Kenwood BM 366 Schematic
HI-SINCERITY
MICROELECTRONICS CORP.
HLB120A
NPN Triple Diffused Planar Type High Voltage Transistors
Description
The HLB120A is a medium power transistor designed for use in switching
applications.
Features
• High Breakdown Voltage
• Low Collector Saturation Voltage
• Fast Switchin g Speed
Absolute Maximum Ratings
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2005.02.05
Page No. : 1/4
TO-92
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction T e mperature................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (T
Total Power Dissipation (T
• Maximum Voltages and Currents (T
Collector to Base Voltage......................................................................................................................... 600 V
V
CBO
V
Collector to Emitter Voltage...................................................................................................................... 400 V
CEO
Emitter to Base Voltage................................................................................................................................ 6 V
V
EBO
I
Collector Current (DC) ............................................................................................................................... 100 mA
C
I
Collector Current (Pulse)............................................................................................................................ 200 mA
C
I
Base Current (DC)........................................................................................................................................ 20 mA
B
I
Base Current (Pulse).................................................................................................................................... 40 mA
B
Electrical Characteristics (T
=25°C)............................................................................................................... 625 mW
A
=25°C)...................................................................................................................... 7 W
C
=25°C)
A
=25°C)
A
Symbol Min. Typ. Max Unit Test Conditions
BV
BV
BV
*V
*V
*V
CBO
CEO
EBO
I
CBO
I
CEO
I
EBO
CE(sat)1
CE(sat)2
BE(sat)
*h
FE1
*h
FE2
600 - - V IC=100uA, IE=0
400 - - V IC=10mA, IB=0
6--VI
=10uA, IC=0
E
- - 10 uA VCB=550V
- - 10 uA VCE=400V, IB=0
- - 10 uA VEB=6V, IC=0
- - 400 mV IC=50mA, IB=10mA
- - 750 mV IC=100mA, IB=20mA
--1VI
8-- V
=50mA, IB=10mA
C
=10V, IC=10mA
CE
10 - 36 VCE=10V, IC=50mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HLB120A HSMC Product Specification
HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2005.02.05
Page No. : 2/4
100
Current Gain & Collector Current
VCE=10V
10
hFE
1
1 10 100 1000
10000
Sat urati on Voltage & Col lector Current
Collector Current (mA)
10000
1000
100
Saturat ion Volt age ( m V)
10
1 10 100 1000
Collector Current (mA)
CE(sat)
V
@ IC=5I
B
Capacitan ce & R everse- Biased Volta ge
10
Saturat ion Voltage & Coll ector Curr ent
1000
BE(sat)
V
Saturat ion Voltag e ( m V)
100
1 10 100 1000
Collector Current (mA)
Switch ing time & Collector Current
10.00
Tstg
1.00
Tf
Ton
0.10
Switching Time (us)...
VCC=125V, IC=5I
0.01
10 100
B
Collector Current (mA)
@ IC=5I
B
Capacitance (Pf )
1
1 10 100
Reverse Biased Voltage ( V)
Cob
Safe Operati ng Area
1
0.1
PT=1ms
PT=100ms
0.01
Collector Current (mA
0.001
1 10 100 1000
PT=1s
Forwar d Voltage ( V)
HLB120A HSMC Product Specification
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