Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its recommended applications.
Caution The EPROM versions of the µPD78P4038Y are not intended for use in mass-produced products;
they do not have reliability high enough for such purposes. Their use should be restricted to
functional evaluation in experiment or trial manufacture.
Remark ××× is ROM code suffix.
2
78K/IV SERIES PRODUCT DEVELOPMENT DIAGRAM
: Product under mass production
: Product under preparation
Standard Products Development
µ
PD78P4038Y
µ
PD784026
A/D converters,
16-bit timers, and
power management
functions have been
enhanced.
ASSP Development
µ
PD784955
DC inverter control
Connectable to the I
µ
PD784038Y
µ
PD784038
Internal memory has been expanded.
Pin-compatible with the PD784026
Connectable to the multimaster I
PD784216Y
µ
µ
PD784216
100 pins
I/O has been enhanced.
Internal memory has been expanded.
µ
PD784054
µ
PD784046
Built-in 10-bit A/D converter
2
C bus
µ
2
C bus
Connectable to the multimaster I
µ
PD784225Y
µ
PD784225
80 pins
ROM correction function has been added.
Connectable to the multimaster I
µ
PD784218Y
µ
PD784218
Internal memory has been expanded.
ROM correction function has been added.
2
C bus
2
C bus
µ
PD784908
Built-in IEBus
µ
PD784915
Software servo control
Built-in analog circuit for VCR
Timers have been enhanced.
TM
controller
µ
PD784937
Functions of the PD784908 have been enhanced.
Internal memory has been expanded.
ROM correction function has been added.
128 Kbytes (Can be changed to 48 K, 64 K, or 96 Kbytes by software)
4,352 bytes (Can be changed to 2,048 or 3,584 bytes by software)
Program and data: 1 Mbyte
64
8
56
54
APPENDIX C RELATED DOCUMENTS..........................................................................................67
6
µ
PD78P4038Y
1. DIFFERENCES BETWEEN µPD78P4038Y AND MASKED ROM PRODUCTS
The µPD78P4038Y is produced by replacing the masked ROM in the µPD784035Y, µPD784036Y, µPD784037Y,
or µPD784038Y with PROM to which data can be written. The functions of the µPD78P4038Y are the same as those
of the µPD784035Y, µPD784036Y, µPD784037Y, or µPD784038Y except for the PROM specification such as writing
and verification, except that the PROM size can be changed to 48 K, 64 K, or 96 Kbytes, and except that the internal
RAM size can be changed to 2,048 or 3,584 bytes.
Table 1-1 shows the differences between these products.
µ
Table 1-1. Differences between the
PD78P4038Y and Masked ROM Products
Product Name
Item
Internal program
memory
Internal RAM
Package
µ
PD78P4038Y
• 128-Kbyte
PROM
• Can be changed
to 48 K, 64 K, or
96 Kbytes by
IMS
A8-A19: Address bus
AD0-AD7: Address/data bus
ANI0-ANI7: Analog input
ANO0, ANO1 : Analog output
ASCK, ASCK2 : Asynchronous serial clock
ASTB: Address strobe
DD: Analog power supply
AV
AVREF1-AVREF3 : Reference voltage
SS: Analog ground
AV
CI: Clock input
CLKOUT: Clock output
HLDAK: Hold acknowledge
HLDRQ: Hold request
INTP0-INTP5 : Interrupt from peripherals
NMI: Non-maskable interrupt
P00-P07: Port 0
P10-P17: Port 1
P20-P27: Port 2
P30-P37: Port 3
P40-P47: Port 4
P50-P57: Port 5
P60-P67: Port 6
P70-P77: Port 7
PWM0, PWM1 : Pulse width modulation output
RD: Read strobe
REFRQ: Refresh request
RESET: Reset
RxD, RxD2: Receive data
SCK0-SCK2: Serial clock
SCL: Serial clock
SDA: Serial data
SI0-SI2: Serial input
SO0-SO2: Serial output
TEST: Test
TO0-TO3: Timer output
TxD, TxD2: Transmit data
Function
Timer output
Input of a count clock for timer/counter 2
Serial data input (UART0)
Serial data input (UART2)
Serial data output (UART0)
Serial data output (UART2)
Baud rate clock input (UART0)
Baud rate clock input (UART2)
Serial data I/O (2-wire serial I/O, I2C bus)
Serial data input (3-wire serial I/O0)
Serial data input (3-wire serial I/O1)
Serial data input (3-wire serial I/O2)
Serial data output (3-wire serial I/O0)
Serial data output (3-wire serial I/O1)
Serial data output (3-wire serial I/O2)
Serial clock I/O (3-wire serial I/O0)
Serial clock I/O (3-wire serial I/O1)
Serial clock I/O (3-wire serial I/O2)
Serial clock I/O (2-wire serial I/O, I2C bus)
External interrupt request–
• Input of a count clock for timer/counter 1
• Capture/trigger signal for CR11 or CR12
• Input of a count clock for timer/counter 2
• Capture/trigger signal for CR22
• Input of a count clock for timer/counter 2
• Capture/trigger signal for CR21
• Input of a count clock for timer/counter 0
• Capture/trigger signal for CR02
–
Input of a conversion start trigger for A/D converter
Time multiplexing address/data bus (for connecting external memory)
High-order address bus (for connecting external memory)
High-order address bus during address expansion (for connecting external memory)
Strobe signal output for reading the contents of external memory
Strobe signal output for writing on external memory
Wait signal insertion
Refresh pulse output to external pseudo static memory
Input of bus hold request
Output of bus hold response
Latch timing output of time multiplexing address (A0-A7) (for connecting
Chip reset
Crystal input for system clock oscillation (A clock pulse can also be input
to the X1 pin.)
