HP AT-31625-TR1, AT-31625-BLK Datasheet

4.8 V NPN Common Emitter
Medium Power Output Transistor

Technical Data

AT-31625

Features

• 4.8 Volt Operation

• +28.0 dBm P
Typ.

• 70% Collector Efficiency
@␣ 900 MHz, Typ.

• 9 dB Power Gain @ 900 MHz,
Typ.

• -31 dBc IMD3 @ P
21␣ dBm per Tone, 900␣ MHz,
Typ.

• 50% Smaller than SOT-223
Package

@ 900 MHz,

out

of

out

Applications

• Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN

• Output Power Device for
ISM 900, Cordless, WLAN

MSOP-3 Surface Mount Plastic Package

Outline 25

Pin Configuration

COLLECTOR

4

EMITTER 1 2

3 EMITTER

BASE

Description

Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica­tion. The AT-31625 features
+28␣ dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.

The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz Ft Self­Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self­alignment techniques, and gold
metalization in the fabrication of
these devices.

4-43

5965-5911E

AT-31625 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

T

j

T

STG

Emitter-Base Voltage V 1.4
Collector-Base Voltage V 16.0
Collector-Emitter Voltage V 9.5
Collector Current mA 320
Power Dissipation

[2]

W 1.0

Junction Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance

[3]

:

θjc = 65°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. Derate at 15.4 mW/°C for T

Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.

3. Using the liquid crystal technique,

= 4.8 V, Ic= 50 mA, T

V

CE

1-2␣ µm “hot-spot” resolution.

> 85°C.

c

=150°C,

j

Electrical Specifications, T

= 25° C

C

Symbol Parameters and Test Conditions Units Min. Typ. Max.

Freq. = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A,
unless otherwise specified

P

out

η

C

Output Power

Collector Efficiency

IMD33rd Order Intermodulation Distortion, 2 Tone Test, F1 = 899 MHz dB c -31

P

each Tone = +21 dBm

out

Mismatch Tolerance, No Damage

[1]

[1]

[1]

[1]

Pin = +19 dBm dBm +27.0 +28.0

Pin = +19 dBm % 55 70

F2 = 901 MHz

P

= +28 dBm 7:1

out

any phase, 2 sec duration

BV

BV

BV

h

FE

I

CEO

Note:

1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.

Emitter-Base Breakdown Voltage IE = 0.2 mA, open collector V 1.4

EBO

Collector-Base Breakdown Voltage IC = 1.0 mA, open emitter V 16.0

CBO

Collector-Emitter Breakdown Voltage IC = 5.0 mA, open base V 9.5

CEO

Forward Current Transfer Ratio VCE = 3 V, IC = 180 mA — 80 150 330

Collector Leakage Current V

= 5 V µA15

CEO

4-44

AT-31625 Typical Performance, T

= 25° C

C

Frequency = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A, unless otherwise specified.

31

Γ

= 0.73 ∠ -156

source

29

Γ

= 0.42 ∠ -179

load

27
25

(dBm)

23
21

19

17

OUTPUT POWER

15
13

11

P

out

η

c

21412641081816 2220

INPUT POWER (dBm)

100
90

80
70
60
50
40
30
20
10

0

Figure 1. Output Power and Collector
Efficiency vs. Input Power.

32

Γ

= 0.73 ∠ -156

source

30

Γ

= 0.42 ∠ -179

(%)

COLLECTOR EFFICIENCY

load

28
26

(dBm)

24
22
20
18

OUTPUT POWER

16
14

12

INPUT POWER (dBm)

3.0 V

3.6 V

4.8 V

141261081816 2220

Figure 2. Output Power vs. Input
Power Over Bias Voltage.

100

Γ

= 0.73 ∠ -156

source

Γ

= 0.42 ∠ -179

load

90

(%)

80

70

60

50

40

COLLECTOR EFFICIENCY

30

12 1814 16 20 22

INPUT POWER (dBm)

Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.

3.0 V

3.6 V

4.8 V

32

Γ

= 0.73 ∠ -156

source

30

Γ

= 0.42 ∠ -179

load

28

(dBm)

26
24
22
20
18

OUTPUT POWER

16
14

INPUT POWER (dBm)

TC = +85°C

= +25°C

T

C

= –40°C

T

C

141261081816 2220

Figure 4. Output Power vs. Input
Power Over Temperature.

0

Γ

= 0.73 ∠ -156

source

-2

Γ

= 0.42 ∠ -179

load

-4

-6

(dB)

-8

-10

-12

RETURN LOSS

-14

-16

-18
800 850 950 1000900

FREQUENCY (MHz)

Output R.L.

Input R.L.

Figure 7. Input and Output Return
Loss vs. Frequency.

0

Γ

= 0.73 ∠ -156

source

-5

Γ

= 0.42 ∠ -179

load

-10

-15

-20

(dBc)

-25

IMD

-30

-35

-40

-45

IMD

-50
81410 12 16 18 22 2420

Figure 5. IMD
Power Per Tone.

5

OUTPUT POWER/TONE (dBm)

, IMD5 vs. Output

3

IMD

31.0

Γ

30.5

Γ

30.0

29.5

(dBm)

29.0

28.5

3

28.0

27.5

OUTPUT POWER

27.0

26.5

26.0
800 920840 880 960 1000

Pin = +19 dBm

= 0.73 ∠ -156

source

= 0.42 ∠ -179

load

FREQUENCY (MHz)

100
90

(%)

η

c

P

out

80
70
60
50
40
30
20

COLLECTOR EFFICIENCY

10

0

Figure 6. Output Power and Collector
Efficiency vs. Frequency.

Note: Tuned at 900 MHz, then Swept over
Frequency.

4-45