Motorola MC10SX1125D Datasheet

MCM6343

1

MOTOROLA FAST SRAM

Product Preview

256K x 16 Bit 3.3 V Asynchronous
Fast Static RAM

The MCM6343 is a 4,194,304–bit static random access memory organized as
262,144 words of 16 bits. Static design eliminates the need for external clocks
or timing strobes.

The MCM6343 is equipped with chip enable (E

), write enable (W), and output

enable (G

) pins, allowing for greater system flexibility and eliminating bus con-

tention problems. Separate byte enable controls (LB

and UB) allow individual

bytes to be written and read. LB

controls the lower bits DQ0 to DQ7, while UB

controls the upper bits DQ8 to DQ15.

The MCM6343 is available in a 400 mil, 44–lead small–outline SOJ package
and a 44–lead TSOP Type II package.

• Single 3.3 V ± 0.3 V Power Supply

• Fast Access Time: 12/15 ns

• Equal Address and Chip Enable Access Time

• All Inputs and Outputs are TTL Compatible

• Data Byte Control

• Fully Static Operation

• Power Operation: 250/240/230 mA Maximum, Active AC

• Commercial and Standard Industrial Temperature Option: – 40 to + 85°C

BLOCK DIAGRAM

OUTPUT
ENABLE
BUFFER

ADDRESS
BUFFERS

WRITE
ENABLE
BUFFER

BYTE
ENABLE
BUFFER

ROW

DECODER

COLUMN

DECODER

256K x 16

BIT

MEMORY

ARRAY

HIGH

BYTE
OUTPUT
BUFFER

8

HIGH

BYTE

WRITE

DRIVER

LOW

BYTE
OUTPUT
BUFFER

LOW

BYTE

WRITE

DRIVER

SENSE

AMPS

G

W

LB

8

8

8

8

88

8

9

A

CHIP
ENABLE
BUFFER

E

UB

9

HIGH BYTE OUTPUT ENABLE

LOW BYTE OUTPUT ENABLE

HIGH BYTE WRITE ENABLE

LOW BYTE WRITE ENABLE

16

18

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Order this document

by MCM6343/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MCM6343

YJ PACKAGE

400 MIL SOJ

CASE 919–01

PIN ASSIGNMENT

A0 – A17 Address Input. . . . . . . . . . . . . . . . .

E

Chip Enable. . . . . . . . . . . . . . . . . . . . . . . . .

W

Write Enable. . . . . . . . . . . . . . . . . . . . . . .

G

Output Enable. . . . . . . . . . . . . . . . . . . . . .

UB

Upper Byte. . . . . . . . . . . . . . . . . . . . . . . .

LB

Lower Byte. . . . . . . . . . . . . . . . . . . . . . . . .

DQ0 – DQ15 Data Input/Output. . . . . . . . . .

V

DD

+ 3.3 V Power Supply. . . . . . . . . . . . . .

V

SS

Ground. . . . . . . . . . . . . . . . . . . . . . . . . .

NC No Connection. . . . . . . . . . . . . . . . . . . . .

PIN NAMES

5

4

3

2

1

10

9

8

7

6

11

36

37

38

39

40

41

42

35

43

44

34

E

A

A

A

A

DQ1

DQ0

A

V

DD

DQ3

DQ2

UB

G

A

A

A

DQ12

DQ13

DQ14

V

SS

DQ15

LB

25

26

27

28

29

30

31

24

32

33

23

12
13
14
15
16

17
18
19
20
21
22

DQ8

DQ9

DQ10

DQ11

V

DD

A

A

A

A

A

NCW

DQ6

DQ5

DQ4

V

SS

A

A

DQ7

A

A

A

TS PACKAGE
TSOP TYPE II

CASE 924A–02

REV 2
2/10/98

 Motorola, Inc. 1998

MCM6343
2

MOTOROLA FAST SRAM

TRUTH TABLE (X = Don’t Care)

