ISSI IS62WV12816ALL, IS62WV12816BLL User Manual

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IS62WV12816ALL		ISSI
	IS62WV12816ALL		®
	IS62WV12816BLL

128K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

JUNE 2005

FEATURES

•High-speed access time: 45ns, 55ns, 70ns

•CMOS low power operation

–36 mW (typical) operating

–9 µW (typical) CMOS standby

•TTL compatible interface levels

•Single power supply

–1.65V--2.2V VDD (62WV12816ALL)

–2.5V--3.6V VDD (62WV12816BLL)

•Fully static operation: no clock or refresh required

•Three state outputs

•Data control for upper and lower bytes

•Industrial temperature available

•2CS Option Available

•Lead-free available

DESCRIPTION

The ISSI IS62WV12816ALL/ IS62WV12816BLL are highspeed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.

When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LBand UBare HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

TheIS62WV12816ALLandIS62WV12816BLLarepackaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).

FUNCTIONAL BLOCK DIAGRAM

A0-A16

DECODER

128K x 16

MEMORY ARRAY

VDD

GND

I/O0-I/O7

I/O

Lower Byte

COLUMN I/O

DATA

I/O8-I/O15

CIRCUIT

Upper Byte

CS2

CS1

CONTROL

CIRCUIT

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this speci fication and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

06/08/05

IS62WV12816ALL, IS62WV12816BLL

ISSI®

PIN CONFIGURATIONS

48-Pin mini BGA (6mm x 8mm) (Package Code B)

A	LB	OE	A0	A1	A2	N/C
B	I/O8	UB	A3	A4	CSI	I/O0
C	I/O9	I/O10	A5	A6	I/O1	I/O2
D	GND	I/O11	NC	A7	I/O3	VDD
E	VDD	I/O12	NC	A16	I/O4	GND
F	I/O14	I/O13	A14	A15	I/O5	I/O6
G	I/O15	NC	A12	A13	WE	I/O7
H	NC	A8	A9	A10	A11	NC

48-Pin mini BGA (6mm x 8mm)

2 CS Option (Package Code B2)

A	LB	OE	A0	A1	A2	CS2
B	I/O8	UB	A3	A4	CS1	I/O0
C	I/O9	I/O10	A5	A6	I/O1	I/O2
D	GND	I/O11	NC	A7	I/O3	VDD
E	VDD	I/O12	NC	A16	I/O4	GND
F	I/O14	I/O13	A14	A15	I/O5	I/O6
G	I/O15	NC	A12	A13	WE	I/O7
H	NC	A8	A9	A10	A11	NC

44-Pin mini TSOP (Type II) (Package Code T)

A4	1	44	A5
A3	2	43	A6

A2	3	42	A7

A1	4	41	OE

A0	5	40	UB

CS1	6	39	LB

I/O0	7	38	I/O15

I/O1	8	37	I/O14

I/O2	9	36	I/O13

I/O3	10	35	I/O12

VDD		34	GND
	11
GND		33	VDD
	12
I/O4	13	32	I/O11

I/O5	14	31	I/O10

I/O6	15	30	I/O9

I/O7	16	29	I/O8

WE	17	28	NC

A16	18	27	A8

A15	19	26	A9

A14	20	25	A10

A13	21	24	A11

A12	22	23	NC

PIN DESCRIPTIONS

A0-A16	Address Inputs

I/O0-I/O15	Data Inputs/Outputs

CS1, CS2	Chip Enable Input

OE	Output Enable Input

WE	Write Enable Input

LB	Lower-byte Control (I/O0-I/O7)

UB	Upper-byte Control (I/O8-I/O15)

NC	No Connection

VDD	Power

GND	Ground

2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

06/08/05

IS62WV12816ALL,		IS62WV12816BLL							ISSI®
TRUTH TABLE

							I/O PIN
Mode	WE	CS1	CS2	OE	LB	UB	I/O0-I/O7	I/O8-I/O15	VDD Current

Not Selected	X	H	X	X	X	X	High-Z	High-Z	ISB1, ISB2
	X	X	L	X	X	X	High-Z	High-Z	ISB1, ISB2
	X	X	X	X	H	H	High-Z	High-Z	ISB1, ISB2

Output Disabled	H	L	H	H	L	X	High-Z	High-Z	ICC
	H	L	H	H	X	L	High-Z	High-Z	ICC

Read	H	L	H	L	L	H	DOUT	High-Z	ICC
	H	L	H	L	H	L	High-Z	DOUT
	H	L	H	L	L	L	DOUT	DOUT

Write	L	L	H	X	L	H	DIN	High-Z	ICC
	L	L	H	X	H	L	High-Z	DIN
	L	L	H	X	L	L	DIN	DIN

ABSOLUTE MAXIMUM RATINGS(1)

Symbol	Parameter	Value	Unit
VTERM	Terminal Voltage with Respect to GND	–0.2 to VDD+0.3	V

TSTG	Storage Temperature	–65 to +150	°C

PT	Power Dissipation	1.0	W

Note:

1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

OPERATING RANGE (VDD)

Range	Ambient Temperature	IS62WV12816ALL	IS62WV12816BLL
Commercial	0°C to +70°C	1.65V - 2.2V	2.5V - 3.6V

