IS61LV25616 |
ISSI® |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
AUGUST 2000
FEATURES
•High-speed access time:
—7, 8, 10, 12, and 15 ns
•CMOS low power operation
•Low stand-by power:
—Less than 5 mA (typ.) CMOS stand-by
•TTL compatible interface levels
•Single 3.3V power supply
•Fully static operation: no clock or refresh required
•Three state outputs
•Data control for upper and lower bytes
•Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CEis HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV25616 is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).
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A0-A17 |
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DECODER |
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256K x 16 |
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MEMORY ARRAY |
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VCC |
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GND |
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I/O0-I/O7 |
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I/O |
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Lower Byte |
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COLUMN I/O |
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DATA |
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I/O8-I/O15 |
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CIRCUIT |
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Upper Byte |
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CE |
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OE |
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CONTROL |
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WE |
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CIRCUIT |
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UB |
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LB |
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ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
1 |
Rev. B 09/29/00
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IS61LV25616 |
ISSI® |
PIN CONFIGURATIONS |
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44-Pin TSOP (Type II) and SOJ |
44-Pin LQFP |
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44 |
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A17 |
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A0 |
1 |
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A17 |
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A16 |
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A15 |
A14 |
A13 A12 A11 |
A10 |
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43 |
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A16 |
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OE |
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UB |
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LB |
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A1 |
2 |
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A2 |
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A15 |
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A3 |
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41 |
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OE |
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A4 |
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40 |
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UB |
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44 43 42 41 40 39 38 37 36 35 34 |
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CE |
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LB |
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CE |
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1 |
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33 |
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I/O15 |
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I/O0 |
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I/O15 |
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I/O0 |
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2 |
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32 |
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I/O14 |
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I/O1 |
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8 |
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I/O14 |
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I/O1 |
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3 |
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31 |
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I/O13 |
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I/O2 |
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I/O13 |
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I/O3 |
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I/O12 |
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I/O2 |
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30 |
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I/O12 |
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I/O3 |
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29 |
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GND |
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Vcc |
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11 |
34 |
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GND |
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TOP VIEW |
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Vcc |
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28 |
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Vcc |
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GND |
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Vcc |
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GND |
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27 |
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I/O11 |
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I/O4 |
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I/O11 |
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I/O5 |
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I/O10 |
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I/O4 |
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26 |
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I/O10 |
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I/O6 |
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I/O9 |
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I/O5 |
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25 |
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I/O9 |
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I/O7 |
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I/O8 |
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I/O6 |
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I/O8 |
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17 |
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NC |
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WE |
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I/O7 |
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NC |
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A5 |
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A14 |
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12 13 |
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16 17 18 |
19 20 21 |
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A6 |
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A13 |
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A7 |
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A12 |
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WE |
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A0 |
