LG MU515 Service Manual

Date: January, 2008 / Issue 1.0

Service Manual

MU515

Service Manual

Model : MU515

Internal Use Only

- 3 -

1. INTRODUCTION .............................. 5

1.1 Purpose................................................... 5

1.2 Regulatory Information............................ 5

2. PERFORMANCE...............................7

2.1 System Specification................................7

2.2 Using Condition (Accessory)....................7

2.3 Radio Performance..................................8

2.4 Current Consumption.............................11

2.5 Operation Time ......................................11

2.6 RSSI Bar................................................11

2.7 Battery Bar.............................................12

2.8 BACKUP BATTERY...............................12

2.9 Sound Level...........................................12

3. TECHNICAL BRIEF ........................13

3.1 General Description ...............................13

3.2 GSM Mode.............................................15

3.3 UMTS Mode...........................................19

3.4 LO Phase-locked Loop ..........................22

3.5 Off-chip RF Components .......................24

3.6 Digital Baseband(DBB/MSM6260).........32

3.7 Block Diagram(MSM6260).....................34

3.8 Subsystem(MSM6260) ..........................35

3.9 Power Block...........................................43

3.10 External memory interface...................48

3.11 H/W Sub System..................................49

3.12 Main Features......................................65

4. TROUBLE SHOOTING ...................69

4.1 RF Component.......................................69

4.2 Checking VCXO Block...........................72

4.3 Checking Ant. SW Module Block ...........74

4.4 Checking UMTS Block...........................76

4.5 Checking GSM Block.............................83

4.6 Power ON Troubleshooting....................92

4.7 Charger Troubleshooting .......................95

4.8 USB Troubleshooting.............................98

4.9 SIM Detect Troubleshooting ................100

4.10 Camera Troubleshooting ...................102

4.11 Keypad Backlight Troubleshooting ....104

4.12 Folder ON/OFF Troubleshooting .......105

4.13 Main LCD Troubleshooting ................106

4.14 Receiver Path ....................................107

4.15 Headset path......................................109

4.16 Speaker phone path...........................111

4.17 Main microphone ...............................113

4.18 Headset microphone..........................115

4.19 Vibrator ..............................................117

5. DOWNLOAD..................................118

5.1 Introduction ..........................................118

5.2 Downloading Procedure.......................118

5.3 Troubleshooting Download Errors .......133

5.4 Caution.................................................141

6. BLOCK DIAGRAM ........................142

6.1 GSM & UMTS RF Block.......................142

6.2 Interface Diagram ................................143

7. Circuit Diagram ............................145

8. BGM Pin Map................................153

9. PCB LAYOUT................................167

10. Calibration & RF Auto Test

Program (Hot Kimchi)................159

10.1 Configuration of HOT KIMCHI ...........159

10.2 How to use HOT KIMCHI...................160

11. EXPLODED VIEW &

REPLACEMENT PART LIST ..... 163

11.1 EXPLODED VIEW ............................ 163

11.2 Replacement Parts

<Mechanic component>.................... 165

<Main component> ........................... 169

11.3 Accessory ......................................... 186

Table Of Contents

LGE Internal Use Only

- 4 -

LGE Internal Use Only

Only for training and service purposes

LGE Internal Use Only

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1.1 Purpose

This manual provides the information necessary to repair, calibration, description and download the features of this model.

1.2 Regulatory Information

A. Security

Toll fraud, the unauthorized use of telecommunications system by an unauthorized part (for example, persons other than your company’s employees, agents, subcontractors, or person working on your company’s behalf) can result in substantial additional charges for your telecommunications services. System users are responsible for the security of own system. There are may be risks of toll fraud associated with your telecommunications system. System users are responsible for programming and configuring the equipment to prevent unauthorized use. The manufacturer does not warrant that this product is immune from the above case but will prevent unauthorized use of commoncarrier telecommunication service of facilities accessed through or connected to it. The manufacturer will not be responsible for any charges that resultfrom such unauthorized use.

B. Incidence of Harm

If a telephone company determines that the equipment provided to customer is faulty and possibly causing harm or interruption in service to the telephone network, it should disconnect telephone service until repair can be done. A telephone company may temporarily disconnect service as long as repair is not done.

C. Changes in Service

A local telephone company may make changes in its communications facilities or procedure. If these changes could reasonably be expected to affect the use of the phones or compatibility with the net work, the telephone company is required to give advanced written notice to the user, allowing the user to take appropriate steps to maintain telephone service.

D. Maintenance Limitations

Maintenance limitations on the phones must be performed only by the manufacturer or its authorized agent. The user may not make any changes and/or repairs expect as specifically noted in this manual. Therefore, note that unauthorized alternations or repair may affect the regulatory status of the system and may void any remaining warranty.

