HP INA-02100 Datasheet
Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02100
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 1.0 GHz
• Unconditionally Stable
(k>1)
Description
The INA-02100 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier chip. It is designed for
narrow or wide bandwidth industrial and military applications that
require high gain and low noise IF
or RF amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz f
, ISOSAT™-I silicon
MAX
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielectric and scratch protection to
achieve excellent performance,
uniformity and reliability.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
[1]
wire.
Chip Outline
GND
2
[1]
RF
OUT
GND
RF
IN
Notes:
1. See Application Note, “A005:
Transistor Chip Use” for additional
information.
1
Typical Biasing Configuration
V
RFC (Optional)
R
bias
C
block
RF IN RF OUT
4
3
1
2
Vd = 5.5 V
(Nominal)
C
block
5965-9673E
CC
6-90
INA-02100 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 50 mA
Power Dissipation
[2,3]
400 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
INA-02100 Electrical Specifications
Symbol Parameters and Test Conditions
G
∆G
f
3 dB
P
Power Gain (|S21|2) f = 0.5 GHz dB 31.5
Gain Flatness f = 0.1 to 1.0 GHz dB ±1.5
P
3 dB Bandwidth GHz 1.0
[1,3]
, T
= 25° C
A
[2]
: Id = 35 mA, Z
[1]
Thermal Resistance
θjc = 60° C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
3. Derate at 16.7 mW/° C for T
176°C.
= 50 Ω Units Min. Typ. Max.
O
(TMS)
ISO Reverse Isolation (|S12|2) f = 0.01 to 1.0 GHz dB 39
VSWR
Input VSWR f = 0.01 to 1.0 GHz 1.4:1
Output VSWR f = 0.01 to 1.0 GHz 1.5:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 2.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 11
Third Order Intercept Point f = 0.5 GHz dBm 23
Group Delay f = 0.5 GHz psec 350
Device Voltage V 4.0 5.5 7.0
dV/dT Device Voltage Temperature Coefficient mV/°C +10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-02100 mounted in a 70 mil stripline package.
INA-02100 Typical Scattering Parameters
Freq.
S
11
S
21
[1]
(Z
= 50 Ω, TA = 25° C, I
O
S
12
= 5 mA)
d
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
= 25° C
MS
[2]
:
>
0.01 0.06 –4 32.5 42.1 –2 –39.3 .011 14 .20 –1 1.27
0.05 0.05 –8 32.5 42.0 –8 –39.4 .011 12 .20 1 1.28
0.10 0.03 –46 32.3 41.3 –16 –37.9 .013 6 .20 –1 1.17
0.20 0.02 –52 31.8 39.0 –30 –39.2 .011 –4 .21 3 1.33
0.30 0.01 –46 31.1 36.2 –43 –38.8 .011 –12 .22 4 1.36
0.40 0.02 –44 30.4 33.3 –55 –40.4 .010 –2 .24 2 1.63
0.50 0.03 –35 29.7 30.7 –65 –39.3 .011 –17 .26 –1 1.56
0.60 0.06 –29 29.0 28.4 –74 –39.5 .011 –5 .28 –4 1.67
0.80 0.10 –41 27.9 24.8 –92 –38.1 .012 –9 .32 –14 1.58
1.00 0.17 –60 26.9 22.0 –108 –36.4 .015 –19 .34 –26 1.41
1.20 0.24 –73 26.0 19.9 –124 –35.5 .017 –16 .36 –40 1.32
1.40 0.30 –89 25.1 18.0 –141 –34.1 .020 –16 .38 –60 1.17
1.60 0.37 –103 24.1 16.0 –157 –32.6 .023 –30 .32 –91 1.19
1.80 0.42 –116 22.9 14.0 –174 –33.1 .022 –28 .26 –111 1.29
2.00 0.46 –128 21.5 12.0 171 –31.4 .027 –31 .22 –122 1.25
2.50 0.50 –146 18.3 8.2 142 –29.3 .034 –44 .19 –148 1.34
3.00 0.51 –162 14.6 5.4 116 –28.5 .038 –47 .15 178 1.83
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Communications Components Designer’s Catalog.
6-91
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