ISSI IS62LV256-70UI, IS62LV256-70U, IS62LV256-45UI, IS62LV256-45U, IS62LV256-45TI Datasheet

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IS62LV256

ISSI®

32K x 8 LOW VOLTAGE STATIC RAM

JANUARY 2000

FEATURES

Access time: 45, 70 ns

Low active power: 70 mW

Low standby power

— 45 µW CMOS standby

Fully static operation: no clock or refresh required

TTL compatible inputs and outputs

Single 3.3V power supply

DESCRIPTION

The ISSI IS62LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS double-metal technology.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 10 µW (typical) with CMOS input levels.

Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS62LV256 is pin compatible with other 32K x 8 SRAMs in 300-mil plastic DIP and SOJ, 330-mil plastic SOP, and TSOP (Type I) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A14

 

 

256 X 1024

DECODER

 

 

MEMORY ARRAY

 

 

 

 

 

 

 

VCC

GND

I/O

I/O0-I/O7 DATA COLUMN I/O

CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

CIRCUIT

 

 

 

 

 

 

 

 

 

WE

 

 

 

 

 

 

 

 

 

 

 

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. — 1-800-379-4774

1

Rev. I

01/26/00

ISSI IS62LV256-70UI, IS62LV256-70U, IS62LV256-45UI, IS62LV256-45U, IS62LV256-45TI Datasheet

IS62LV256

ISSI®

PIN CONFIGURATION

28-Pin DIP, SOJ and SOP

 

 

 

28

 

VCC

A14

 

1

 

A12

 

27

 

 

 

 

 

 

 

 

2

 

 

WE

 

A7

 

26

 

A13

 

3

 

A6

 

25

 

A8

 

4

 

A5

 

24

 

A9

 

5

 

A4

 

23

 

A11

 

6

 

A3

 

22

 

 

 

 

 

 

 

 

7

 

 

OE

 

A2

 

8

21

 

A10

 

 

A1

 

20

 

 

 

 

 

 

 

 

9

 

 

CE

 

A0

 

19

 

I/O7

 

10

 

I/O0

 

18

 

I/O6

 

11

 

I/O1

 

17

 

I/O5

 

12

 

I/O2

 

16

 

I/O4

 

13

 

GND

 

15

 

I/O3

 

14

 

 

 

 

 

 

 

 

 

 

 

 

PIN DESCRIPTIONS

A0-A14

Address Inputs

 

 

CE

Chip Enable Input

 

 

OE

Output Enable Input

 

 

WE

Write Enable Input

 

 

I/O0-I/O7

Input/Output

 

 

Vcc

Power

 

 

GND

Ground

 

 

PIN CONFIGURATION

28-Pin TSOP (Type I)

 

 

 

 

 

 

21

 

A10

 

OE

22

 

A11

 

23

20

 

 

 

 

 

 

CE

 

 

A9

 

24

19

 

I/O7

 

 

 

 

A8

 

25

18

 

I/O6

 

 

A13

 

26

17

 

I/O5

 

 

 

 

 

 

27

16

 

I/O4

 

WE

 

 

 

VCC

 

28

15

 

I/O3

 

 

A14

 

1

14

 

GND

 

 

A12

 

2

13

 

I/O2

 

 

 

 

A7

 

3

12

 

I/O1

 

 

 

 

A6

 

11

 

I/O0

 

 

 

4

 

 

 

A5

 

10

 

A0

 

 

 

5

 

 

 

A4

 

6

9

 

A1

 

 

 

 

A3

 

7

8

 

A2

 

 

TRUTH TABLE

Mode

WE

CE

OE

I/O Operation

VccCurrent

 

 

 

 

 

 

NotSelected

X

H

X

High-Z

ISB1, ISB2

(Power-down)

 

 

 

 

 

 

 

 

 

 

 

OutputDisabled

H

L

H

High-Z

ICC1, ICC2

Read

H

L

L

DOUT

ICC1, ICC2

 

 

 

 

 

 

Write

L

L

X

DIN

ICC1, ICC2

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.5 to +4.6

V

 

 

 

 

TBIAS

Temperature Under Bias

–55 to +125

°C

 

 

 

 

TSTG

Storage Temperature

–65 to +150

°C

 

 

 

 

PT

Power Dissipation

0.5

W

IOUT

DC Output Current (LOW)

20

mA

 

 

 

 

Notes:

1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. I

01/26/00

IS62LV256

 

 

 

 

 

 

ISSI®

OPERATING RANGE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Range

 

Ambient Temperature

VCC

 

 

 

 

Commercial

0°C to +70°C

3.3V ± 5%

 

 

 

 

 

 

 

 

 

 

 

 

 

Industrial

 

–40°C to +85°C

3.3V ± 5%

 

 

 

 

 

 

 

 

 

 

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Test Conditions

 

Min.

Max.

Unit

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min., IOH = –1.0 mA

 

2.4

V

 

 

 

 

 

 

 

VOL

Output LOW Voltage

VCC = Min., IOL = 2.1 mA

 

0.4

V

 

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

 

 

2.2

VCC + 0.3

V

 

 

 

 

 

 

 

 

 

VIL

Input LOW Voltage(1)

 

 

 

 

–0.3

0.8

V

 

 

 

 

 

 

 

ILI

Input Leakage

GND VIN VCC

Com.

–2

2

µA

 

 

 

 

 

 

Ind.

–5

5

 

ILO

Output Leakage

GND VOUT VCC, Outputs Disabled

Com.

–2

2

µA

 

 

 

 

 

 

Ind.

–5

5

 

Notes:

1.VIL = –3.0V for pulse width less than 10 ns.

2.Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

 

 

 

 

-45 ns

 

-70 ns

 

 

Symbol

Parameter

Test Conditions

 

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

ICC1

Vcc Operating

VCC = Max., CE = VIL

Com.

20

20

mA

 

Supply Current

IOUT = 0 mA, f = 0

Ind.

30

30

 

 

 

 

 

 

 

 

 

 

ICC2

Vcc Dynamic Operating

VCC = Max., CE = VIL

Com.

35

30

mA

 

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

45

40

 

 

 

 

 

 

 

 

 

 

ISB1

TTL Standby Current

VCC = Max.,

Com.

2

2

mA

 

(TTL Inputs)

VIN = VIH or VIL

Ind.

5

5

 

 

 

CE VIH, f = 0

 

 

 

 

 

 

ISB2

CMOS Standby

VCC = Max.,

Com.

90

90

µA

 

Current (CMOS Inputs)

CE VCC – 0.2V,

Ind.

200

200

 

 

 

VIN VCC – 0.2V, or

 

 

 

 

 

 

 

 

VIN 0.2V, f = 0

 

 

 

 

 

 

Notes:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. I

01/26/00

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