NEC AC03DGM Datasheet

DATA SHEET

THYRISTORS

AC03DGM, AC03FGM

3 A MOLD TRIAC

The AC03EGM and AC03FGM are fully diffused mold TRIACs

with an effective on-current of 3 A. The repeat peak off-voltages

are 400 V and 600 V.

FEATURES

• Gate trigger current (mode I, III, and IV) at 12 mA or less is

guaranteed.

• This transistor features a small and lightweight package and is

easy to handle even on the mounting surface due to its TO-

202AA dimensions. Processing of lead wires and heatsink

(tablet) using jigs is also possible.

• High degrees-of-freedom applications design is available due to

high gate trigger sensitivity and small hold current distribution.

• Employs flame-retardant epoxy resin (UL94V-0).

APPLICATIONS

Noncontact switches of motor speed control, heater

temperature control, lamp light control

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°°°C)

Parameter Symbol AC03DGM AC03FGM Unit Remarks

Non-repetitive peak off-state voltage V

Repetitive peak off-voltage V

Effective on-state current I

Surge on-state current I

Fusing current ƒi

Critical rate of rise of on-state
current

Peak gate power dissipation P

Average gate power dissipation P

Peak gate current I

Junction temperature T

Storage temperature T

T(RMS)

dIT/dt 40 A/µs

DSM

DRM

TSM

2

dt 4.0 (1 ms ≤ t ≤ 10 ms) A

T

GM

G(AV)

GM

j

stg

500 700 V

400 600 V

3 (TC = 92°C) A Refer to Figures

30 (50 Hz 1 cycle)

33 (60 Hz 1 cycle)

3 (f ≥ 50 Hz, Duty ≤ 10 %) W

0.3 W

±0.5 (f ≥ 50 Hz, Duty ≤ 10 %) A

−40 to +125 °C

−55 to +150 °C

PACKAGE DRAWING (UNIT: mm)

*TC test bench-mark Standard weight: 1.4 g

−

−

11 and 12.

A Refer to Figure 2.

2

S

−

−

−

−

−

−

−

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D13536EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan

2002

1998©

AC03DGM, AC03FGM

ELECTRICAL CHARACTERISTICS (Tj = 25°°°°C, RGK = 1 kΩΩΩΩ)

Parameter Symbol Conditions MIN. TYP. MAX. Unit Remarks

Repeat peak off-current I

On-state voltage V

Mode I T2 +, G+

Gate trigger
current

II

III

IV

Mode I T2 +, G+

Gate trigger
voltage

II

III

IV

Gate non-trigger voltage V

Hold current I

Critical rate of rise of off­state voltage

Commutating critical rate of
rise of off-state voltage

Thermal resistance*

dv/dt

(dv/dt)c

R

R

DRM

I

GT

V

th(j−c)

th(j−a)

VDM = V

ITM = 5 A

TM

VDM = 12 V

= 30 Ω

L

R

VDM = 12 V

GT

GD

H

= 30 Ω

L

R

Tj = 125°C, VDM =

VDM = 24 V, ITM = 5 A

T

= 125°C, VDM =

j

= 125°C

T

j

(di

/dt)c = −1.6 A/ms

T

= 400 V

D

V

Junction-to-case AC

Junction-to-ambient AC

DRM

Tj = 25°C −−

Tj = 125°C −−

−−

−−

−, G+ −−−

T

2

−, G−−−

T

2

T

+, G−−−

2

−−

−, G+ −−−

T

2

−, G−−−

T

2

T

+, G−−−

2

1

V

DRM

2

0.2

−

2

V

DRM

3

−

5

−−

10

100

−−V/

−−

−−

100

1mA

1.8 V

12

12

12

1.5

1.5

1.5

−

− V/

10

75

* The thermal resistance at 50 Hz and 60 Hz sine wave current, which is shown on the following expression:

–T

Tj(max)

th(j−c)

=

R

C

T

P

T(AV)

:Maximum junction temperature

j(max)

:Case temperature

TC

P

:Average on-dissipation

T(AV)

A

µ

mA

V

V

mA

s −

µ

s −

µ

°C/W

°C/W

−

Refer to

Figure 1.

Refer to

Figure 4.

Refer to

Figure 4.

−

−

Refer to

Figure 13.

2

Data Sheet D13536EJ3V0DS