Analog voltage inputs for the A/D converter
Analog voltage inputs for the D/A converter
Application of A/D converter reference voltage
Application of D/A converter reference voltage
Positive power supply for the A/D converter
Ground for the A/D converter
Positive power supply of the port part
Positive power supply except for the port part
Ground of the port part
Ground except for the port part
Directly connect to VSS0. (The TEST pin is for the IC test.)
Notes 1. The potential of the VDD0 pin must be equal to that of the VDD1 pin.
2. The potential of the VSS0 pin must be equal to that of the VSS1 pin.
Function
4.2 Pins for PROM Programming Mode (V
4.2.1 Pin functions
Pin Name
VPP
RESET
A0-A16
D0-D7
CE
OE
PGM
VDD
VSS
I/O
–
Input
I/O
Input
–
–
PROM programming mode selection
High voltage input during program write or verification
PROM programming mode selection
Address bus
Data bus
PROM enable input/program pulse input
Read strobe input to PROM
Program/program inhibit input during PROM programming mode
Positive power supply
GND
PP≥ +5 V or +12.5 V, RESET = L)
Function
15
µ
PD78P4038Y
4.2.2 Pin functions
PP (Programming power supply): Input
(1) V
Input pin for setting the µPD78P4038Y to the PROM programming mode. When the input voltage on this pin
is +5 V or more and when RESET input goes low, the µPD78P4038Y enters the PROM programming mode.
When CE is made low for V
PROM cell selected by A0 to A16.
(2) RESET (Reset): Input
Input pin for setting the
when the input voltage on the VPP pin goes +5 V or more, the µPD78P4038Y enters the PROM programming
mode.
(3) A0 to A16 (Address bus): Input
Address bus that selects an internal PROM address (0000H to 1FFFFH)
(4) D0 to D7 (Data bus): I/O
Data bus through which a program is written on or read from internal PROM
PP = +12.5 V and OE = high, program data on D0 to D7 can be written into the internal
µ
PD78P4038Y to the PROM programming mode. When input on this pin is low, and
(5) CE (Chip enable): Input
This pin inputs the enable signal from internal PROM. When this signal is active, a program can be written or
read.
(6) OE (Output enable): Input
This pin inputs the read strobe signal to internal PROM. When this signal is made active for CE = low, a onebyte program in the internal PROM cell selected by A0 to A16 can be read onto D0 to D7.
(7) PGM (Program): Input
The input pin for the operation mode control signal of the internal PROM.
Upon activation, writing to the internal PROM is enabled.
Upon inactivation, reading from the internal PROM is enabled.
DD
(8) V
Positive power supply pin
SS
(9) V
Ground potential pin
16
4.3 I/O Circuits for Pins and Handling of Unused Pins
Table 4-1 describes the types of I/O circuits for pins and the handling of unused pins.
Figure 4-1 shows the configuration of these various types of I/O circuits.
Table 4-1. Types of I/O Circuits for Pins and Handling of Unused Pins (1/2)
Input state: To be connected to VDD0
Output state: To be left open
To be connected to VDD0 or VSS0
To be connected to VDD0
Input state: To be connected to VDD0
Output state: To be left open
To be connected to VDD0
Input state: To be connected to VDD0
Output state: To be left open
Input state: To be connected to VDD0 or VSS0
Output state: To be left open
To be left open
17
Table 4-1. Types of I/O Circuits for Pins and Handling of Unused Pins (2/2)
µ
PD78P4038Y
Pin
RESET
TEST
AVREF1-AVREF3
AVSS
AVDD
I/O Circuit Type
2
1-A
–
I/O
Input
Recommended Connection Method for Unused Pins
–
To be connected to VSS0 directly
To be connected to VSS0
To be connected to VDD0
Caution When the I/O mode of an I/O alternate-function pin is unpredictable, connect the pin to V
through a resistor of 10 to 100 kilohms (particularly when the voltage of the reset input pin
becomes higher than that of the low level input at power-on or when I/O is switched by software).
