Infineon BC857A, BC857B, BC857BL3, BC857BW, BC857C Schematic [ru]

PNP Silicon AF Transistor

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 hz and 15 kHz

• Complementary types:

BC847...-BC850... (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

1)

BC857...-BC860...

1

BC857BL3 is not qualified according AEC Q101

Type Marking Pin Configuration Package

BC857A

BC857B

BC857BL3*

BC857BW

BC857C

BC857CW

BC858A

BC858B

BC858BW

BC858C

BC858CW

BC859C

BC860B

3Es

3Fs

3F

3Fs

3Gs

3Gs

3Js

3Ks

3Ks

3Ls

3Ls

4Cs

4Fs

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SOT23

SOT23

TSLP-3-1

SOT323

SOT23

SOT323

SOT23

SOT23

SOT323

SOT23

SOT323

SOT23

SOT23

BC860BW

BC860CW

4Fs

4Gs

* Not qualified according AEC Q101

1=B

1=B

2=E

2=E

1

3=C

3=C

-

-

-

-

-

-

SOT323

SOT323

2011-09-19

Maximum Ratings

g

BC857...-BC860...

Parameter

Collector-emitter voltage

Symbol Value Unit

V

BC857..., BC860...

BC858..., BC859...

Collector-base voltage

V

BC857..., BC860...

BC858..., BC859...

Emitter-base voltage V

Collector current I

Peak collector current, tp ≤ 10 ms I

Total power dissipation

≤ 71 °C, BC857-BC860

T

S

≤ 135 °C, BC857BL3

T

S

≤ 124 °C, BC857W-BC860W

T

S

P

Junction temperature T

CEO

CBO

EBO

C

CM

tot

j

V

45

30

50

30

5

100 mA

200

mW

330

250

250

150 °C

Storage temperature T

Thermal Resistance
Parameter

Junction - soldering point1)

BC857-BC860

BC857BL3

BC857W-BC860W

1

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

st

-65 ... 150

Symbol Value Unit

R

thJS

K/W

≤ 240

≤ 60

≤ 105

2

2011-09-19

Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

BC857...-BC860...

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 , BC857..., BC860...

C

I

= 10 mA, IB = 0 , BC858..., BC859...

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0 , BC857..., BC860...

C

I

= 10 µA, IE = 0 , BC858..., BC859...

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

Collector-base cutoff current

V

= 45 V, IE = 0

CB

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain1)

I

= 10 µA, VCE = 5 V, hFE-grp.A

C

I

= 10 µA, VCE = 5 V, hFE-grp.B

C

I

= 10 µA, VCE = 5 V, hFE-grp.C

C

I

= 2 mA, VCE = 5 V, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, hFE-grp.C

C

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

45

30

50

30

-

-

-

-

5 - -

-

-

-

-

-

125

220

420

-

-

140

250

480

180

290

520

-

-

-

-

0.015

5

-

-

-

250

475

800

V

µA

-

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

1

Pulse test: t < 300µs; D < 2%

3

V

CEsat

V

BEsat

V

BE(ON)

-

-

-

-

600

-

75

250

700

850

650

-

mV

300

650

-

-

750

820

2011-09-19

Electrical Characteristics at TA = 25°C, unless otherwise specified

BC857...-BC860...

Parameter

AC Characteristics

Transition frequency

I

= 20 mA, VCE = 5 V, f = 100 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Short-circuit input impedance

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

C

Open-circuit reverse voltage transf. ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

C

Symbol Values Unit

min. typ. max.

f

C

C

h

h

T

cb

eb

11e

12e

- 250 - MHz

- 1.5 - pF

- 8 -

-

-

-

-

-

-

2.7

4.5

8.7

1.5

2

3

kΩ

-

-

-

10

-4

-

-

-

Short-circuit forward current transf. ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

C

Open-circuit output admittance

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

C

Noise figure

I

= 0.2 mA, VCE = 5 V, f = 1 kHz,

C

∆

f = 200 Hz, R

= 2 kΩ, BC859, BC850

S

Equivalent noise voltage

I

= 200 mA, VCE = 5 V, RS = 2 kΩ,

C

f = 10...50 Hz, BC860

h

h

F

V

21e

22e

n

-

-

-

-

-

-

200

330

600

18

30

60

-

-

-

-

µS

-

-

-

- 1 4 dB

- - 0.11 µV

4

2011-09-19