NEC UPG110P, UPG110B Datasheet
DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And
the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of
the microwave communication system and the measurement equipment.
FEATURES
• Ultra wide band : 2 to 8 GHz
• High Power Gain : GP = 15 dB TYP. @f = 2 to 8 GHz
• Medium Power : P
O(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz
ORDERING INFORMATION
PART NUMBER FORM
µ
PG110P Chip
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Supply Voltage VDD +10 V
Input Voltage V
Input Power Pin +10 dBm
Total Power Dissipation Ptot*
Operating Temperature T
Storage Temperature Tstg –65 to +125 °C
*1 Mounted with AuSn hard solder
*2 The temperature of base material beside the chip
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)
Supply Voltage VDD +8 ± 0.2 V
Input Power P
in –5 dBm
IN –5 to +0.6 V
opr*
1
2
1.5 W
–65 to +125 °C
Document No. P11882EJ2V0DS00 (2nd edition)
(Previous No. ID-2454)
Date Published September 1996 P
Printed in Japan
©
1989
µ
PG110P
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Supply Current IDD 65 135 180 mA VDD = +8 V
Power Gain GP 12 15 dB
Gain Flatness
Input Return Loss RLin 610 dB
Output Return Loss RLout 710 dB
Isolation ISL 30 40 dB
Output Power at 1 dB PO(1 dB) 10 14 dBm
Gain Compression Point
*3
These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1
∆
GP ±1.5 dB
*3
f = 2 to 8 GHz
Fig. 1 4 pin Ceramic Package
Top View
4.5 MAX.
0.6
± 0.06
.
+0.2
–0.1
0.7
4.1 MIN.
0.1 ± 0.06
4.6 MAX.
0.4 ± 0.06
4.1 MIN.
1.48 MAX.
2
µ
PG110P
TYPICAL CHARACTERISTICS (TA = 25 °C)
POWER GAIN vs. FREQUENCY
30
20
10
- Power Gain - dB
P
G
0
012345678910
INPUT RETURN LOSS vs. FREQUENCY
0
*4
VDD = +8 V
IDD = 132 mA
f - Frequency - GHz
VDD = +8 V
IDD = 132 mA
RL
–10
in
–20
RL
out
- Output Return Loss - dB
- Input Return Loss - dB
in
out
–30
RL
RL
012345678910
f - Frequency - GHz
ISOLATION vs. FREQUENCY
0
DD
= +8 V
V
IDD = 132 mA
–20
–40
–60
ISL - Isolation - dB
–80
012345678910
f - Frequency - GHz
3
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