HIT HA16664AFP, HA16654APS, HA16664APS Datasheet

HA16654A, HA16664A Series

PWM Controlled Switching Regulator

The HA16654A and HA16664A are PWM control switching regulator ICs which drive a power MOSFET
at high speed and high frequency. The standby current is limited to as small as 1.5 mA (typ). These
devices incorporate totem pole circuits suited for high-speed push-pull operation at the output stage,
accomplishing high-speed switching with rising time tr = 80 ns (typ) and falling time tf = 40 ns (typ) at 20
V swing.

Functions

• Reference voltage circuit

• Triangular waveform oscillation circuit

• PWM comparator circuit

• Low-input malfunction protection circuit

• Output drive circuit

• Soft start and quick shut down

Features

• High speed switching: tr = 80 ns, tf = 40 ns (typ) when use exernal driver circuit

• High frequency operation:

HA16654A (f = 100 kHz to 500 kHz)
HA16664A (f = 100 kHz to 200 kHz)
Low power dissipation : 2 mA max in standby state

• 5 V reference voltage

• Low-input malfunction protection (High threshold voltage: 10 V Typ, Low threshold voltage: 8 V

Typ)

• Adjustable dead band width

• Enlarged output pulse width control range (0 to 80%)

• Soft start and quick shut down functions

• Single output: totem pole

HA16654A, HA16664A Series

Ordering Information

Type No. Operating Frequency Package

HA16654APS 100 kHz to 500 kHz DP-8
HA16654AFP FP-14DA
HA16664APS 100 kHz to 200 kHz DP-8
HA16664AFP FP-14DA

Pin Arrangement

• HA16654APS,HA16664APS

• HA16654AFP,HA16664AFP

NC
NC

1

C

T

2

R

T

3

V

ref

4

V

IN

8

EI

C

T

DB

7

GND

6

OUT

5

R

T

V

ref

V

IN

NC

(Top view)

Table 1 Pin Function

Symbol Pin Name

C

T

R

T

Vref Reference voltage
V

IN

EI Error input
DB Dead band
GND Ground
OUT Driver output

Timing capacitor
Timing resistor

Input voltage

1
2
3
4
5
6
7

(Top view)

14
13
12
11
10

9
8

NC
NC
EI
DB
GND
OUT
NC

2

Block Diagram

2

R

T

1

C

T

3

Vref

V

4

IN

Oscillator

To internal
circuitry

Reference
Regulator

To under
voltage
lockout

EIDB

7 8

To Vref

Under Voltage
Lockout
(Hysteresis Type)

ERROR

INPUT

HA16654A, HA16664A Series

PWM
Compa­rator

V

IN

Output Stage

5

6

OUT

GND

DB

C

T

OUT

Figure 1 Waveform Timing

3

HA16654A, HA16664A Series

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit Notes

Power supply voltage V
Collector current (Push-pull) I
Comparator input voltage V
RT input current I
Power dissipation P

IN

O

COM

RT

T

Operation temperature range Topr –20 to +85 °C
Storage temperature range Tstg –55 to 125 °C

Notes: 1. Ta ≤ 45°C, if Ta > 45°C, derate by 8.3 mW/°C

2. Tjmax = θj–a • Pcmax + Ta (θj–a:Thermal resistance between junction and atmosphere at set
board use)

The wiring density and the material of the set board must be chosen for thermal conductance of

efficacy board.

Electrical Characteristics

+40 V
20 mA
Vref + 0.3 V
1mA
680 mW 1, 2

HA16654APS/AFP (Ta = 25°C, VIN = 20 V, CT = 220 pF, RT = 27 kΩ at f 500 kHz)

Voltage Reference

Item Symbol Min Typ Max Unit Test Condition

Output voltage Vref 4.75 5.00 5.25 V
Line regulation Line — — 100 mV VIN = 7.3 to 11 V

—10 25mV VIN = 11 to 40 V
Load regulation Load — 5 16 mV IO = 0 to 10 mA
Temperature stability V
Short circuit current I

RTC

OS

— –26 — ppm/°C

10 35 — mA Vref = 0 V

4

HA16654A, HA16664A Series

Oscillator

Item Symbol Min Typ Max Unit Test Condition

Maximum frequency f
Minimum frequency f
Initial accuracy f
Voltage stability f

max

min

dev

av

PWM

Item Symbol Min Typ Max Unit Test Condition

Maximum duty cycle D

u 80 — — %

Duty cycle accuracy Ddev — ±1 ±6% R
Input bias current I

B

Output Driver

Item Symbol Min Typ Max Unit Test Condition

Sink current at Vin low I
Output low level V
Output high level V
Output rising time t
Output falling time t
High level threshold V
Low level threshold V
Hysteresis width V

(Low) 0.6 1.5 — mA VIN = 6 V, V

OS

OL

OH

r

f

THH

THL

HRS

500 — — kHz CT = 220 pF

— — 100 kHz CT = 560 pF

—— ±10 %

— –0.02 ±1.0 kHz/V VIN = 11 to 40 V

= 13 kΩ, R2 = 39 kΩ

1

— — 2.0 µAV

= 4 V, VDB = 0 V or

E1

V

= 0 V, VDB = 4 V

E1

OUT

— 0.86 1.4 V IO(sink) = 10 mA

VIN – 2.2 — — V IO(source) = 10 mA

— 80 150 ns Figure 3

— 40 100 ns Figure 3

9 10 11 V UVL characteristics

7.3 8 9 V UVL characteristics

1.5 2.0 2.5 V UVL characteristics

= 0.4 V

Total Current

Item Symbol Min Typ Max Unit Test Condition

Standby current I
Operation current V

CCS

CCL

— 1.5 2.0 mA Figure 2

5.0 9.0 13.0 mA R1 = 13 kΩ, R2 = 29 kΩ,
V

= 20 V

IN

Figure 2

5