Datasheet HMC224MS8 Datasheet (hittite)

查询HMC224MS8供应商

14

MICROWAVE CORPORATION

Typical Applications

The HMC224MS8 is ideal for:

• UNII & HiperLAN

• PCMCIA WirelessLAN

Functional Diagram

v01.0300

HMC224MS8

GaAs MMIC T/R SWITCH

5.0 - 6.0 GHz

Features

Low Cost 5-6 GHz Switch

Ultra Small Package: MSOP8

High Input P1dB: +33 dBm

Single Positive Supply: +3 to +8V

General Description

The HMC224MS8 is a low-cost SPDT switch in
an 8-lead MSOP package for use in transmit­receive applications. The device can control sig­nals from 5.0 to 6.0 GHz and is especially suited
for 5.2 GHz UNII and 5.8 GHz ISM applications
with only 1.2 dB loss. The design provides excep­tional power handling performance; input P1dB =
+33 dBm at 5 Volt bias. RF1 and RF2 are refl ec­tive shorts when “Off”. On-chip circuitry allows
single positive supply operation at very low DC
current with control inputs compatible with CMOS
and most TTL logic families. No DC blocking
capacitors are required on RF I/O ports.

Electrical Specifi cations, T

Insertion Loss

Isolation

SWITCHES - SMT

Return Loss

Input Power for 1 dB Compression

Input Third Order Intercept

Switching Characteristics 5.0 - 6.0 GHz

14 - 72

= +25° C, Vdd = +5 Vdc, 50 Ohm System

A

Parameter Frequency Min. Typ. Max. Units

RF Common

RF1 & RF2

0/3V Control
0/5V Control

0/3V Control
0/5V Control

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

5.0 - 6.0 GHz

5.1 - 5.4 GHz

5.4 - 5.9 GHz

5.0 - 6.0 GHz

5.1 - 5.4 GHz

5.4 - 5.9 GHz

5.0 - 6.0 GHz

5.1 - 5.9 GHz

5.0 - 6.0 GHz

5.1 - 5.9 GHz

5.0 - 6.0 GHz

5.0 - 6.0 GHz

5.0 - 6.0 GHz

5.0 - 6.0 GHz

20
26
22

11
12
11
11

27
29

31
33

1.3

1.2

1.3

24
31
27

15
16
14
15

31
33

35
37

10
25

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

1.6

1.5

1.6

dB
dB
dB

dB
dB
dB

dB
dB
dB
dB

dBm
dBm

dBm
dBm

ns
ns

MICROWAVE CORPORATION

v01.0300

GaAs MMIC T/R SWITCH

Insertion Loss Isolation

HMC224MS8

5.0 - 6.0 GHz

0

-0.5

-1

-1.5

-2

-2.5

-3

INSERTION LOSS (dB)

-3.5

-4
45678

FREQUENCY (GHz)

Return Loss

0

-5

-10

-15

-20

RETURN LOSS (dB)

-25

S11 RFC

S22

0

-10

-20

ISOLATION (dB)

-30

-40
45678

FREQUENCY (GHz)

Absolute Maximum Ratings

Bias Voltage Range (Vdd) -0.2 to +12 Vdc

Control Voltage Range (A & B) -0.2 to Vdd Vdc

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

14

-30
45678

FREQUENCY (GHz)

Truth Table

*Control Input Voltage Tolerances are ± 0.2 Vdc.

A

(Vdc)

Control

Input*

(Vdc)

Bias

Vdd

(Vdc)

3 0 0 10 -5 -5 OFF OFF

3 0 Vdd 10 -10 0 ON OFF

3 Vdd 0 10 0 -10 OFF ON

5 0 0 45 -22 -23 OFF OFF

5 0 Vdd 45 -5 -40 ON OFF

5 Vdd 0 115 -40 -5 OFF ON

Caution: Do not operate in 1dB compression at power levels above +33 dBm and do not “hot switch”
power levels greater than +23 dBm (Vdd = +5Vdc).

DC blocks are not required at ports RFC, RF1 and RF2.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Bias Current

B

Idd

(uA)

Order Online at www.hittite.com

Control
Current

Ia

(uA)

Control
Current

Ib

(uA)

RF to

RF1

Signal

Path State

SWITCHES - SMT

RF to

RF2

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14

MICROWAVE CORPORATION

Outline Drawing

v01.0300

HMC224MS8

GaAs MMIC T/R SWITCH

5.0 - 6.0 GHz

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Typical Application Circuit

SWITCHES - SMT

Notes:

1. Control Inputs A and B can be driven directly with CMOS logic
(HC) with V of 3 to 8 Volts applied to the CMOS logic gates
and to pin 4 of the RF switch.

2. Set V to 5 Volts and use HCT series logic to provide a TTL
driver interface.

3. Highest RF signal power capability is achieved with V set to
+10V. However, the switch will operate properly (but at
lower RF power capability) at bias voltages down to +3V.

4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B
ports. Resistors R1, R2, R3 = 100 Ohms should be placed
close to the Vdd, A and B ports. Use resistor size 0402 to
minimize parasitic inductances and capacitances.

5. DC Blocking capacitors are not required for each RF port.

6. Evaluation PCB available.

14 - 74

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

Evaluation PCB

v01.0300

HMC224MS8

GaAs MMIC T/R SWITCH

5.0 - 6.0 GHz

List of Material

Item Description

J1 - J3 PC Mount SMA RF Connector

J4 - J7 DC Pin

R1, R3

U1 HMC224MS8 T/R Switch

PCB* 104518 Evaluation PCB

* Circuit Board Material: Rogers 4350

100 Ω

resistor, 0402 Pkg.

The circuit board used in the fi nal application
should be generated with proper RF circuit design
techniques. Signal lines at the RF port should
have 50 ohm impedance and the package ground
leads should be connected directly to the ground
plane similar to that shown above. The evalua­tion circuit board shown above is available from
Hittite Microwave Corporation upon request.

14

SWITCHES - SMT

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

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