IS62LV12816BLL |
ISSI® |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEBRUARY 2001
FEATURES
•High-speed access time: 55, 70, 100 ns
•CMOS low power operation
–120 mW (typical) operating
–6 µW (typical) CMOS standby
•TTL compatible interface levels
•Single 2.7V-3.45V VCC power supply
•Fully static operation: no clock or refresh required
•Three state outputs
•Data control for upper and lower bytes
•Industrial temperature available
•Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm)
DESCRIPTION
The ISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovativecircuitdesigntechniques,yieldshigh-performance and low power consumption devices.
When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62LV12816BLL is packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
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A0-A16 |
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DECODER |
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128K x 16 |
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MEMORY ARRAY |
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VCC |
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GND |
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I/O0-I/O7 |
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I/O |
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Lower Byte |
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COLUMN I/O |
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DATA |
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I/O8-I/O15 |
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CIRCUIT |
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Upper Byte |
CE |
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OE |
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CONTROL |
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WE |
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CIRCUIT |
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UB |
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LB |
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ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
1 |
Rev. B
03/07/01
IS62LV12816BLL |
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ISSI® |
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PIN CONFIGURATIONS |
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44-Pin TSOP (Type II) |
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48-Pin mini BGA |
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1 |
2 |
3 |
4 |
5 |
6 |
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A4 |
1 |
44 |
A5 |
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A3 |
2 |
43 |
A6 |
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A2 |
3 |
42 |
A7 |
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A1 |
4 |
41 |
OE |
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A0 |
5 |
40 |
UB |
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CE |
6 |
39 |
LB |
A |
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A0 |
A1 |
A2 |
N/C |
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I/O0 |
7 |
38 |
I/O15 |
LB |
OE |
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I/O1 |
8 |
37 |
I/O14 |
B |
I/O8 |
UB |
A3 |
A4 |
CE |
I/O0 |
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I/O2 |
9 |
36 |
I/O13 |
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I/O3 |
10 |
35 |
I/O12 |
C |
I/O9 |
I/O10 |
A5 |
A6 |
I/O1 |
I/O2 |
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Vcc |
11 |
34 |
GND |
D |
GND |
I/O11 |
NC |
A7 |
I/O3 |
Vcc |
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GND |
12 |
33 |
Vcc |
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I/O4 |
13 |
32 |
I/O11 |
E |
Vcc |
I/O12 |
NC |
A16 |
I/O4 |
GND |
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I/O5 |
14 |
31 |
I/O10 |
F |
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I/O6 |
15 |
30 |
I/O9 |
I/O14 |
I/O13 |
A14 |
A15 |
I/O5 |
I/O6 |
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I/O7 |
16 |
29 |
I/O8 |
G |
I/O15 |
NC |
A12 |
A13 |
WE |
I/O7 |
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WE |
17 |
28 |
NC |
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A16 |
18 |
27 |
A8 |
H |
NC |
A8 |
A9 |
A10 |
A11 |
NC |
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A15 |
19 |
26 |
A9 |
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A14 |
20 |
25 |
A10 |
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A13 |
21 |
24 |
A11 |
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A12 |
22 |
23 |
NC |
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PIN DESCRIPTIONS
A0-A16 |
Address Inputs |
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I/O0-I/O15 |
Data Inputs/Outputs |
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CE |
Chip Enable Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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LB |
Lower-byte Control (I/O0-I/O7) |
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UB |
Upper-byte Control (I/O8-I/O15) |
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NC |
No Connection |
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Vcc |
Power |
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GND |
Ground |
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TRUTH TABLE
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I/O PIN |
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Mode |
WE |
CE |
OE |
LB |
UB |
I/O0-I/O7 |
I/O8-I/O15 |
Vcc Current |
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Not Selected |
X |
H |
X |
X |
X |
High-Z |
High-Z |
ISB1, ISB2 |
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X |
L |
X |
H |
H |
High-Z |
High-Z |
ISB1, ISB2 |
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Output Disabled |
H |
L |
H |
X |
X |
High-Z |
High-Z |
ICC |
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X |
L |
X |
H |
H |
High-Z |
High-Z |
ISB |
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Read |
H |
L |
L |
L |
H |
DOUT |
High-Z |
ICC |
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H |
L |
L |
H |
L |
High-Z |
DOUT |
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H |
L |
L |
L |
L |
DOUT |
DOUT |
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Write |
L |
L |
X |
L |
H |
DIN |
High-Z |
ICC |
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L |
L |
X |
H |
L |
High-Z |
DIN |
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L |
L |
X |
L |
L |
DIN |
DIN |
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2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
03/07/01
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IS62LV12816BLL |
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ISSI® |
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OPERATING RANGE |
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Range |
Ambient Temperature |
VCC |
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Commercial |
0°C to +70°C |
2.7V - 3.45V |
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Industrial |
–40°C to +85°C |
2.7V - 3.45V |
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
–0.5 to Vcc+0.5 |
V |
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TBIAS |
Temperature Under Bias |
–40 to +85 |
°C |
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VCC |
Vcc Related to GND |
–0.3 to +3.6 |
V |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1.0 |
W |
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Note:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Unit |
VOH |
Output HIGH Voltage |
VCC = Min., IOH = –1 mA |
2.0 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 2.1 mA |
— |
0.4 |
V |
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VIH |
Input HIGH Voltage |
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2.2 |
VCC + 0.2 |
V |
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VIL(1) |
Input LOW Voltage |
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–0.2 |
0.4 |
V |
ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
–1 |
1 |
µA |
ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC, Outputs Disabled |
–1 |
1 |
µA |
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
CAPACITANCE(1)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
CIN |
Input Capacitance |
VIN = 0V |
6 |
pF |
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COUT |
Input/Output Capacitance |
VOUT = 0V |
8 |
pF |
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Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
3 |
Rev. B
03/07/01