HP INA-01170 Datasheet

Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier

Technical Data

INA-01170

Features

• Cascadable 50 Ω Gain Block

• Low Noise Figure:

1.7 dB Typical at 100 MHz

• High Gain:

amplifier housed in a hermetic, high
reliability package. It is designed for
narrow or wide bandwidth indus­trial and military applications that
require high gain and low noise IF
or RF amplification.

32.5 dB Typical at 100 MHz

• 3 dB Bandwidth:

DC to 500␣ MHz

• Unconditionally Stable
(k>1)

• Hermetic Gold-Ceramic
Surface Mount Package

The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25␣ GHz f
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-

Description

The INA-01170 is a low-noise silicon
bipolar Monolithic Microwave

tric and scratch protection to
achieve excellent performance,
uniformity and reliability.

Integrated Circuit (MMIC) feedback

Typical Biasing Configuration

RFC (Optional)

70 mil Package

, ISOSAT™-I silicon

MAX

> 8 V

V

CC

R

(Required)

bias

C

block

RF IN RF OUT

4

3

1

2

V

= 5.5 V

d

C

block

6-87

5965-9562E

INA-01170 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 50 mA
Power Dissipation

[2,3]

400 mW

RF Input Power +13 dBm

Junction Temperature 200°C
Storage Temperature –65 to 200° C

[1]

Thermal Resistance

θjc = 140°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

CASE

= 25°C.

2. T

3. Derate at 7.1 mW/° C for T

4. See MEASUREMENTS section
“Thermal Resistance” for more

INA-01170 Electrical Specifications

[1]

, T

= 25° C

A

Symbol Parameters and Test Conditions: Id = 35 mA, Z

G

P

∆G

f

3 dB

ISO Reverse Isolation (|S

VSWR

Power Gain (|S21|2) f = 100 MHz dB 30 32.5 35

Gain Flatness f = 10 to 250 MHz dB ±0.5

P

3 dB Bandwidth

[2]

|2) f = 10 to 250 MHz dB 39

12

Input VSWR f = 10 to 250 MHz 1.6:1

Output VSWR f = 10 to 250 MHz 1.5:1

= 50 Ω Units Min. Typ. Max.

O

information.

MHz 500

NF 50 Ω Noise Figure f = 100 MHz dB 2.0 2.5

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 100 MHz dBm 11

Third Order Intercept Point f = 100 MHz dBm 23

Group Delay f = 100 MHz psec 200

Device Voltage V 4.0 5.5 7.0

dV/dT Device Voltage Temperature Coefficient mV/°C +10

Notes:

1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.

2. Referenced from 10 MHz Gain (G

).

P

[2,4]

:

> 144° C.

C

INA-01170 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

S

= 35 mA)

d

22

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k

0.01 .09 –20 32.8 43.65 –2 –38.4 .012 –5 .17 –1 1.17

0.05 .10 –39 32.8 43.51 –9 –38.3 .012 17 .18 0 1.17

0.10 .13 –65 32.6 42.82 –18 –38.3 .012 –4 .18 1 1.17

0.15 .17 –83 32.4 41.71 –26 –38.4 .012 17 .19 2 1.18

0.20 .21 –96 32.1 40.41 –35 –38.6 .012 12 .19 3 1.18

0.25 .25 –107 31.8 38.93 –43 –39.0 .011 26 .19 4 1.26

0.30 .28 –115 31.5 37.38 –50 –39.0 .011 3 .20 5 1.26

0.40 .33 –130 30.7 34.19 –65 –39.3 .011 21 .21 3 1.31

0.50 .37 –140 29.9 31.13 –78 –39.2 .011 11 .22 0 1.35

0.60 .40 –150 29.0 28.30 –90 –38.9 .011 22 .23 –5 1.43

0.80 .43 –164 27.4 23.48 –112 –38.5 .012 30 .24 –19 1.52

1.0 .44 –176 25.8 19.45 –132 –36.5 .015 32 .23 –32 1.49

1.5 .44 165 21.8 12.37 –179 –33.6 .020 42 .19 –69 1.75

2.0 .44 154 17.9 7.88 146 –33.0 .022 42 .13 –106 2.42

2.5 .46 148 14.6 5.36 121 –30.6 .029 36 .12 –151 2.63

3.0 .48 139 11.4 3.71 96 –30.0 .032 45 .10 159 3.31

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