1. INTRODUCTION

LGE Internal Use Only

Only for training and service purposes

E. Notice of Radiated Emissions

This model complies with rules regarding radiation and radio frequency emission as defined by local regulatory agencies. In accordance with these agencies, you may be required to provide information such as the following to the end user.

F. Pictures

The pictures in this manual are for illustrative purposes only; your actual hardware may look slightly different.

G. Interference and Attenuation

A phone may interfere with sensitive laboratory equipment, medical equipment, etc. Interference from unsuppressed engines or electric motors may cause problems.

H. Electrostatic Sensitive Devices

ATTENTION

Boards, which contain Electrostatic Sensitive Device (ESD), are indicated by the sign. Following information is ESD handling:

• Service personnel should ground themselves by using a wrist strap when exchange system boards.

• When repairs are made to a system board, they should spread the floor with anti-static mat which is also grounded.

• Use a suitable, grounded soldering iron.

• Keep sensitive parts in these protective packages until these are used.

• When returning system boards or parts like EEPROM to the factory, use the protective package as described.

1. INTRODUCTION

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LGE Internal Use Only

2. PERFORMANCE

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2.1 System Specification

2.2 Using Condition (Accessory)

1) Maximum Using Condition (Using Environment)

2. PERFORMANCE

Item Type / Spec.

1.Type TFT Main_LCD & Mono Sub LCD Folder

2.Size 96 x 49.5 x 18.3 mm

3.Weight 100.5g, (With 1,000mA Battery)

4.Battery Standard :1,000 mAh (Li-ion)

5.LCD Type TFT Main LCD(2’, 176 x 220), Mono Sub LCD(1.3’ 128 X160)

6.Accessory

1)Travel Adaptor 1) Input : AC 100~240V , Output : 5.1V, 700mA

2)Ear-Mic Adaptor 2) ELA

3)Data Cable 3) USB data cable (option)

Item Specification

Available AC Input Power AC : 240 V Max

Available DC Input Power DC : 12 V Max

Storage Temperature - 20 ~ + 70 °C

LGE Internal Use Only

Only for training and service purposes

2) General Using Condition

2.3 Radio Performance

1) Transmitter-GSM Mode

2. PERFORMANCE

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Item Spec. Min Typ. Max Unit

Output Power

DC Power 12 Vdc

Battery Power 3.2 3.7 4.2 Vdc

Input Power AC Power 100 110 240 Vac

Current Consumption W

Operation Temperature -20 60 °C

Item Specification

Phase Error

Rms : 5° Peak : 20°

Frequency Error

GSM : 0.1 ppm DCS/PCS : 0.1 ppm

EMC(Radiated Spurious Emission

GSM/DCS : < -28dBm

Disturbance)

Transmitter Output power and Burst Timing

GSM : 5dBm - 33dBm ± 3dB

DCS/PCS : 0dBm - 30dBm ± 3dB Burst Timing <3.69us Spectrum due to modulation out to less 200kHz : -36dBm than 1800kHz offset 600kHz : -51dBm/-56dBm

GSM :

1800-3000kHz :< -63dBc(-46dBm) Spectrum due to modulation out to larger 3000kHz-6000kHz : <-65dBc(-46dBm) than 1800kHz offset to the edge of the 6000kHz < : < -71dBc(-46dBm) transmit band DCS :

1800-3000kHz :< -65dBc(-51dBm)

6000kHz < : < -73dBc(-51dBm)

Spectrum due to switching transient

400kHz : -19dBm/-22dBm(5/0), -23dBm

600kHz : -21dBm/-24dBm(5/0), -26dBm Reference Sensitivity - TCH/FS Class II(RBER) : -105dBm(2.439%) Usable receiver input level range 0.012(-15 - -40dBm) Intermodulation rejection - Speech ± 800kHz, ± 1600kHz channels : -98dBm/-96dBm (2.439%) AM Suppression

-98dBm/-96dBm (2.439%)

-GSM : -31dBm - DCS : -29dBm Timing Advance ± 0.5T

LGE Internal Use Only

2. PERFORMANCE

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2)Transmitter - WCDMA Mode

Item Specification

Transmit Frequency

WCDMA850 : 824 MHz ~ 849 MHz

WCDMA1900 : 1850 ~1910 MHz Maximum Output Power +24 dBm / 3.84 MHz, +1 / -3 dB Frequency Error within ±0.1 PPM

