Motorola MBD54DWT1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 V @ IF = 10 mAdc

Anode 1 6 Cathode

N/C 2 5 N/C

Order this document

by MBD54DWT1/D



Motorola Preferred Device

30 VOLTS

DUAL HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

Cathode 3 4 Anode

MAXIMUM RATINGS

Reverse Voltage V
Forward Power Dissipation

@ TA = 25°C

Derate above 25°C
Forward Current (DC) I
Junction Temperature T
Storage Temperature Range T

(TJ = 125°C unless otherwise noted)

Rating

Symbol Value Unit

R

P

F

F

J

stg

DEVICE MARKING

MBD54DWT1 = BL

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage (IR = 10 µA) V
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) C
Reverse Leakage (VR = 25 V) I
Forward Voltage (IF = 0.1 mAdc) V
Forward Voltage (IF = 30 mAdc) V
Forward Voltage (IF = 100 mAdc) V
Reverse Recovery Time

(IF = IR = 10 mAdc, I
Forward Voltage (IF = 1.0 mAdc) V
Forward Voltage (IF = 10 mAdc) V
Forward Current (DC) I
Repetitive Peak Forward Current I
Non–Repetitive Peak Forward Current (t < 1.0 s) I

Preferred devices are Motorola recommended choices for future use and best overall value.

Thermal Clad is a registered trademark of the Bergquist Company .
REV 3

= 1.0 mAdc) Figure 1

R(REC)

= 25°C unless otherwise noted) (EACH DIODE)

A

(BR)R

T

R

F
F
F

t

rr

F
F

F
FRM
FSM

6

5

4

1

2

3

CASE 419B–01, STYLE 6

30 Volts

150

1.2
200 Max mA
125 Max °C

–55 to +150 °C

30 — — Volts
— 7.6 10 pF
— 0.5 2.0 µAdc
— 0.22 0.24 Vdc
— 0.41 0.5 Vdc
— 0.52 1.0 Vdc
— — 5.0 ns

— 0.29 0.32 Vdc
— 0.35 0.40 Vdc
— — 200 mAdc
— — 300 mAdc
— — 600 mAdc

SOT–363

mW

mW/°C

 Motorola, Inc. 1997

5–1Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBD54DWT1

820

Ω

+10 V

0.1 µF

2 k

100

0.1

µ

I

F

µ

H

F

t

t

r

p

10%

t

I

F

t

rr

t

Ω

50

PULSE

GENERATOR

100

10

125°C

1.0

, FORWARD CURRENT (mA)

F

I

0.1

0.0 0.1

OUTPUT

150°C

DUT

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

V

R(peak)

R

90%

INPUT SIGNAL

is equal to 10 mA.

I

R

OUTPUT PULSE

(IF = IR = 10 mA; measured

at i

R(REC)

Figure 1. Recovery Time Equivalent Test Circuit

1000

TA = 150°C

A)

100

µ

10

1.0

0.1

, REVERSE CURRENT (

85°C

25°C

0.2 0.3 0.4

VF, FORWARD VOLTAGE (VOLTS)

–40°C

–55°C

0.5

0.6

R

I

0.001

0.01

0

5101520

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Forward V oltage Figure 3. Leakage Current

i

R(REC)

= 1 mA)

TA = 125°C

TA = 25°C
25

= 1 mA

TA = 85°C

30

5–2

14

12

10

8

6

4

, TOTAL CAP ACITANCE (pF)

T

C

2
0

0

51015 30

VR, REVERSE VOLTAGE (VOLTS)

2520

Figure 4. T otal Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data