INFINEON BC846A, BC846B, BC847A, BC847B, BC847C User Manual

NPN Silicon AF Transistors

• For AF input stages and driver applications

BC846...BC850

• High current gain

3

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BC856, BC857, BC858

BC859, BC860 (PNP)

1

Type Marking Pin Configuration Package

BC846A

BC846B

BC847A

1As

1Bs

1Es

1 = B

B = 1

B = 1

2 = E

2 = E

2 = E

3 = C

3 = C

3 = C

SOT23

SOT23

SOT23

2

VPS05161

BC847B

BC847C

BC848A

BC848B

BC848C

BC849B

BC849C

BC850B

BC850C

1Fs

1Gs

1Js

1Ks

1Ls

2Bs

2Cs

2Fs

2Gs

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

1 = B

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

2 = E

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

3 = C

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

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Maximum Ratings

g

BC846...BC850

Parameter

Symbol

Collector-emitter voltage V
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V

DC collector current I
Peak collector current I

Peak base current I
Peak emitter current 200I
Total power dissipation, TS = 71 °C P
Junction temperature T
Storage temperature T

Thermal Resistance

Junction - soldering point

1)

C

CM

BM

EM

j

st

R

CEO

CBO

CES

EBO

tot

thJS

BC846 BC847

BC850

BC848

BC849

65 45 30 V

80 50 30

80 50 30

6 6

6

100 mA

200 mA

200

330 mW

150 °C

-65 ... 150

≤240 K/W

Unit

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0

C

1

For calculation of

R

please refer to Application Note Thermal Resistance

thJA

BC846

BC847/850

BC848/849

BC846

BC847/850

BC848/849

V

(BR)CEO

V

(BR)CBO

65

45

30

80

50

30

-

-

-

-

-

-

V

-

-

-

-

-

-

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BC846...BC850

Electrical Characteristics at T

= 25°C, unless otherwise specified.

A

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 µA, VBE = 0

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

Collector cutoff current

V

= 40 V, IE = 0

CB

Collector cutoff current

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain 1)

I

= 10 µA, VCE = 5 V

C

BC846

BC847/850

BC848/849

h

-group A

FE

h

-group B

FE

h

-group C

FE

Symbol Values Unit

min. typ. max.

V

(BR)CES

V

(BR)EBO

I

CBO

I

CBO

h

FE

80

50

30

-

-

-

-

-

-

6 - -

- - 15 nA

- - 5 µA

-

-

-

140

250

480

-

-

-

V

-

DC current gain 1)

I

= 2 mA, VCE = 5 V

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage 1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

h

FE

h

FE

h

FE

-group A

-group B

-group C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

110

200

420

-

-

-

-

580

-

180

290

520

90

200

700

900

660

-

220

450

800

250

600

-

-

700

770

mV

1) Pulse test: t ≤ 300µs, D = 2%

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