Open Loop Power Control

Normal Conditions : within ±9 dB,

Extreme Conditions : within ±12 dB Minimum Transmit Power < -50 dBm /3.84 MHz Occupied Bandwidth < 5 MHz at 3.84 Mcps (99% of power) Adjacent Channel > 33 dB @ ±5 MHz, Leakage Power Ratio (ACLR) > 43 dB @ ±10 MHz

< -36 dBm / 1 kHz RW @ 9 kHz ≤ < 150 kHz

< -36 dBm / 10 kHz RW @ 150 KHz ≤ f < 30 MHz

< -36 dBm / 100 kHz RW @ 30 MHz ≤ f < 1 GHz Spurious Emissions < -30 dBm / 1 MHz RW @ 1 GHz ≤ f < 12.75 GHz |f-fc| > 12.5 MHz < -41 dBm / 300 kHz RW @ 1893.5 MHz < f < 1919.6 MHz

< -67 dBm / 100 kHz RW @ 925 MHz ≤ f ≤ 935 MHz

< -79 dBm / 100 kHz RW @ 935 MHz < f ≤ 960 GHz

< -71 dBm / 100 kHz RW @ 1805 MHz ≤ f ≤ 1880 MHz

Transmit Intermodulation

< -31 dBc @ 5 MHz & < -41 dBc @ 10 MHz

when Interference CW Signal Level = -40 dBc Error Vector Magnitude < 17.5 %, when Pout ≥ -20 dBm Peak Code Domain Error < -15 dB at Pout ≥ -20 dBm

LGE Internal Use Only

Only for training and service purposes

2. PERFORMANCE

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3)Receiver - WCDMA Mode

Item Specification

Receive Frequency

WCDMA850 : 849 MHz ~ 894 MHz

WCDMA1900 : 1930 ~1990 MHz Reference Sensitivity Level BER < 0.001 when Îor= -106.7 dBm / 3.84 MHz Maximum Input Level BER < 0.001 when Îor= -25 dBm / 3.84 MHz Adjacent Channel ACS > 33 dB where BER < 0.001 when Îor= -92.7 dBm / 3.84 MHz Selectivity (ACS) & I

oac

= -52 dBm / 3.84 MHz @ ±5 MHz

BER < 0.001 when Îor= -103.7 dBm / 3.84 MHz Blocking Characteristic & I

blocking

= -56 dBm / 3.84 MHz @ Fuw(offset) = ±10 MHz

or I

blocking

= -44 dBm / 3.84 MHz @ Fuw(offset) = ±15 MHz

Spurious Response BER < 0.001 when Îor= -103.7 dBm / 3.84 MHz & I

blocking

= -44 dBm

BER < 0.001 when Îor= -103.7 dBm / 3.84 MHz Intermodulation & I

ouw1

= -46 dBm @ F

uw1

(offset) = 10 MHz

& I

ouw2

= -46 dBm / 3.84 MHz @ F

uw2

(offset) = ±20 MHz

Spurious Emissions < -57 dBm / 100 kHz BW @ 9 kHz ≤ f < 1 GHz

< -47 dBm / 1 MHz BW @ 1 GHz ≤ f ≤ 12.75 GHz

LGE Internal Use Only

2. PERFORMANCE

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2.4 Current Consumption

2.5 Operation Time

2.6 RSSI Bar

WCDMA Only GSM Only

Sleep Mode 1.5mA(sleep current) ↓ 1.5mA(sleep current) ↓

Standby 4mA(DRX=1.28sec) ↓ 4mA(MF=5) ↓

Talk Mode

VC 13dBm

310 (Tx Lvl:5) ↓

(low power mode) : 300 mA↓

NO SVC Mode TBD TBD

Power Off 300µA ↓ 300µA ↓

(Backup Battery Charging) 500µA ↓ 500µA ↓

Level Change WCDMA GSM

1) BAR 5 -90 ± 2 dBm -87 ± 2 dBm

2) BAR 5 → 4 -90 ± 2 dBm -87 ± 2 dBm

3) BAR 4 → 3 -95 ± 2 dBm -92 ± 2 dBm

4) BAR 3 → 2 -100 ± 2 dBm -97 ± 2 dBm

5) BAR 2 → 1 -103 ± 2 dBm -102 ± 2 dBm

6) BAR 1 →0 -106 ± 2 dBm -107 ± 2 dBm

Stand by Voice Call VT

WCDMA 333 hours ↑ = 3mA ↓ 180 mins ↑ = 300mA

Only (1000mAh battery, (1000mAh battery, /

DRX cycle = 1.28) TX = 13dBm)

GSM 333 hours ↑ = 3mA ↓ 190 mins ↑ = 310mA ↓ Only (1000mAh battery, (1000mAh battery,

Paging frame class5) TX = Level 5)