Industrial	–40°C to +85°C	1.65V - 2.2V	2.5V - 3.6V

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

06/08/05

IS62WV12816ALL, IS62WV12816BLL					ISSI®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol	Parameter	Test Conditions	VDD	Min.	Max.	Unit

VOH	Output HIGH Voltage	IOH = -0.1 mA	1.65-2.2V	1.4	—	V
		IOH = -1 mA	2.5-3.6V	2.2	—	V

VOL	Output LOW Voltage	IOL = 0.1 mA	1.65-2.2V	—	0.2	V
		IOL = 2.1 mA	2.5-3.6V	—	0.4	V

VIH	Input HIGH Voltage		1.65-2.2V	1.4	VDD + 0.2	V
			2.5-3.6V	2.2	VDD + 0.3	V

VIL(1)	Input LOW Voltage		1.65-2.2V	–0.2	0.4	V
			2.5-3.6V	–0.2	0.6	V

ILI	Input Leakage	GND ≤ VIN ≤ VDD		–1	1	µA
ILO	Output Leakage	GND ≤ VOUT ≤ VDD, Outputs Disabled		–1	1	µA

Notes:

1. VIL (min.) = –1.0V for pulse width less than 10 ns.

CAPACITANCE(1)

Symbol	Parameter	Conditions	Max.	Unit
CIN	Input Capacitance	VIN = 0V	8	pF

COUT	Input/Output Capacitance	VOUT = 0V	10	pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

06/08/05

IS62WV12816ALL,		IS62WV12816BLL			ISSI®
IS62WV12816ALL, POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol	Parameter	TestConditions		Max.	Unit
				70
ICC	VDDDynamicOperating	VDD=Max.,	Com.	15	mA
	SupplyCurrent	IOUT =0mA,f=fMAX	Ind.	20
ICC1	OperatingSupply	VDD=Max.,	Com.	3	mA
	Current	IOUT = 0 mA, f = 0	Ind.	3
ISB1	TTLStandbyCurrent	VDD=Max.,	Com.	0.3	mA
	(TTLInputs)	VIN =VIH orVIL	Ind.	0.3
		CS1=VIH ,CS2=VIL,
		f = 1 MHZ	OR
	ULB Control	VDD =Max.,VIN =VIH orVIL
		CS1=VIL, f = 0,UB=VIH, LB=VIH
ISB2	CMOSStandby	VDD=Max.,	Com.	5	µA
	Current(CMOSInputs)	CS1≥ VDD –0.2V,	Ind.	10
		CS2 ≤ 0.2V,
		VIN ≥ VDD –0.2V,or
		VIN ≤ 0.2V, f = 0	OR
	ULB Control	VDD = Max., CS1 = VIL, CS2=VIH
		VIN ≤ 0.2V,f=0; UB/ LB=VDD –0.2V

IS62WV12816BLL, POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol	Parameter	TestConditions		Max.	Max.	Unit
				45	55
ICC	VDDDynamicOperating	VDD=Max.,	Com.	35	25	mA
	SupplyCurrent	IOUT =0mA,f=fMAX	Ind.	40	30
			typ.(2)	25	20
ICC1	OperatingSupply	VDD=Max.,	Com.	3	3	mA
	Current	IOUT = 0 mA, f = 0	Ind.	3	3

ISB1	TTLStandbyCurrent	VDD=Max.,	Com.	0.3	0.3	mA
	(TTLInputs)	VIN =VIH orVIL	Ind.	0.3	0.3
		CS1=VIH ,CS2=VIL,
		f = 1 MHZ	OR
	ULB Control	VDD =Max.,VIN =VIH orVIL
		CS1=VIL, f = 0,UB=VIH, LB=VIH
ISB2	CMOSStandby	VDD=Max.,	Com.	10	10	µA
	Current(CMOSInputs)	CS1≥ VDD –0.2V,	Ind.	10	10
		CS2 ≤ 0.2V,	typ.(2)	3	3
		VIN ≥ VDD –0.2V,or
		VIN ≤ 0.2V, f = 0	OR
	ULB Control	VDD = Max., CS1 = VIL, CS2=VIH
		VIN ≤ 0.2V,f=0; UB/ LB=VDD –0.2V

Note:

1.At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2.Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

06/08/05

IS62WV12816ALL,		IS62WV12816BLL	ISSI®
AC TEST CONDITIONS

Parameter		62WV12816ALL	62WV12816BLL
		(Unit)	(Unit)
Input Pulse Level		0.4V to VDD-0.2V	0.4V to VDD-0.3V

Input Rise and Fall Times		5 ns	5ns

Input and Output Timing		VREF	VREF
and Reference Level

Output Load		See Figures 1 and 2	See Figures 1 and 2


	1.65-2.2V	2.5V - 3.6V

R1(Ω)	3070	3070

R2(Ω)	3150	3150

VREF	0.9V	1.5V

VTM	1.8V	2.8V

AC TEST LOADS

	R1		R1
VTM		VTM
OUTPUT		OUTPUT
30 pF	R2	5 pF	R2
Including		Including
jig and		jig and
scope		scope
Figure 1		Figure 2

6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

06/08/05

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