The HA17301P is an internal-compensation quad operational amplifier that operates on a single-voltage
power supply. Typical applications for the HA17301P include waveform generators, voltage regulators,
logic circuits, and voltage-controlled oscillators.
The HA17301P is a quad operational amplifier, and consists of four operational amplifier circuits and one
bias current circuit. The HA17301P features a wide operating temperature range, single-voltage power
supply operation, internal phase compensation, a wide zero-cross bandwidth, a low input bias current, and a
high open-loop gain. Thus the HA17301P can be used in a wide range of applications. This section
describes several applications using the HA17301P.
HA17301 Circuit Operation
V
CC
Q
C
3 pF
Inverting input
3
Non inverting
input
2
D
1
GND
Bias circuit
5
1
Q
Q
3
Q
4
1
Q
10
Op amp 1
Q
2
4
Output
Figure 1 HA17301 Internal Equivalent Circuit
Figure 1 shows the internal equivalent circuit for the HA17301P bias circuit and one operational amplifier
circuit (Op amp 1).
Op amp 1 is basically an emitter ground type operational amplifier in which the input transistor Q1, the
buffer transistor Q4, the current source transistor Q5, the output emitter-follower transistor Q2, and the
current source transistor Q10 form an inverting amplifier. The voltage gain of this circuit is all given by the
transistor Q1, and the adoption of the current-supply load Q5 allows this circuit to provide a large open-loop
gain even at low power-supply voltages. Next, the emitter-follower transistor Q2 lowers the output
impedance of this circuit. The use of the power-supply transistor Q10 as the load for Q2 gives this circuit an
extremely large dynamic range, and essentially an amplitude from ground to (VCC – 1) can be acquired.
Also, the buffer transistor Q4 is used to reduce the input current without increasing the DC input voltage
level. Since the capacitor C1 is used to preserve stability when this inverting amplifier is used as a closed
circuit, no external compensation is required.
Now consider the non inverting circuit. Assuming that the current amplification ratio provided by Q3 is
adequately large for the current flowing into the non inverting input, then all that current will flow through
diode D1 and the voltage drop induced in the diode D1 by this input current will be applied to the Q3 baseemitter junction. Therefore, if D1 and Q3 are matched, a current equal to the input current will flow in the
Q3 emitter. Assuming that the current amplification ratio provided by Q3 is adequately large, a current equal
to the input current will flow in the Q3 collector. This is called a “current mirror”, and when an external
feedback resistor is used, a current equal to the non inverting input current will flow in this resistor and thus
determine the output voltage.
4
HA17301P
Inverting Amplifier
There are three bias techniques for biasing the inverting amplifier, the single power supply bias technique,
the NVBE bias technique, and the load voltage bias technique.
1. Single Power Supply Bias Technique
Figure 2 shows a common AC amplifier that is biased by the same power supply as the supply that
operates the amplifier.
R
2
= −
R
R
Vout
Vin
2. NVBE Bias Technique
−
D
+
1 MΩ
+
V
500 k
−
+
Cin
0.1 µF
Vin
R
1
50 kΩ
R3 = 2R
V
V
D
+
I
2
Figure 2 Single Power Supply Bias Technique
2
1
Vin
Cin
0.1 µF
R
1
100 kΩ
V
RE
I
82 kΩ
R
3
−
+
(1)
R
2
1 MΩ
Vout
−
I
Vout
Figure 3 NVBE Bias Technique
This is the most useful application of an inverting AC amplifier. In this circuit, the input bias voltage
VBE for the inverting input is determined by the current that flows to ground through the resistor R3.
= −
R
2
R
1
(2)
Vout
Vin
5
HA17301P
Triangular Wave oscillator
Triangular waveforms are usually acquired by integrating an alternating positive and negative DC voltage.
Figure 4 shows the relation between the input and output in this circuit.
This section describes three comparator circuits implemented using the HA17301P, a positive input voltage
comparator, a negative input voltage comparator, and a power voltage comparator.
1. Positive Input Voltage Comparator
−
1 MΩ
1 MΩ
I
−
+
I
+
Vout
+V
+Vin
REF
Figure 7 Positive Input Voltage Comparator
Vout in the circuit shown in figure 7 will be VOH when I– < I+ and VOL when I– > I+. To assure that this
circuit operates correctly, the reference voltage must be greater than VBE.