Remark Since type numbers are consistent in the 78K Series, those numbers are not always serial in each
product. (Some circuits are not included.)
DD0
18
Figure 4-1. I/O Circuits for Pins
µ
PD78P4038Y
Type 1-AType 2-C
V
DD0
P
IN
N
V
SS0
Type 2
IN
Schmitt trigger input with hysteresis characteristics
Type 5-H
Schmitt trigger input with hysteresis characteristics
Type 4-B
Data
DD0
V
P
OUT
Output
disable
N
V
SS0
Push-pull output which can output high impedance
(both the positive and negative channels are off.)
IN
Pull-up
enable
Data
Output
disable
Input
enable
VDD0
V
DD0
Pull-up
enable
P
P
V
DD0
P
IN/OUT
N
V
SS0
Type 8-C
Pull-up
enable
Output
disable
Type 10-B
Pull-up
enable
Open
drain
Output
disable
Data
Data
Type 12
V
DD0
P
V
DD0
P
Analog output
voltage
IN/OUT
P
OUT
N
N
V
SS0
Type 20-A
V
DD0
V
DD0
Data
P
Output
V
DD0
disable
P
IN/OUT
N
V
SS0
Comparator
+
–
(Threshold voltage)
AV
AV
SS
REF
P
IN/OUT
N
V
SS0
P
N
Input
enable
19
µ
PD78P4038Y
5. INTERNAL MEMORY SWITCHING (IMS) REGISTER
This register enables the software to avoid using part of the internal memory. The IMS register can be set to
establish the same memory mapping as used in ROM products that have different internal memory (ROM and RAM)
configurations.
The IMS register is set using 8-bit memory operation instructions.
PD784035Y, µPD784036Y, µPD784037Y, or µPD784038Y).
Same as the PD784038Y
Same as the PD784037Y
Same as the PD784036Y
Same as the PD784035Y
Address
0FFFCH
Memory Size
µ
µ
µ
µ
After Reset
FFH
R/W
But the action is not affected if the write command to the IMS is executed to the mask ROM product.
W
20
µ
PD78P4038Y
6. PROM PROGRAMMING
The µPD78P4038Y has an on-chip 128-KB PROM device for use as program memory. When programming, set
the VPP and RESET pins for PROM programming mode. See (2) in Chapter 2 with regard to handling of other, unused
pins.
6.1 Operation Mode
PROM programming mode is selected when +5 V or +12.5 V is added to the V
to the RESET pin. This mode can be set to operation mode by setting the CE pin, OE pin, and PGM pin as shown
in Table 6-1 below.
In addition, the PROM contents can be read by setting read mode.
Set OE to H to set high impedance for data output and output disable mode.
µ
Consequently, if several
select data output from any of the devices.
(3) Standby mode
Set CE to H to set standby mode.
In this mode, data output is set to high impedance regardless of the OE setting.
(4) Page data latch mode
At the beginning of page write mode, set CE to H, PGM to H, and OE to L to set page data latch mode.
In this mode, 1 page (4 bytes) of data are latched to the internal address/data latch circuit.
(5) Page write mode
After latching the address and data for one page (4 bytes) using page data latch mode, adding a 0.1 ms program
pulse (active, low) to the PGM pin with both CE and OE set to H causes page write to be executed. Later, setting
both CE and OE to L causes program verification to be executed.
If programming is not completed after one program pulse, the write and verify operations may be repeated X times
(where X ≤ 10).
PD78P4038Y devices are connected to a data bus, the OE pins can be controlled to
(6) Byte write mode
Adding a 0.1 ms program pulse (active, low) to the PGM pin with both CE and OE set to H causes byte write
to be executed. Later, setting OE to L causes program verification to be executed.
If programming is not completed after one program pulse, the write and verify operations may be repeated X times
(where X ≤ 10).
(7) Program verify mode
Set CE to L, PGM to H, and OE to L to set program verify mode. Use verify mode for verification following each
write operation.
(8) Program inhibit mode
µ
Program inhibit mode is used to write to a single device when several
parallel to OE , VPP, and D0 to D7 pins.
Use the page write mode or byte write mode described above for each write operation. Write operations cannot
be done for devices in which the PGM pin has been set to H.
PD78P4038Y devices are connected in
22
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