IS61LV3216 |
ISSI® |
32K x 16 LOW VOLTAGE CMOS STATIC RAM
NOVEMBER 1997
FEATURES
•High-speed access time: 10, 12, 15, and 20 ns
•CMOS low power operation
—150 mW (typical) operating
—150 µW (typical) standby
•TTL compatible interface levels
•Single 3.3V ± 10% power supply
•Fully static operation: no clock or refresh required
•Three state outputs
•Industrial temperature available
•Available in 44-pin 400-mil SOJ package and 44-pin TSOP (Type 2)
DESCRIPTION
The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.
When CEis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV3216 is packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type 2).
FUNCTIONAL BLOCK DIAGRAM
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A0-A14 |
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DECODER |
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32K x 16 |
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MEMORY ARRAY |
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VCC |
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GND |
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I/O0-I/O7 |
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I/O |
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Lower Byte |
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COLUMN I/O |
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DATA |
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I/O8-I/O15 |
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CIRCUIT |
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Upper Byte |
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CE |
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OE |
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CONTROL |
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WE |
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CIRCUIT |
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UB |
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LB |
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ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
1 |
Rev. A
04/17/01
IS61LV3216 |
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ISSI® |
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PIN CONFIGURATIONS |
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44-Pin TSOP |
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44-Pin SOJ |
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NC |
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1 |
44 |
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A0 |
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44 |
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A0 |
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43 |
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A1 |
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NC |
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A14 |
2 |
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43 |
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A1 |
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42 |
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A2 |
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A14 |
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A13 |
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42 |
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A2 |
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A12 |
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41 |
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OE |
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A13 |
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A11 |
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40 |
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UB |
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A12 |
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41 |
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OE |
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A11 |
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UB |
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CE |
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LB |
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CE |
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LB |
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I/O0 |
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38 |
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I/O15 |
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I/O0 |
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38 |
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I/O15 |
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I/O1 |
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I/O14 |
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I/O1 |
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I/O14 |
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I/O2 |
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I/O13 |
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I/O2 |
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I/O13 |
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I/O3 |
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I/O12 |
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I/O3 |
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I/O12 |
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10 |
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Vcc |
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34 |
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GND |
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Vcc |
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34 |
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GND |
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11 |
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GND |
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33 |
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Vcc |
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GND |
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33 |
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Vcc |
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12 |
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I/O4 |
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32 |
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I/O11 |
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I/O4 |
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I/O11 |
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13 |
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31 |
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I/O10 |
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I/O5 |
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I/O10 |
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I/O5 |
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I/O6 |
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I/O9 |
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I/O9 |
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I/O6 |
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I/O7 |
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I/O8 |
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I/O8 |
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I/O7 |
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NC |
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28 |
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NC |
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WE |
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WE |
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A10 |
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A3 |
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27 |
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A3 |
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A10 |
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A4 |
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A9 |
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A9 |
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A4 |
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A5 |
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A8 |
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A5 |
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A8 |
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A6 |
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A7 |
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A7 |
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A6 |
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NC |
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NC |
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NC |
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NC |
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PIN DESCRIPTIONS
A0-A14 |
Address Inputs |
I/O0-I/O15 |
Data Inputs/Outputs |
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CE |
Chip Enable Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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LB |
Lower-byte Control (I/O0-I/O7) |
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UB |
Upper-byte Control (I/O8-I/O15) |
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NC |
No Connection |
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Vcc |
Power |
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GND |
Ground |
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TRUTH TABLE
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I/O PIN |
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Mode |
WE |
CE |
OE |
LB |
UB |
I/O0-I/O7 |
I/O8-I/O15 |
Vcc Current |
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Not Selected |
X |
H |
X |
X |
X |
High-Z |
High-Z |
ISB1, ISB2 |
Output Disabled |
H |
L |
H |
X |
X |
High-Z |
High-Z |
ICC |
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X |
L |
X |
H |
H |
High-Z |
High-Z |
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Read |
H |
L |
L |
L |
H |
DOUT |
High-Z |
ICC |
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H |
L |
L |
H |
L |
High-Z |
DOUT |
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H |
L |
L |
L |
L |
DOUT |
DOUT |
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Write |
L |
L |
X |
L |
H |
DIN |
High-Z |
ICC |
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L |
L |
X |
H |
L |
High-Z |
DIN |
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L |
L |
X |
L |
L |
DIN |
DIN |
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2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
IS61LV3216 |
ISSI® |
ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage with Respect to GND |
–0.5 to +4.6 |
V |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to Vcc + 0.5 |
V |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current (LOW) |
20 |
mA |
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Note:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range |
Ambient Temperature |
VCC |
Commercial |
0°C to +70°C |
3.3V ± 10% |
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Unit |
VOH |
Output HIGH Voltage |
VCC = Min., IOH = –4.0 mA |
2.4 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 8.0 mA |
— |
0.4 |
V |
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VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.3 |
V |
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VIL |
Input LOW Voltage(1) |
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–0.3 |
0.8 |
V |
ILI |
Input Leakage |
GND - VIN - VCC |
–2 |
2 |
µA |
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ILO |
Output Leakage |
GND - VOUT - VCC, Outputs Disabled |
–2 |
2 |
µA |
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Notes:
1. VIL (min.) = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
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-10 ns |
-12 ns |
-15 ns |
-20 ns |
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Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Unit |
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ICC |
Vcc Dynamic Operating |
VCC = Max., |
Com. |
— |
220 |
— |
200 |
— |
180 |
— |
160 |
mA |
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Supply Current |
IOUT = 0 mA, f = fMAX |
Ind. |
— |
— |
— |
230 |
— |
200 |
— |
180 |
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ISB1 |
TTL Standby Current |
VCC = Max., |
Com. |
— |
10 |
— |
10 |
— |
10 |
— |
10 |
mA |
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(TTL Inputs) |
VIN = VIH or VIL |
Ind. |
— |
— |
— |
20 |
— |
20 |
— |
20 |
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CE • VIH , f = 0 |
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ISB2 |
CMOS Standby |
VCC = Max., |
Com. |
— |
5 |
— |
5 |
— |
5 |
— |
5 |
mA |
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Current (CMOS Inputs) |
CE • VCC – 0.2V, |
Ind. |
— |
— |
— |
10 |
— |
10 |
— |
10 |
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VIN • VCC – 0.2V, or |
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VIN - 0.2V, f = 0 |
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Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
3 |
Rev. A
04/17/01