HP INA-02170 Datasheet

Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier

Technical Data

INA-02170

Features

• Cascadable 50 Ω Gain Block

• Low Noise Figure:

2.0 dB Typical at 0.5 GHz

• High Gain:

31.5 dB Typical at 0.5 GHz

feedback amplifier housed in a
hermetic, high reliability package.
It is designed for narrow or wide
bandwidth industrial and military
applications that require high gain
and low noise IF or RF
amplification.

25.0 dB Typical at 1.5 GHz

• 3 dB Bandwidth:

DC to 1.0 GHz

• Unconditionally Stable
(k>1)

• Hermetic Gold-Ceramic
Surface Mount Package

The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz f
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-

Description

The INA-02170 is a low noise
silicon bipolar Monolithic Micro-

tric and scratch protection to
achieve excellent performance,
uniformity and reliability.

wave Integrated Circuit (MMIC)

Typical Biasing Configuration

RFC (Optional)

V

, ISOSAT™-I silicon

MAX

> 8 GHz

CC

70 mil Package

R

bias

C

block

RF IN RF OUT

4

3

1

2

V

= 5.5 V

d

C

block

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5965-9674E

INA-02170 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 50 mA
Power Dissipation

[2,3]

400 mW

RF Input Power +13 dBm

Junction Temperature 200°C
Storage Temperature –65 to 200° C

[1]

Thermal Resistance

θjc = 140°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

CASE

= 25°C.

2. T

3. Derate at 7.1 mW/° C for T

4. See MEASUREMENTS section
“Thermal Resistance” for more

INA-02170 Electrical Specifications

[1]

, T

= 25° C

A

Symbol Parameters and Test Conditions: Id = 35 mA, Z

G

∆G

f

P

3 dB

Power Gain (|S21|2) f = 0.5 GHz dB 29.0 31.5 34.0

Gain Flatness f = 0.01 to 1.0 GHz dB ±1.5

P

3 dB Bandwidth

[2]

= 50 Ω Units Min. Typ. Max.

O

information.

GHz 1.0

ISO Reverse Isolation (|S12|2) f = 0.01 to 1.0 GHz dB 39

VSWR

Input VSWR f = 0.01 to 1.0 GHz 1.4:1

Output VSWR f = 0.01 to 1.0 GHz 1.5:1

NF 50 Ω Noise Figure f = 0.5 GHz dB 2.0 2.5

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 11

Third Order Intercept Point f = 0.5 GHz dBm 23

Group Delay f = 0.5 GHz psec 350

Device Voltage V 4.0 5.5 7.0

dV/dT Device Voltage Temperature Coefficient mV/°C +10

Notes:

1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.

2. Referenced from 10 MHz Gain (G

).

P

[2,4]

:

> 144° C.

C

INA-02170 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

S

= 35 mA)

d

22

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k

0.01 .05 –8 32.5 42.32 –2 –39.2 .011 14 .19 –1 1.26

0.05 .05 –31 32.5 42.32 –7 –38.9 .011 14 .19 –5 1.26

0.10 .06 –85 32.5 42.05 –14 –38.0 .013 10 .19 –10 1.15

0.20 .09 –110 32.3 41.06 –27 –38.8 .011 5 .18 –16 1.29

0.30 .12 –129 32.0 39.82 –40 –38.8 .011 1 .17 –21 1.32

0.40 .15 –140 31.7 38.43 –53 –40.2 .010 19 .16 –25 1.45

0.50 .17 –151 31.4 37.08 –65 –40.0 .010 8 .16 –27 1.48

0.60 .17 –159 31.0 35.49 –77 –39.6 .011 23 .16 –30 1.43

0.80 .18 –174 30.2 32.45 –101 –38.2 .012 23 .16 –40 1.43

1.00 .19 179 29.2 28.70 –126 –38.2 .012 17 .16 –53 1.55

1.20 .19 173 27.8 24.51 –149 –37.5 .013 27 .15 –71 1.66

1.40 .20 166 26.1 20.18 –171 –36.2 .015 35 .14 –102 1.73

1.60 .21 162 24.2 16.26 170 –36.3 .015 34 .12 –172 2.07

1.80 .22 159 22.3 13.02 153 –34.1 .020 46 .10 144 1.94

2.00 .23 155 20.4 10.45 139 –33.0 .022 37 .07 117 2.17

2.50 .25 150 16.7 6.82 112 –33.3 .022 32 .05 95 3.19

3.00 .29 144 13.1 4.51 87 –31.8 .026 32 .04 78 3.96

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