LGE Internal Use Only

Only for training and service purposes

2. PERFORMANCE

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2.7 Battery Bar

2.8 BACKUP BATTERY : Over 50 hours

(When Normal POWER OFF/EMERGENCY OFF)

2.9 Sound Level

Key Tone

1) Standby : a) Speaker : 70~120dBspl (When 30cm distance, Maximum Tone) b) Headset : 70~100dBspl c) Warning Tone : 70~120dBspl (When 30cm distance, Maximum Tone)

2) Talk : a) Speaker : 70 ~ 100dBspl b) Headset : 70 ~ 100dBspl (Key Tone(In Calling) 100dBspl under) c) Warning Tone : 70~100dBspl (When 30cm distance, Maximum Tone)

Indication Standby

Bar3 3.76 ± 0.05V

Bar 3 → 2 3.76 ± 0.05V

Bar 2 → 1 3.687 ± 0.05V

Bar 1 → Empty 3.617 ± 0.05V

Low Voltage, Warning message+ 3.493 ± 0.05V (Stand-by) / 3.617 ± 0.05V (Talk)

Blinking [Interval : 3min(Stand-by) / 1min(Talk)]

Power Off 3.28 ± 0.05V

LGE Internal Use Only

3. TECHNICAL BRIEF

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3.1 General Description

The MU515 supports UMTS-850, UMTS-1900, GSM-850, GSM-900, DCS-1800, and PCS-1900 based GSM/GPRS/EDGE/UMTS. All receivers and the UMTS transmitter use the radioOne1Zero-IF architecture to eliminate intermediate frequencies, directly converting signals between RF and baseband. The quad-band GSM transmitters use a baseband-to-IF upconversion followed by an offset phase-locked loop that translates the GMSK-modulated or 8-PSK-modulated signal to RF.

A generic, high-level functional block diagram of MU515 is shown in Figure 1-1. One antenna collects base station forward link signals and radiates handset reverse link signals. The antenna connects with receive and transmit paths through a FEM(Front End Module) (plustwo duplexers for UMTS high-band and low-band operations).

QUALCOMM’s branded chipset that implements a Zero-IF radio architecture.

3. TECHNICAL BRIEF

Fig 1.1 Block diagram of RF part

LGE Internal Use Only

Only for training and service purposes

The UMTS receive paths each include an LNA, an RF band-pass filter, and a downconverter that translate the signal directly from RF-to-baseband using radioOne ZIF techniques. The high-band UMTS receive path and low-band path are accommodated in the RFR6275 IC. The RFIC.s Rx analog baseband outputs, for the receive chains, connect to the MSM IC. The UMTS and GSM Rx baseband outputs share the same inputs to the MSM IC (at ADC1).

For the transmit chains, the RTR6275 IC directly translates the Tx baseband signals (from the MSM device) to an RF signal using an internal LO generated by integrated on-chip PLL and VCO. The RTR6275 IC outputs deliver fairly high-level RF signals that are first filtered by Tx SAWs and then amplified by their respective UMTS PAs. The high- and low-band UMTS RF transmit signals emerge from the RTR6275 transceiver.

In the GSM receive path, the received RF signals are applied through their band-pass filters and down-converted directly to baseband in the RTR6275 transceiver IC. These baseband outputs are shared with the UMTS receiver and routed to the MSM IC for further signal processing. The RFR6275 GSM/UMTS IC receiver baseband outputs share the same interface to the MSM IC input ADC as the RTR6275 IC baseband outputs.

The GSM/EDGE transmit path employs one stage of up-conversion and, in order to improve efficiency, is divided into phase and amplitude components to produce an open-loop Polar topology:

1. The on-chip quadrature up-converter translates the GMSK-modulated signal or 8-PSK modulated signal, to a constant envelope phase signal at RF;

2. The amplitude-modulated (AM) component is applied to the ramping control pin of Polar power amplifier from a DAC within the MSM

MU515 power supply voltages are managed and regulated by the PM6650 Power Management IC. This versatile device integrates all wireless handset power management, general housekeeping, and user interface support functions into a single mixed signal IC. It monitors and controls the external power source and coordinates battery recharging while maintaining the handset supply voltages using low dropout, programmable regulators.

The device’s general housekeeping functions include an ADC and analog multiplexer circuit for monitoring on-chip voltage sources, charging status, and current flow, as well as user-defined off-chip variables such as temperature, RF output power, and battery ID. Various oscillator, clock, and counter circuits support IC and higher-level handset functions. Key parameters such as under-voltage lockout and crystal oscillator signal presence are monitored to protect against detrimental conditions.

