Kenwood BM 366 Schematic

PT23T9014

Feature

 This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.

Transistor

1 - Base

Mechanical Characteristics

 Lead finish:100% matte Sn(Tin)

 Mounting position: Any

 Qualified max reflow temperature:260℃

 Device meets MSL 1 requirements

 Pure tin plating: 7 ~ 17 um

 Pin flatness:≤3mil

Structure

NPN epitaxial planar silicon transistor (Resistor built-in type)

Electrical characteristics per line@25℃( unless otherwise specified)

3 - Collector

2 - Emitter

Symbol Min. Typ. Max. Unit Test Conditions

BV

50 - - V IC=100uA,IE=0

CBO

BV

45 - - V IC=1mA,IB=0

CEO

BV

5 - - V IE=100uA,IC=0

EBO

I

- - 50 nA VCB=50V,IE=0

CBO

I

- - 50 nA VBE=5V,IC=0

EBO

V

- 0.14 0.3 V IC=100mA,IB=5mA

CE(sat)

V

- 0.84 1 V IC=100mA,IB=5mA

BE(sat)

V

0.58 0.63 0.7 V VCE=5V,IC=2mA

BE(on)

hFE 100 280 1000 VCE=5V,IC=1mA

fT 150 270 - MHz VCE=5V,IC=10mA

Cob - 2.20 3.5 pF VCB=10V,f=1MHz,IE=0

Rev.06 1 www.prisemi.com

Transistor PT23T9014

Absolute maximum rating@25℃

Parameter Symbol Ratings Units

Junction Temperature Tj +150 ℃

Storage Temperature T

Collector to Base Voltage V

Collector to Emitter Voltage V

Emitter to Base Voltage V

Collector Current IC 100 mA

Total Power Dissipation PD 450 mW

stg

50 V

CBO

45 V

CEO

5 V

EBO

-55～+150

℃

Characteristics Curve

1000

125℃

1000

V

CE(sat)@IC

=20IB

100

FE

h

75℃

25℃

h

FE@VCE

=5V

100

Saturation Voltage(mV)

125℃

75℃

25℃

10

0.1 0.1 10 100 1 1

1000

Fig 1. Current Gain & Collector Current Fig 2. Saturation Voltage & Collector Current

Collector Current-I

V

CE (sat) @IC

=10IB

(mA)

C

10

10000

Collector Current-IC(mA)

V

BE(sat)@IC

=20IB

10 100

Saturation Voltage(mV)

100

125℃

75℃

25℃

1000

Saturation Voltage(mV)

75℃

25℃

125℃

10 100

0.1 0.1 10 100 1 1

Fig 3. Saturation Voltage & Collector Current Fig 4. Saturation Voltage & Collector Current

Collector Current-I

(mA)

C

Collector Current-IC(mA)

10 100

Rev.06 2 www.prisemi.com