sales office. (Part number for sample order: µPG175TA)
GaAs HJ-FET.
The information in this document is subject to change without notice.
1998©
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETERS SYMBOL RATINGS UNIT
DD1
Supply Voltage V AGC Control Voltage V Input Power P Total Power Dissipat i on P Operating Temperature T Storage Temperature T
, V
AGC
tot
stg
DD2
in
A
–30 to +90 °C
–35 to +150 °C
6.0 V
6.0 V –8 dBm
Note
200
mW
µµµµ
PG175TA
Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, T
Note
PIN CONNECTION AND INTERNAL BLOCK DIAGRAM
PIN NO. CONNECTION PIN NO. CONNECTION
1V
DD1
4V
AGC
2 GND 5 GND 3V
DD2
& OUT 6 IN
Top View
3
2
1
4
5
G1E
6
Bottom View
4
5
6
3
2
1
RECOMMENDED OPERATING CONDITIONS (TA = 25°C)
PARAMETERS SYMBOL MIN. TYP. MAX. UNIT
3
2
1
A
= +85°C
Top View
4
5
6
Supply Voltage V
DD1
AGC Control Voltage V Input Power P
, V
AGC
DD2
+2.7 +3.0 +3.3 V
0.5 2.5 V
in
–21 –17 dBm
Preliminary Data Sheet2
µµµµ
PG175TA
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, T
A
= 25°C, V
DD1
= V
DD2
= +3.0 V,
/4DQPSK modulated signal input,
ππππ
External input and output matching)
PARAMETERS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Operating Frequency f 925 960 MHz Total Current I AGC Control Current I Power Gain G Variable Gain Range Adjacent Channel Power
P
Leakage 1 Adjacent Channel Power
P
Leakage 2 Input Return Loss RL Output Return Loss RL
DD
AGC
adj1
adj2
Pin = –21 dBm, V
AGC
V
= 0.5 to 2.5 V 200 500
p
Pin = –21 dBm, V
G
Pin = –21 dBm, V
out
P
= +9 dBm, V
f = ±50 kHz, 21 kHz Band Width
out
P
= +9 dBm, V
f = ±100 kHz, 21 kHz Band Width
in
External matching 10 dB
out
External matching 10 dB
AGC
= 2.5 V 20 30 mA
AGC
= 2.5 V 27 30 dB
AGC
= 0.5 to 2.5 V
AGC
= 2.5 V
AGC
= 2.5 V
30 35 dB
–60 –55 dBc
–70 –65 dBc
A
µ
Preliminary Data Sheet 3
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