7
HA17301P
28
24
20
16
12
8
Output voltage Vout (V)
4
0
VCC = 28 V
20
15
10
V
= 5 V
5
3
123456789
REF
Input voltage Vin (V)
Figure 8 Positive Input Voltage Comparator Operating Characteristics (1)
24
20
16
12
8
1.0
2.0
= 0.5 V
REF
V
4
Output voltage Vout (V)
5.0
10
V+ = 15 V
15
0
Figure 9 Positive Input Voltage Comparator Operating Characteristics (2)
2. Negative Input Voltage Comparator
Vin
V
REF
100 kΩ
100 kΩ
Figure 10 Negative Input Voltage Comparator
24681012141618
Input voltage Vin (V)
+
V
R
3
200 kΩ
R
1
R
2
R
4
200 kΩ
−
I
+
I
−
+
Vout
8
HA17301P
VIN > R1
1
V
BE
1
+
R
R
1
+
V
−
R
4
4
(6)
If resistor R4 is chosen so that formula 6 holds, and
1
V
> R2
REF
V
BE
1
+
R
R
2
if resistor R4 is chosen so that formula 7 holds, then even if VIN and V
+
V
−
R
3
3
(7)
are negative, Vout will be V
REF
when I– < I+ and VOL when I– > I+, as was the case for the positive input voltage comparator.
28
24
20
16
12
8
V
= −1 V
Output volatge Vout (V)
4
0
REF
−6−5−4−3−2−10
Input volatge Vin (V)
V+ = +28 V
+20
+15
+10
+5
+3
OH
Figure 11 Negative Input Voltage Comparator Operating Characteristics (1)
24
20
16
12
8
Output voltage Vout (V)
4
0
= −15 V
REF
V
−6−5−4−3−2−10
V− = +15 V
−2
−1
Input voltage Vin (V)
Figure 12 Negative Input Voltage Comparator Operating Characteristics (2)
9
HA17301P
3. Power Comparator
As shown in figure 13, adding an external transistor allows the circuit to drive loads that require a larger
current than the output current that the HA17301P can supply.
+
V
12ESB
40 mA
LAMP
V
REF
−
1 MΩ
Vin
+
5.1 kΩ
1 MΩ
Figure 13 Power Comparator
24
20
16
15 Ω
2SC458 K
12
2
8
= −1 V
REF
V
4
Output voltage Vout (V)
204 6 8 1012141618
5
10
15
Input voltage Vin (V)
Figure 14 Power Comparator Operating Characteristics
10
Characteristic Curves
HA17301P
Input Bias Current vs.
Ambient Temperature
140
V
120
100
(nA)
IB
80
60
40
Input bias current I
20
0
−4004060100
−202080
CC
Ambient temperature Ta (°C)
Supply current vs.
Power-Supply Voltage (2)
14
Ta = 25°C
= Grounded
12
V
in(+)
= 15 V
Power-Supply Voltage (1)
14
12
10
(mA)
CO
8
6
4
Supply current I
2
0
4121624
Power-supply voltage VCC (V)
1.00
Supply current vs.
Ta = 25°C
= Open
V
in(+)
82028
Current Mirror Gain vs
Ambient Temperature
VCC = 15 V
10
(mA)
CG
8
6
4
Supply current I
2
08162028
41224
Power-supply voltage VCC (V)
(A/A)
I
0.95
0.90
Current mirror gain A
0
−4004060100
−202080
Ambient temperature Ta (°C)
11
HA17301P
Output Source Current vs.
Power-Supply Voltage
28
24
(mA)
20
o source
16
12
8
4
Output source current I
08162028
41224
Power-supply voltage VCC (V)
80
70
60
(dB)
VD
50
Ta = 25°C
= 0.4 Vdc
V
OH
Voltage Gain vs.
Frequency
VCC = 15 V
Ta = 25°C
= 1 mV
V
in
Output Sink Current vs.
Power-Supply Voltage
1.4
Ta = 25°C
1.2
(mA)
1.0
o sink
0.8
0.6
0.4
0.2
Output sink current I
08162028
41224
V
Power-supply voltage VCC (V)
Voltage Gain vs.
Ambient Temperature
(dB)
VD
74
72
70
68
VCC = 15 V
f = 1 kHz
= 0.4 Vdc
OL
40
30
Voltage gain A
20
0
0.1 k100 k1 M
1 k10 k10 M
Frequency f (Hz)
66
64
Voltage gain A
62
60
−4004060100
−202080
Ambient temperature Ta (°C)
12
Package Dimensions
1
19.20
20.32 Max
1.30
HA17301P
Unit: mm
814
6.30
7.40 Max
7
2.54 ± 0.25
2.39 Max
0.48 ± 0.10
2.54 Min 5.06 Max
0.51 Min
Hitachi Code
JEDEC
EIAJ
Mass
7.62
+ 0.10
0.25
– 0.05
0° – 15°
(reference value)
DP-14
Conforms
Conforms
0.97 g
13
HA17301P
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URLNorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore): http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan): http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong): http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
14
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
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