INFINEON BC856A, BC856B, BC857A, BC857B, BC857C User Manual

PNP Silicon AF Transistors

BC856...BC860

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BC846, BC847, BC848

BC849, BC850 (NPN)

3

1

Type Marking Pin Configuration Package

BC856A BC856B BC857A

3As 3Bs 3Es

1 = B 1 = B 1 = B

2 = E 2 = E 2 = E

3 = C 3 = C 3 = C

SOT23 SOT23 SOT23

2

VPS05161

BC857B BC857C BC858A BC858B BC858C BC859B BC859C BC860B

3Fs 3Gs 3Js 3Ks 3Ls 4Bs 4Cs 4Fs

1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B

2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E

3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C

SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23

1 Jan-28-2005

Maximum Ratings

g

BC856...BC860

Parameter

Symbol BC856 BC857

Collector-emitter voltage V Collector-base voltage V Collector-emitter voltage V Emitter-base voltage V

DC collector current I Peak collector current I

Peak base current I Peak emitter current I Total power dissipation, TS = 71 °C

P

Junction temperature T Storage temperature T

Thermal Resistance

Junction - soldering point

1)

R

CEO CBO CES EBO

C CM BM

EM

tot j st

thJS

BC858

BC860

BC859 65 45 30 80 50 30 80 50 30

5 5 5

100 mA 200 mA 200 200

330 mW

150 °C

-65 ... 150

≤240 K/W

Unit

V

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

1

For calculation of

R

please refer to Application Note Thermal Resistance

thJA

BC856 BC857/860 BC858/859

V

(BR)CEO

V

(BR)CBO

65 45 30

80 50 30

-

V

-

2 Jan-28-2005

BC856...BC860

Electrical Characteristics at T

= 25°C, unless otherwise specified.

A

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 µA, VBE = 0

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

Collector cutoff current

V

= 30 V, IE = 0

CB

Collector cutoff current

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain 1)

BC856 BC857/860 BC858/859

Symbol Values Unit

min. typ. max.

V

(BR)CES

V

(BR)EBO

I

CBO

I

CBO

h

FE

80 50 30

-

5 - -

- - 15 nA

- - 5 µA

V

-

I

= 10 µA, VCE = 5 V

C

DC current gain 1)

I

= 2 mA, VCE = 5 V

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage 1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

h

FE

h

FE

h

FE

h

FE

h

FE

h

FE

-group A

-group B

-group C

-group A

-group B

-group C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

-

125 220 420

-

600

-

140 250 480

180 290 520

75

250

700 850

650

-

250 475 800

300 650

-

750 820

mV

1) Pulse test: t ≤ 300µs, D = 2%

3 Jan-28-2005