3. TECHNICAL BRIEF

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LGE Internal Use Only

3. TECHNICAL BRIEF

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3.2 GSM Mode

3.2.1 GSM Receiver

The Dual-mode MU515’s receiver functions are split between the three RFICs as follows:

• UMTS-850,1900 operation uses the RFR6275 Receiver ICs to implement the receive signal path, accepting an RF input and delivering analog baseband outputs (I and Q).

• GSM-850, GSM-900, DCS-1800, and PCS-1900 modes both use the RTR6275 IC only. Each mode has independent front-end circuits and down-converters, but they share common baseband circuits (with only one mode active at a time). All receiver control functions are beginning with SBI2-controlled parameters.

RF Front end consists of antenna, antenna switch module(DGM099M01) which includes four RX saw filters(GSM850, GSM900, GSM900, DCS and PCS). The antenna switch module allows multiple operating bands and modes to share the same antenna. In MU515, a common antenna connects to one of eight paths: 1) UMTS-850 Rx/Tx, 2) UMTS-1900 Rx/Tx, 3) GSM-850 Rx, 4) GSM-900 Rx, 5) GSM-850 GSM-900 Tx, (Low Band Tx’s share the same path) 6) DCS-1800 Rx, and 7) DCS1800,PCS-1900 Tx(High Band Tx’s share the same path), 8) PCS-1900 Rx. UMTS operation requires simultaneous reception and transmission, so the UMTS Rx/Tx connection is routed to a duplexer that separates receive and transmit signals. GSM850/GSM900, DCS, and PCS operation is time division duplexed, so only the receiver or transmitter is active at any time and a frequency duplexer is not required.

The RFIC operating modes and circuit parameters are MSM-controlled through the proprietary 3-line Serial Bus Interface (SBI). The Application Programming Interface (API) is used to implement SBI commands. The API is documented in AMSS Software-please see applicable AMSS Software documentation for details.

ANT_SEL0 ANT_SEL1 ANT_SEL2

GSM900/GSM850 TX HIGH LOW HIGH

DCS/PCS TX LOW HIGH HIGH GSM 850 RX LOW LOW LOW GSM 900 RX HIGH LOW LOW

DCS RX HIGH HIGH LOW PCS RX LOW HIGH LOW

UMTS 850 LOW HIGH HIGH

UMTS 1900 LOW LOW HIGH

ANTENNA SWITCH MODULE LOGIC

Table 1.1 Antenna Switch Module Control logic

DGM099M01

LGE Internal Use Only

Only for training and service purposes

The GSM850, GSM900, DCS, and PCS receiver inputs of RTR6275 are connected directly to the transceiver front-end circuits(filters and antenna switch module). GSM850, GSM900, DCS, and PCS receiver inputs are similar to the RFR6275 UMTS Rx input in that they also use differential configurations to improve common-mode rejection and second-order nonlinearity performance. The balance between the complementary signals is critical and must be maintained from the RF filter outputs all the way into the IC pins

Since GSM850, GSM900, DCS, and PCS signals are time-division duplex (the handset can only receive or transmit at one time), switches are used to separate Rx and Tx signals in place of frequency duplexers - this is accomplished in the switch module.

The GSM850, GSM900, DCS, and PCS receive signals are routed to the RTR6275 through band selection filters and matching networks that transform single-ended 50-Ωsources to differential impedances optimized for gain and noise figure. Similar to the RFR, the RTR input uses a differential configuration to improve second-order inter-modulation and common mode rejection performance. The RTR6275 input stages include MSM-controlled gain

The amplifier outputs drive the RF ports of the quadrature RF-to-baseband downconverters. The downconverted baseband outputs are multiplexed and routed to lowpass filters (one I and one Q) having passband and stopband characteristics suitable for GMSK or 8-PSK processing.

These filter circuits include DC offset corrections. The filter outputs are buffered and passed on to the MSM6260 IC for further processing (an interface shared with the RFR6275 UMTS receiver outputs.

3. TECHNICAL BRIEF

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LGE Internal Use Only

3. TECHNICAL BRIEF

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RTR6275 RX feature

LGE Internal Use Only

Only for training and service purposes

3.2.2 GSM Transmitter out put

The RTR6275 transmitter outputs(DA_HB2_OUT and DA_LB1_OUT)include on-chip output matching inductors. 50ohm output impedance is achieved by adding a series capacitor at the output pins. The capacitor value may be optimized for specific applictions and PCB characteristics based on pass-band symmetry about the band center frequency, the suggested starting value is shown in Figure1.2.

The RTR6275 IC is able to support GSM 850/1900 and GSM 1800/1900 mode transmitting. This design guideline shows a quad-band GSM application.