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A1 |
A2 |
A3 A4 A5 |
A6 |
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A7 |
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A8 |
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A9 |
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A8 |
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A11 |
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A9 |
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A10 |
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48-Pin mini BGA
1 |
2 |
3 |
4 |
5 |
6 |
A |
LB |
OE |
A0 |
A1 |
A2 |
N/C |
B |
I/O8 |
UB |
A3 |
A4 |
CE |
I/O0 |
C |
I/O9 |
I/O10 |
A5 |
A6 |
I/O1 |
I/O2 |
D |
GND |
I/O11 |
A17 |
A7 |
I/O3 |
Vcc |
E |
Vcc |
I/O12 |
NC |
A16 |
I/O4 |
GND |
F |
I/O14 |
I/O13 |
A14 |
A15 |
I/O5 |
I/O6 |
G |
I/O15 |
NC |
A12 |
A13 |
WE |
I/O7 |
H |
NC |
A8 |
A9 |
A10 |
A11 |
NC |
PIN DESCRIPTIONS
A0-A17 |
Address Inputs |
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I/O0-I/O15 |
Data Inputs/Outputs |
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CE |
Chip Enable Input |
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OE |
Output Enable Input |
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WE |
Write Enable Input |
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LB |
Lower-byte Control (I/O0-I/O7) |
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UB |
Upper-byte Control (I/O8-I/O15) |
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NC |
No Connection |
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Vcc |
Power |
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GND |
Ground |
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2 |
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
Rev. B 09/29/00
IS61LV25616 |
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ISSI® |
TRUTH TABLE |
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I/O PIN |
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Mode |
WE |
CE |
OE |
LB |
UB |
I/O0-I/O7 |
I/O8-I/O15 |
Vcc Current |
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Not Selected |
X |
H |
X |
X |
X |
High-Z |
High-Z |
ISB1, ISB2 |
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Output Disabled |
H |
L |
H |
X |
X |
High-Z |
High-Z |
ICC |
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X |
L |
X |
H |
H |
High-Z |
High-Z |
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Read |
H |
L |
L |
L |
H |
DOUT |
High-Z |
ICC |
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H |
L |
L |
H |
L |
High-Z |
DOUT |
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H |
L |
L |
L |
L |
DOUT |
DOUT |
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Write |
L |
L |
X |
L |
H |
DIN |
High-Z |
ICC |
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L |
L |
X |
H |
L |
High-Z |
DIN |
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L |
L |
X |
L |
L |
DIN |
DIN |
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter |
Value |
Unit |
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VTERM |
Terminal Voltage with Respect to GND |
–0.5 to Vcc+0.5 |
V |
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TBIAS |
Temperature Under Bias |
–45 to +90 |
°C |
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VCC |
Vcc Related to GND |
–0.3 to +4.0 |
V |
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TSTG |
Storage Temperature |
–65 to +150 |
°C |
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PT |
Power Dissipation |
1.0 |
W |
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Note:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
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7, 8, 10 ns |
12 ns, 15 ns |
Range |
Ambient Temperature |
VCC |
VCC |
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Commercial |
0°C to +70°C |
3.3V +10%, -5% |
3.3V ± 10% |
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Industrial |
–40°C to +85°C |
3.3V +10%, -5% |
3.3V ± 10% |
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Integrated Silicon Solution, Inc. — 1-800-379-4774 |
3 |
Rev. B 09/29/00
|
IS61LV25616 |
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ISSI® |
|||
DC ELECTRICAL CHARACTERISTICS (Over Operating Range) |
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Symbol |
Parameter |
Test Conditions |
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Min. |
Max. |
Unit |
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VOH |
Output HIGH Voltage |
VCC = Min., IOH = –4.0 mA |
|
2.4 |
— |
V |
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VOL |
Output LOW Voltage |
VCC = Min., IOL = 8.0 mA |
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— |
0.4 |
V |
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VIH |
Input HIGH Voltage |
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2.0 |
VCC + 0.3 |
V |
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VIL |
Input LOW Voltage(1) |
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–0.3 |
0.8 |
V |
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ILI |
Input Leakage |
GND ≤ VIN ≤ VCC |
Com. |
–1 |
1 |
µA |
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Ind. |
–5 |
5 |
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ILO |
Output Leakage |
GND ≤ VOUT ≤ VCC, 4 |
Com. |
–1 |
1 |
µA |
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Outputs Disabled |
Ind. |
–5 |
5 |
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Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
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-7, -8 |
-10 |
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-12 |
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-15 |
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Symbol |
Parameter |
Test Conditions |
|
Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Min. |
Max. |
Unit |
ICC |
Vcc Dynamic Operating |
VCC = Max., |
Com. |
— |
260 |
— |
260 |
— |
240 |
— |
220 |
mA |
|
Supply Current |
IOUT = 0 mA, f = fMAX |
Ind. |
— |
300 |
— |
300 |
— |
280 |
— |
250 |
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ISB |
TTL Standby Current |
VCC = Max., |
Com. |
— |
85 |
— |
85 |
— |
75 |
— |
65 |
mA |
|
(TTL Inputs) |
VIN = VIH or VIL |
Ind. |
— |
95 |
— |
95 |
— |
85 |
— |
75 |
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CE ≥ VIH, f = fMAX. |
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ISB1 |
TTL Standby Current |
VCC = Max., |
Com. |
— |
20 |
— |
20 |
— |
20 |
— |
20 |
mA |
|
(TTL Inputs) |
VIN = VIH or VIL |
Ind. |
— |
25 |
— |
25 |
— |
25 |
— |
25 |
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CE ≥ VIH, f = 0 |
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ISB2 |
CMOS Standby |
VCC = Max., |
Com. |
— |
10 |
— |
10 |
— |
10 |
— |
10 |
mA |
|
Current (CMOS Inputs) |
CE ≥ VCC – 0.2V, |
Ind. |
— |
15 |
— |
15 |
— |
15 |
— |
15 |
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VIN ≥ VCC – 0.2V, or |
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VIN ≤ 0.2V, f = 0 |
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Note: |
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1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. |
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Shaded area product in development |
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CAPACITANCE(1)
Symbol |
Parameter |
Conditions |
Max. |
Unit |
CIN |
Input Capacitance |
VIN = 0V |
6 |
pF |
|
|
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|
|
COUT |
Input/Output Capacitance |
VOUT = 0V |
8 |
pF |
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|
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4 |
Integrated Silicon Solution, Inc. — 1-800-379-4774 |
Rev. B 09/29/00