IS62LV256 |
ISSI® |
32K x 8 LOW VOLTAGE STATIC RAM
JANUARY 2000
FEATURES
•Access time: 45, 70 ns
•Low active power: 70 mW
•Low standby power
— 45 µW CMOS standby
•Fully static operation: no clock or refresh required
•TTL compatible inputs and outputs
•Single 3.3V power supply
DESCRIPTION
The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS double-metal technology.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 10 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS62LV256 is pin compatible with other 32K x 8 SRAMs in 300-mil plastic DIP and SOJ, 330-mil plastic SOP, and TSOP (Type I) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A14 |
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256 X 1024 |
DECODER |
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MEMORY ARRAY |
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VCC
GND
I/O
I/O0-I/O7 DATA COLUMN I/O
CIRCUIT
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CE |
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CONTROL |
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OE |
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CIRCUIT |
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WE |
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ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
1 |
Rev. I
01/26/00
IS62LV256 |
ISSI® |
PIN CONFIGURATION
28-Pin DIP, SOJ and SOP
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28 |
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VCC |
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A14 |
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1 |
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A12 |
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27 |
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2 |
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WE |
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A7 |
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26 |
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A13 |
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3 |
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A6 |
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25 |
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A8 |
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4 |
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A5 |
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24 |
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A9 |
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5 |
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A4 |
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23 |
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A11 |
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6 |
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A3 |
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22 |
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7 |
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OE |
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A2 |
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8 |
21 |
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A10 |
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A1 |
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20 |
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9 |
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CE |
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A0 |
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19 |
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I/O7 |
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10 |
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I/O0 |
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18 |
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I/O6 |
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11 |
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I/O1 |
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17 |
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I/O5 |
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12 |
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I/O2 |
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16 |
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I/O4 |
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13 |
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GND |
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15 |
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I/O3 |
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14 |
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PIN DESCRIPTIONS
A0-A14 |
Address Inputs |
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CE |
Chip Enable Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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I/O0-I/O7 |
Input/Output |
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Vcc |
Power |
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GND |
Ground |
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PIN CONFIGURATION
28-Pin TSOP (Type I)
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21 |
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A10 |
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OE |
22 |
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A11 |
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20 |
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CE |
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A9 |
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24 |
19 |
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I/O7 |
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A8 |
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25 |
18 |
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I/O6 |
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A13 |
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26 |
17 |
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I/O5 |
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27 |
16 |
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I/O4 |
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WE |
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VCC |
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28 |
15 |
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I/O3 |
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A14 |
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1 |
14 |
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GND |
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A12 |
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2 |
13 |
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I/O2 |
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A7 |
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3 |
12 |
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I/O1 |
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A6 |
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11 |
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I/O0 |
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4 |
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A5 |
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10 |
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A0 |
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5 |
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A4 |
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6 |
9 |
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A1 |
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A3 |
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7 |
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A2 |
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TRUTH TABLE
Mode |
WE |
CE |
OE |
I/O Operation |
VccCurrent |
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NotSelected |
X |
H |
X |
High-Z |
ISB1, ISB2 |
(Power-down) |
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OutputDisabled |
H |
L |
H |
High-Z |
ICC1, ICC2 |
Read |
H |
L |
L |
DOUT |
ICC1, ICC2 |
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Write |
L |
L |
X |
DIN |
ICC1, ICC2 |
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to +4.6 |
V |
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TBIAS |
Temperature Under Bias |
–55 to +125 |
°C |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
0.5 |
W |
IOUT |
DC Output Current (LOW) |
20 |
mA |
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Notes:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. I
01/26/00
IS62LV256 |
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ISSI® |
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OPERATING RANGE |
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Range |
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Ambient Temperature |
VCC |
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Commercial |
0°C to +70°C |
3.3V ± 5% |
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Industrial |
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–40°C to +85°C |
3.3V ± 5% |
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DC ELECTRICAL CHARACTERISTICS (Over Operating Range) |
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Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Unit |
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VOH |
Output HIGH Voltage |
VCC = Min., IOH = –1.0 mA |
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2.4 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 2.1 mA |
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0.4 |
V |
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VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.3 |
V |
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VIL |
Input LOW Voltage(1) |
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–0.3 |
0.8 |
V |
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ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
Com. |
–2 |
2 |
µA |
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Ind. |
–5 |
5 |
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ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC, Outputs Disabled |
Com. |
–2 |
2 |
µA |
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Ind. |
–5 |
5 |
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Notes:
1.VIL = –3.0V for pulse width less than 10 ns.
2.Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
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-45 ns |
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-70 ns |
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Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Min. |
Max. |
Unit |
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ICC1 |
Vcc Operating |
VCC = Max., CE = VIL |
Com. |
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20 |
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20 |
mA |
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Supply Current |
IOUT = 0 mA, f = 0 |
Ind. |
— |
30 |
— |
30 |
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ICC2 |
Vcc Dynamic Operating |
VCC = Max., CE = VIL |
Com. |
— |
35 |
— |
30 |
mA |
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Supply Current |
IOUT = 0 mA, f = fMAX |
Ind. |
— |
45 |
— |
40 |
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ISB1 |
TTL Standby Current |
VCC = Max., |
Com. |
— |
2 |
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2 |
mA |
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(TTL Inputs) |
VIN = VIH or VIL |
Ind. |
— |
5 |
— |
5 |
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CE ≥ VIH, f = 0 |
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ISB2 |
CMOS Standby |
VCC = Max., |
Com. |
— |
90 |
— |
90 |
µA |
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Current (CMOS Inputs) |
CE ≥ VCC – 0.2V, |
Ind. |
— |
200 |
— |
200 |
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VIN ≥ VCC – 0.2V, or |
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VIN ≤ 0.2V, f = 0 |
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Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
3 |
Rev. I
01/26/00