Both high-band and low band outputs are followed by resistive pads to ensure that the load Presented to the outputs remains close to 50ohm. The low-band GSM. Tx path also includes a Tx-band SAW filter to remove noise-spurious components and noise that would be amplified by the PA and appear in the GSM Rx band.

3. TECHNICAL BRIEF

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Figure 1.2.2-1 GSM Transmitter matching

LGE Internal Use Only

3. TECHNICAL BRIEF

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3.3 UMTS Mode

3.3.1 Receiver

The UMTS duplexer receiver output is routed to LNA circuits within the RFR6275 device.

UMTS LNA circuits(one for low-band UMTS and one for high-band UMTS path) separated from all other receive functions contained within the RFR6275 reveiver IC to improve mixer LO to RF isolation- a critical parameter in the ZIF architecture. Isolation is further improved using high-reverse isolation circuits in the LNA designs. The LNA gains are stepped via API control. The IC operating mode and LNA bias currents are automatically adjusted via software to minimize DC power consumption.

Figure 1.3.1-1 RFR6275 IC functional block diagram

LGE Internal Use Only

Only for training and service purposes

Separate GPS and UMTS down-converters exist within the RFR6275 to allow GPS signals to be processed independently of UMTS signals. The inputs use differential configurations to improve second-order intermodulation and common-mode rejection performance. The differential input gain stage implements MSM IC-controlled gain adjustments to extend receiver dynamic range. The outputs of the differential amplifiers drive the RF port of the quadrature RF-tobaseband downconverters. The down-converters are routed to low-pass filters (one I and one Q) whose pass-band and stop-band characteristics supplement MSM device processing. These filter circuits allow for DC offset correction and the differential I/Q outputs are buffered to interface with the MSM IC. . Numerous secondary functions also are integrated on-chip: the Rx LO generation and distribution circuits and various interface, control, and status circuits. An on-chip UMTS VCO is phase locked to the external VC-TCXO signal and processed, by the LO generation and distribution circuits, to create the UMTS Rx LO signals for the quadrature down-converter. A second on-chip GPS VCO is also phaselocked to the VC-TCXO signal to generate the LO signals for the GPS down-converter. The LO signals, applied to their respective mixer, are at frequencies different to that of the VCOs, which is an important consideration for ZIF processing. The QUALCOMM MSM device provides status and control signaling, employing power reduction features (such as selective circuit power-down, gain control, and bias control) to extend handset standby time.

3.3.2 Transmitter

The UMTS Tx path begins with differential baseband signals (I and Q) from the MSM device. mixers. The up-converter output is amplified by multiple variable gain stages that provide transmit AGC control. The AGC output is filtered and applied to the driver amplifier; this output stage includes an integrated matching inductor that simplifies the external matching network to a single series capacitor to achieve the desired 50-Ωinterface.

The RTR6275 UMTS output is routed to its power amplifier through a bandpass filter, and delivers fairly high-level signals that are filtered and applied to the PA. Transmit power is delivered from the duplexer to the antenna through the switch module.

The transceiver LO synthesizer is contained within the RTR6275 IC with the exception of the off-chip loop filter components and the VC-TCXO. This provides a simplified design for multimode applications. The PLL circuits include a reference divider, phase detector, charge pump, feedback divider, and digital logic generator.

UMTS Tx. Using only PLL1, the LO generation and distribution circuits create the necessary LO signals for nine different frequency converters. the UMTS transmitter also employs the ZIF architecture to translate the signal directly from baseband to RF. This requires FLOto equal FRF, and the RTR6275 IC design achieves this without allowing F

VCO

to equal FRF.

The RTR6275 IC is able to support UMTS 2100/1900 and UMTS 850 mode transmitting. This design guideline shows only UMTS 2100/1900 and UMTS 850 applications.

3. TECHNICAL BRIEF

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LGE Internal Use Only

3. TECHNICAL BRIEF

- 21 -

RTR6275 IC functional block diagram

LGE Internal Use Only

Only for training and service purposes

3.4 LO Phase-locked Loop

All LO functions are fully integrated on-chip and do not require user any adjustment. QUALCOMM has established and implemented frequency plans and LO generation schemes that support the radioOne Platform B-series chipset. Only one area requires handset designer attention: the loop filters relating to each PLL. These are addressed in this chapter. All the UMTS Rx, GSM Rx, and GPS PLL circuits are included within the RFICs: reference dividers, phase detectors, charge pumps, feedback dividers, and digital logic. There are four integrated VCOs and PLLs within the Platform B (RFCMOS) chipset as shown in Figure 5-1 and Figure 5-2:

■ Figure 5-1

1. PLL1, within the RTR6275 IC, produces the LO for up- and down-conversion of GSM Tx/Rx, and UMTS Tx.

2. PLL2, within RTR6275 IC, produces the Rx LO for one of the (high band) UMTS receive Paths.

■ Figure 5-2

3. PLL3, within the RFR6275 IC, produces the Rx LO for the remaining UMTS receive paths.

4. PLL4, within the RFR6275 IC, produces the Rx LO for the GPS receive path.

Within the RFICs, a buffered 19.2 MHz TCXO signal provides the synthesizer input (REF), the frequency reference to which the PLL is phase- and frequency-locked. Thereference is divided by the R-Counters to create a fixed frequency input to the phase detector, FR. The other phase detector input (FV) varies as the loop acquires lock, and is generated by dividing the VCO frequency using the feedback path N-Counter. The closed loop will force FV to equal FR when locked. If the loop is not locked, the error between FV and FR will create an error signal at the output of the charge pump. This error signal is filtered by the loop filter components and applied to the VCO, tuning the output frequency so that the error is decreased. Ultimately, the loop forces the error to approach zero and the PLL is phase- and frequency-locked.

3. TECHNICAL BRIEF

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RFR6275 PLLs functional block diagram

Figure 5-1 Figure 5-2

LGE Internal Use Only

3. TECHNICAL BRIEF

- 23 -

3.4.1 UMTS Rx PLL (PLL3)

QUALCOMM provides a baseline PLL3 design for UMTS Rx. Loop filter component reference designators are shown in Figure 5-2.

Table_ Baseline PLL3 design for UMTS Rx

Notes: 1. The performance values listed in this table are based on simulation results and are provided

as a starting point for handset designers. Synthesizer performance is still being evaluated and optimized during this document release. Loop parameter, settling time, and filter component values are all expected to change when the optimization effort is completed. Future revisions will include expected performance based on measured data.

2. For MU515 C1_2.2nF C2_150pF R1_10k

3. Loop parameter acronyms are: Kvco VCO tuning sensitivity CP_I Charge pump current (controlled by API software) PM Phase margin L_BW Loop bandwidth

4. The listed VCO tuning sensitivity is based on QUALCOMM internal Rx VCO.

5. The listed settling times are for switching between channels at opposite ends of the active band and settling to within 250 Hz of the final frequency.

6. Test and evaluation efforts were ongoing at the time of this document release. Check future versions for design recommendations based on our test results.

3.4.2 Transceiver PLL (PLL1)

The PLL1 within the RTR6275 IC creates the Rx LO for all the GSM receive bands and GSM transmit bands as well as the UMTS transmit bands. The PLL1 of RTR6275 IC (with on-chip VCO) creates the transceiver LO that supports the quad-band GSM receivers and the GSM transmitters as well as the tri-band UMTS transmit outputs. All LO functional blocks are integrated into the RTR6275 IC except for some loop filter capacitors (Figure 5-1). On-chip circuits include reference divider, phase detector, charge pump, VCO, feedback divider, and digital logic status. The off-chip loop filter capacitors allow minimal optimization of PLL performance characteristics (stability, transitory response, settling time, and phase noise) for different applications.

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3.5 Off-chip RF Components

3.5.1 Antenna switch module

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LGE Internal Use Only

3. TECHNICAL BRIEF

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3.5.2 UMTS duplexer

A UMTS duplexer splits a single operating band into receive and transmit paths. Important performance requirements include;

■ Insertion loss . this component is also in the receive and transmit paths ; In the MU515 typical losses : UMTS1900_ Tx = 2.1 dB, UMTS1900_ Rx = 2.8 dB and UMTS850_ Tx =1.9 dB, UMTS850_ Rx =

2.7 dB

■ Out-of-band rejection or attenuation . the duplexer provides input selectivity for the receiver, output filtering for the transmitter, and isolation between the two. Rejection levels for both paths are specified over a number of frequency ranges. Two Tx-to-Rx isolation levels are critical to receiver performance:

■ Rx-band isolation . the transmitter is specified for out-of-band noise falling into the Rx band. This noise leaks from the transmit path into the receive path, and must be limited to avoid degrading receiver sensitivity. The required Rx-band isolation depends on the PA out of-band noise levels and Rx-band losses between the PA and LNA. Minimum duplexer Rx band isolation value is about 45 dB.

■ Tx-band isolation . the transmit channel power also leaks into the receiver. In this case, the leakage is outside the receiver passband but at a relatively high level. It combines with Rx band jammers to create cross-modulation products that fall in-band to desensitize the receiver. The required Tx-band isolation depends on the PA channel power and Tx-band losses between the PA and LNA. Minimum duplexer Tx-band isolation value is about 55 dB.

