HP INA-01100 Datasheet
Low Noise, Cascadable
Silicon␣ Bipolar MMIC Amplifier
Technical Data
INA-01100
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
1.7 dB Typical at 100 MHz
• High Gain:
32.5 dB Typical at 100 MHz
• 3 dB Bandwidth:
DC to 500␣ MHz
• Unconditionally Stable
(k>1)
Description
The INA-01100 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier chip. It is designed for
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz f
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielectric and scratch protection to
achieve excellent performance,
uniformity and reliability.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
narrow or wide bandwidth industrial and military applications that
require high gain and low noise IF
or RF amplification.
Typical Biasing Configuration
RFC (Optional)
[1]
[1]
RF
OUT
GND
1
RF
IN
, ISOSAT™-I silicon
MAX
Chip Outline
GND
2
Note:
1. See Application Note, “A005: Transistor
Chip Use” for additional information.
V
CC
R
bias
C
block
RF IN RF OUT
4
3
1
2
V
= 5.5 V
d
(Nominal)
C
block
5965-9561E
6-84
INA-01100 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 50 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
[2,3]
400 mW
[1]
Thermal Resistance:
θjc = 60°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
3. Derate at 16.7 mW/° C for T
176°C.
(TMS)
= 25°C.
MS
>
INA-01100 Electrical Specifications
Symbol Parameters and Test Conditions
G
P
∆G
f
3 dB
ISO Reverse Isolation (|S
VSWR
Power Gain (|S21|2) f = 100 MHz dB 32.5
Gain Flatness f = 10 to 250 MHz dB ±0.5
P
3 dB Bandwidth MHz 500
|2) f = 10 to 250 MHz dB 39
12
Input VSWR f = 10 to 250 MHz 1.6:1
Output VSWR f = 10 to 250 MHz 1.5:1
[1,3]
, T
= 25° C
A
[2]
: Id = 35 mA, Z
= 50 Ω Units Min. Typ. Max.
O
NF 50 Ω Noise Figure f = 100 MHz dB 1.7
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 100 MHz dBm 11
Third Order Intercept Point f = 100 MHz dBm 23
Group Delay f = 100 MHz psec 200
Device Voltage V 4.0 5.5 7.0
dV/dT Device Voltage Temperature Coefficient mV/°C +10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-01100 mounted in a 70 mil stripline package.
INA-01100 Typical Scattering Parameters
Freq.
S
11
S
21
[1]
(Z
= 50 Ω, TA = 25° C, V
O
S
12
CC
S
= 35 mA)
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.01 0.09 –16 32.7 43.4 –1 –38.5 .012 –1 .18 1 1.17
0.05 0.10 –27 32.7 43.1 –10 –38.6 .012 15 .19 5 1.18
0.10 0.11 –5 32.4 41.9 –20 –38.4 .012 –8 .20 10 1.17
0.20 0.14 –80 31.6 38.0 –37 –38.6 .012 4 .24 14 1.22
0.30 0.18 –98 30.5 33.7 –52 –38.8 .011 –10 .27 15 1.31
0.40 0.20 –110 29.4 29.6 –65 –39.6 .011 2 .30 10 1.51
0.50 0.22 –115 28.4 26.2 –75 –38.6 .012 –12 .32 6 1.48
0.60 0.24 –120 27.4 23.4 –84 –39.1 .011 –7 .34 1 1.67
0.80 0.27 –124 25.7 19.3 –100 –38.3 .012 –6 .36 –11 1.76
1.00 0.30 –127 24.3 16.3 –115 –36.1 .016 –5 .36 –22 1.58
1.5 0.44 165 21.8 12.37 –179 –33.6 .020 42 .19 –69 1.75
2.0 0.44 154 17.9 7.88 146 –33.0 .022 42 .13 –106 2.42
2.5 0.46 148 14.6 5.36 121 –30.6 .029 36 .12 –151 2.63
3.0 0.48 139 11.4 3.71 96 –30.0 .032 45 .10 159 3.31
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Communications Components Designer’s Catalog.
6-85
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