E G W LB UB Mode VDD Current DQ0 – DQ7 DQ8 – DQ15

H X X X X Not Selected I

SB1

, I

SB2

High–Z High–Z

L H H X X Output Disabled I

DDA

High–Z High–Z

L X X H H Output Disabled I

DDA

High–Z High–Z

L L H L H Low Byte Read I

DDA

D

out

High–Z

L L H H L High Byte Read I

DDA

High–Z D

out

L L H L L Word Read I

DDA

D

out

D

out

L X L L H Low Byte Write I

DDA

D

in

High–Z

L X L H L High Byte Write I

DDA

High–Z D

in

L X L L L Word Write I

DDA

D

in

D

in

ABSOLUTE MAXIMUM RATINGS (See Notes)

Rating Symbol Value Unit

Supply Voltage V

DD

– 0.5 to + 4.6 V

Voltage on Any Pin V

in

– 0.5 to VDD + 0.5 V

Output Current per Pin I

out

± 20 mA

Package Power Dissipation P

D

TBD W

Temperature Under Bias Commercial

Industrial

T

bias

– 10 to + 85
– 45 to + 90

°C

Operating Temperature Commercial

Industrial

T

A

0 to + 70

– 45 to + 85

°C

Storage Temperature T

stg

– 55 to + 150 °C

NOTES:

1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER­ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.

2. All voltages are referenced to VSS.

3. Power dissipation capability will be dependent upon package characteristics and use
environment.

This device contains circuitry to protect the
inputs against damage due to high static volt­ages or electric fields; however, it is advised
that normal precautions be taken to avoid ap­plication of any voltage higher than maximum
rated voltages to these high–impedance circuits.

This CMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board and
transverse air flow of at least 500 linear feet per
minute is maintained.

MCM6343

3

MOTOROLA FAST SRAM

DC OPERA TING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V ± 0.3 V, TA = 0 to 70°C, Unless Otherwise Noted)

(TA = – 40 to + 85°C for Industrial Temperature Offering)

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Typ Max Unit

Power Supply Voltage V

DD

3.0 3.3 3.6 V

Input High Voltage V

IH

2.2 —

VDD + 0.3**

V

Input Low Voltage V

IL

– 0.5*

— 0.8 V

*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.

**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.

DC CHARACTERISTICS

Parameter Symbol Min Max Unit

Input Leakage Current (All Inputs, Vin = 0 to VDD) I

lkg(I)

— ±1.0 µA

Output Leakage Current (E = VIH, V

out

= 0 to VDD) I

lkg(O)

— ±1.0 µA

Output Low Voltage (IOL = + 4.0 mA)

(IOL = + 100 µA)

V

OL

— 0.4

VSS + 0.2

V

Output High Voltage (IOH = – 4.0 mA)

(IOH = – 100 µA)

V

OH

2.4

VDD – 0.2

— V

POWER SUPPLY CURRENTS

Parameter Symbol 0 to 70°C

– 40 to
+ 85°C

Unit

AC Active Supply Current MCM6343–12: t

AVAV

= 12 ns

(I

out

= 0 mA, VCC = max) MCM6343–15: t

AVAV

= 15 ns

I

CC

240
230

240

mA

AC Standby Current (VCC = max, E = VIH, MCM6343–12: t

AVAV

= 12 ns

No other restrictions on other inputs) MCM6343–15: t

AVAV

= 15 ns

I

SB1

50
45

55
50

mA

CMOS Standby Current (E ≥ VCC – 0.2 V , Vin ≤ VSS + 0.2 V or ≥ VCC – 0.2 V)

(VCC = max, f = 0 MHz)

I

SB2

5 5

mA

CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T

A

= 25°C, Periodically Sampled Rather Than 100% Tested)

Parameter Symbol Typ Max Unit

Address Input Capacitance C

in

— 6 pF

Control Input Capacitance C

in

— 6 pF

Input/Output Capacitance C

I/O

— 8 pF