■ Passband ripple . the loss of this fairly narrowband device is not flat across its passband. Passband ripple increases the receive or transmit insertion loss at specific frequencies, creating performance variations across the band.s channels, and should be controlled.

■ Return loss . minimize mismatch losses with typical return losses of 10 dB or more (VSWR <2:1).

■ Power handling . high power levels in the transmit path must be accommodated without degraded

performance. The specified level depends on the operating band class and mobile station class (per the applicable standard), as well as circuit losses and antenna EIRP. Several duplexer characteristics depend upon its source and load impedances. QUALCOMM strongly recommends an isolator be used between the UMTS PA and duplexer to assure proper performance.

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3.5.3 UMTS Power Amplifier

UMTS850/UMTS1900 Power Amplifier module.

The AWT6321 addresses the demand for increased integration in dual-band handsets for North American CDMA network deployments. The small footprint 3 mm x 5 mm x 1 mm surface mount RoHS compliant package contains independent RF PA paths to ensure optimal performance in both frequency bands, while achieving a 25% PCB space savings compared with solutions requiring two single-band PAs. The package pinout was chosen to enable handset manufacturers to easily route VCC to both power amplifiers and simplify control with a common VMODE pin. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The AWT6321 is part of ANADIGICS’ High- Efficiency-at-LowPower (HELPTM) family of CDMA power amplifiers, which deliver low quiescent currents and significantly greater efficiency without a costly external DAC or DC-DC converter.

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Block Diagram

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Electrical specifications-Cellular Band

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Electrical specifications - PCS Band

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3.5.4 Thermistor

This thermistor senses temperature variations around UMTS PA to adjust PA gain deviation for assure compliance with the applicable transmit power control standards. Negative temperature compensation thermistor is used in the MU515.

3.5.5 GSM/GPRS/EDGE Power amplifier

Product Description

The TQM7M5003 is a small (7x7mm), GSM/EDGE PAM for handset applications. This module has been optimized for excellent EDGE efficiency, ACPR and EVM in an open loop polar modulation environment at EDGE class E2+ operation while maintaining high GSM/GPRS efficiency. The TQM7M5003 is fan-out compatible with TriQuint’s other power amplifier modules.

GSM PA functional block diagram

Operating Parameter

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3. TECHNICAL BRIEF

3.5.6 UMTS Rx RF filter

Filter1 869 ~ 894MHz Filter2 1805 ~1880MHz

An RF filter is located between the UMTS LNA and mixer. Insertion loss is important, but not as critical as losses before the LNA. The most important parameters of this component include:

■ Out-of-band rejection or attenuation levels, usually specified to meet these conditions:

❑ Far out-of-band signals - ranging from DC up to the first band of particular concern and from the

last band of particular concern to beyond three times the highest passband frequency.

❑ Tx-band leakage - the transmitter channel power, although attenuated by the duplexer, still

presents a cross-modulation threat in combination with Rx-band jammers. The RF filter must provide rejection of this Tx-band leakage.

❑ Other frequencies of particular concern . bands known to include other wireless transmitters that

may deliver significant power levels to the receiver input.

■ Phase and amplitude balance - the ZIF architecture requires well-balanced differential inputs to the RFR6202 IC. This is accomplished by the RF filter which takes a single-ended output from the RFL6202 IC and provides differential outputs having nominal 180° phase separation. Phase and/or amplitude imbalance causes degraded common-mode rejection and second-order nonlinearity, so their requirements are specified jointly.

❑ ±3 degrees and ± 1 dB ❑ -12 to + 3 degrees and ± 0.7 dB

Of course, passband ripple and return loss are still important in all cases for the same reasons explained in the antenna switch module and duplexer sections.

3.5.7 VCTCXO

The Voltage Controlled Temperature Compensated Crystal Oscillator (VCTCXO) provides the reference frequency for all RFIC synthesizers as well as clock generation functions within the MSM6260 IC. The oscillator frequency is controlled by the MSM6260’s TRK_LO_ADJ pulse density modulated signal in the same manner as the transmit gain control.

The filtered PDM signal results in an analog control signal into the VCTCXO tuning port whose voltage is directly proportional to the density of the digital bit stream. The MSM device varies the pulse density to change the analog control voltage that sets the oscillator frequency - all within a feedback control loop that minimizes handset frequency drift relative to the network.

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3. TECHNICAL BRIEF

3.5.8 Bluetooth

The MSM6260 includes BT baseband embedded BT 1.1 compliant baseband core, so the other bluetooth components are an bluetooth RF module and Antenna. Figure1.5.12-1 shows the bluetooth system architecture in the MU515.

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Figure1.5.12-1 Bluetooth system architecture

+ 157 hidden pages

LG MU515 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual