HIT HA16116FPJ, HA16116FP, HA16121FP Datasheet

HA16116FP/FPJ, HA16121FP/FPJ
Switching Regulator for Chopper Type DC/DC Converter
Description
HA16116FP/FPJ and HA16121FP/FPJ are dual-channel PWM switching regulator controller ICs for use in chopper-type DC/DC converters.
This IC series incorporates totem pole gate drive circuits to allow direct driving of a power MOS FET. The output logic is preset for booster, step-down, or inverting control in a DC/DC converter. This logic assumes use of an N-channel power MOS FET for booster control, and a P-channel power MOS FET for step-down or inverting control.
HA16116 includes a built-in logic circuit for step-down control only, and one for use in both step-down and inverting control. HA16121 has a logic circuit for booster control only and one for both step-down and inverting control.
Both ICs have a pulse-by-pulse current limiter, which limits PWM pulse width per pulse as a means of protecting against overcurrent, and which uses an on/off timer for intermittent operation. Unlike conventional methods that use a latch timer for shutdown, when the pulse-by-pulse current limiter continues operation beyond the time set in the timer, the IC is made to operate intermittently (flickering operation), resulting in sharp vertical setting characteristics. When the overcurrent condition subsides, the output is automatically restored to normal.
The dual control circuits in the IC output identical triangle waveforms, for completely synchronous configuring a compact, high efficiency dual-channel DC/DC converter, with fewer external components than were necessary previously.
Functions
2.5 V reference voltage (Vref) regulator
Triangle wave form oscillator
Dual overcurrent detector
Dual totem pole output driver
UVL (under voltage lock out) system
Dual error amplifier
Vref overvoltage detector
Dual PWM comparator
HA16116FP/FPJ, HA16121FP/FPJ
Features
Wide operating supply voltage range* (3.9 V to 40.0 V)
Wide operating frequency range (600 kHz maximum operation)
Direct power MOS FET driving (output current ±1 A peak in maximum rating)
Pulse-by-pulse overcurrent protection circuit with intermittent operation function (When overcurrent
state continues beyond time set in timer, the IC operates intermittently to prevent excessive output current.)
Grounding the ON/OFF pin turns the IC off, saving power dissipation. (HA16116: I
HA16121: I
= 150 µA max.)
OFF
Built-in UVL circuit (UVL voltage can be varied with external resistance.)
Built-in soft start and quick shutoff functions
Note: The reference voltage 2.5 V is under the condition of VIN 4.5 V.
Ordering Information
Hitachi Control ICs for Chopper-Type DC/DC Converters
Product Channel Control Functions Overcurrent
Channels Number No. Step-Up Step-Down Inverting Output Circuits Protection
Dual HA17451 Ch 1 ❍❍ ❍Open collector SCP with timer (latch)
Ch 2 ❍❍ ❍
Single HA16114 ❍❍Totem pole Pulse-by-pulse
HA16120 power MOS FET current limiter and
Dual HA16116 Ch 1 ❍❍driver intermittent operation
Ch 2 by on/off timer
HA16121 Ch 1 ❍❍
Ch 2 ——
= 10 µA max.;
OFF
2
Pin Arrangement
HA16116FP/FPJ, HA16121FP/FPJ
Notes:
S.GND
CT
RT IN(+)1 IN()1
E/O1
DB1
CL1
OUT1
P.GND
**1
1 2 3 4 5 6 7 8 9
1
10
20 19 18 17 16 15 14 13 12 11
**2
S.V
IN
Vref TIM ON/OFF IN()2 E/O2
Channel 2Channel 1
DB2 CL2 OUT2
2
P.V
IN
(top view)
1.2.Pins S.GND (pin 1) and P.GND (pin 10) have no direct internal interconnection. Both pins must be connected to ground. Pins S.V (pin 20) and P.V (pin 11) have no direct internal interconnection. Both pins must be connected to V .
IN IN
IN
3
HA16116FP/FPJ, HA16121FP/FPJ
Pin Functions
Pin No. Symbol Function
1
1 S.GND Signal circuitry* 2C 3R
T
T
Timing capacitance (triangle wave oscillator output)
Timing resistance (for bias current synchronization) 4 IN(+)1 Error amp. noninverting input (1) Channel 1 5 IN(–)1 Error amp. inverting input (1) 6 E/O1 Error amp. output (1) 7 DB1 Dead band timer off period adjustment input (1) 8 CL1 Overcurrent detection input (1) 9 OUT1 PWM pulse output (1) 10 P.GND Output stage*1 ground 11 P.V
IN
Output stage*1 power supply input 12 OUT2 PWM pulse output (2) Channel 2 13 CL2 Overcurrent detection input (2) 14 DB2 Dead band timer off period adjustment input (2) 15 E/O2 Error amp. output (2) 16 IN(–)2 Error amp. inverting input (2)* 17 ON/OFF IC on/off switch input (off when grounded) 18 TIM Setting of intermittent operation timing when overcurrent is detected
(collector input of timer transistor) 19 Vref 2.5 V reference voltage output 20 S.V
IN
Signal circuitry*1 power supply input Notes: 1. Here “output stage” refers to the power MOS FET driver circuits, and “signal circuitry” refers to all
other circuits on the IC. Note that this IC is not protected against reverse insertion, which can cause breakdown of the IC between V
2. Noninverting input of the channel 2 error amp is connected internally to Vref.
ground
2
and GND. Be careful to insert the IC correctly.
IN
4
Block Diagram
HA16116FP/FPJ, HA16121FP/FPJ
11
P.V
12
OUT2
IN
0.2 V
to S.V
13
CL2
14
DB2
[Channel 2]
from
UVL
E/O2
15
Booster control only (HA16121)
Step-down control only (HA16116)
−+EA2
16
IN()2
17
ON/OFF
18
TIM
19
Vref
10
*
OUT2
NAND
(HA16116)
NAND
OUT1
P.GND
9
OUT1
Vref
CL2
+
from UVL
5k
IN
V
++−
PWM COMP 2
0.8V
from UVL
−++
IN
V
PWM COMP 1
0.8V
Vref
5k
CL1
+
+
0.2 V
EA1
from
IN
to S.V
UVL
8
CL1
7
DB1
6
E/O1
Step-down or inverting control
[Channel 1] (HA16116/HA16121)
5
IN()1
Q
4
IN(+)1
3
R
TT
2
C
UVL
UVL
output
H
OR
H
V
L
V
OVP
Latch
S
R
T
R
1.1 V
L
Triangle wave
oscillator circuit
1.6 V
1.0 V
triangle wave
Bias current
latch reset pulse
IN IN
S.V
20
voltage
band gap
reference
2.5 V output
ON/OFF
circuit
generator
V
IN
0.8V
5k
from
UVL
1
S.GND
HA16121.
*
Note: This block is AND ( ) in the case of
5
HA16116FP/FPJ, HA16121FP/FPJ
Function and Timing Chart
Relation between triangle wave and PWM output (in steady-state operation)
C triangle wave
T
Dead band voltage
E/O Error amp output
Booster channel
output
(HA16121-
t
ON
Ch 2) only
PWM pulse output
Step-down or inverting
output
(HA16116-
Ch 1, Ch 2/
HA16121-Ch 1)
Note: On duty = t /T, where T = 1/f .
ON OSC
1.6 V typ
1.0 V typ
V (on)
IN
This pulse
is for
N-channel
t
OFF
GND (off)
power MOS
FET gate
driving.
T
This pulse
V (off)
IN
is for
P-channel
power MOS
FET gate
GND (on)
driving.
6
HA16116FP/FPJ, HA16121FP/FPJ
Determining External Component Constants (pin usage)
Constant settings are explained for the following items.
Oscillator
1.
frequency (f ) setting
OSC
S.GND
CT
RT
IN(+)1
1
2
3
4
20
19
18
17
DC/DC converter output voltage
2. setting and
IN()1
5
16
error amp usage
E/O1
6
Channel 1
15
Dead band duty
3.
and soft start
DB1
7
Channel 2
14
setting
CL1
8
13 Output stage circuit and
4.
power MOS FET
OUT1
9
12 driving method
1. Oscillator Frequency (f
) Setting
OSC
P.GND
10
11
Figure 1.1 shows an equivalent circuit for the triangle wave oscillator.
S.V
IN
Vref
TIM
ON/OFF
IN()2
E/O2
DB2
CL2
OUT2
P.V
IN
Vref UVL and
5. OVP
Setting of inter­mittent operation timing when
6. overcurrent is detected
ON/OFF pin
7.
usage
Overcurrent
8.
detection value setting
V
H
1.6 V typ
V
L
t
t
1
2
1.0 V typ
1.1 V
R
(external)
R
T
T
Vref (2.5 V)
Discharging
1 : 2
charging
C
T
I
O
I
O
C
T
(external)
C
T
Comparator
(3.3 V IC internal circuits)
R
C
Inside the IC
R
A
R
B
Figure 1.1 Equivalent Circuit for the Triangle Wave Oscillator
7
HA16116FP/FPJ, HA16121FP/FPJ
The triangle wave is a voltage waveform used as a reference in creating a PWM pulse. This block operates according to the following principles. A constant current IO, determined by an external timing resistor RT, is made to flow continuously to external timing capacitor CT. When the CT pin voltage exceeds the comparator threshold voltage VH, the comparator output causes a switch to operate, discharging a current I from CT. Next, when the CT pin voltage drops below threshold voltage VL, the comparator output again causes the switch to operate, stopping the IO discharge. The triangle wave is generated by this repeated operation.
O
Note that IO = 1.1 V/RT. Since the IO current mirror circuit has a very limited current producing ability, R should be set to 5 k (IO 220 µA).
With this IC series, VH and VL of the triangle wave are fixed internally at about 1.6 V and 1.0 V by the internal resistors RA, RB, and RC. The oscillator frequency can be calculated as follows.
f
OSC
Here,
=
t
1
t
=
2
VH V
t
= t2 = CT R
1
t3 0.8 µs (comparator delay time in the oscillator)
Accordingly,
f
OSC
Note that the value of f
1
=
t
+ t
+ t
1
2
3
C
(VH VL)
T
1.1 V/R
T
C
(VH VL)
T
(2 1) × 1.1 V/R
= 0.6 V
L
0.6
1.1
1
2t
1
OSC
+ t
1.1 C
3
may differ slightly from the above calculation depending on the amount of delay
CT RT (VH VL)
=
T
T
1.1 V
CT RT (VH VL)
==
T RT
1
+ 0.8 µs
1.1 V
[Hz]
t
1
in the comparator circuit. Also, at high frequencies this comparator delay can cause triangle wave overshoot or undershoot, skewing the dead band threshold. Confirm the actual value in implementation and adjust the constants accordingly.
T
8
HA16116FP/FPJ, HA16121FP/FPJ
2. DC/DC Converter Output Voltage Setting and Error Amp Usage
2.1 Positive Voltage Booster (VO > VIN) or Step-Down (VIN > VO > Vref)
R1 + R
VO =Use
Booster output is possible only at channel 2 of HA16121. For step-down output, both channels of HA16116 or channel 1 of HA16121 are used.
R
2
2
Vref (V)
V
O
R
1
R
V
2
R
R
O
1
2
Vref pin
Figure 2.1
Error amp.
IN()1
+
IN(+)1
IN()2
+
Vref
2.5 V
(internal connection)
CH1
CH2
2.2 Negative Voltage (VO < Vref) for Inverting Output
Use
VO = Vref
R
1
R1 + R
R3 + R
2
4
1 (V)
R
3
Channel 1 is used for inverting output on both ICs.
Vref pin
R
1
R
R
3
2
R
4
V
O
IN()1
IN(+)2
Figure 2.1 Inverting Output
Vref 2.5 V
+
Error amp
CH1
9
HA16116FP/FPJ, HA16121FP/FPJ
2.3 Error Amplifier
Figure 2.3 shows an equivalent circuit of the error amplifier. The error amplifier on these ICs is configured of a simple NPN transistor differential input amplifier and the output circuit of a constant-current driver.
This amplifier features wide bandwidth (fT = 4 MHz) with open loop gain kept to 50 dB, allowing stable feedback to be applied when the power supply is designed. Phase compensation is also easy.
Both HA16116 and HA16121 have a noninverting input (IN(+)) pin, in order to allow use of the channel 1 error amplifier for inverting control. The channel 2 error amplifier, on the other hand, is used for step­down control in HA16116 and booster control in HA16121; so the channel 2 noninverting input is connected internally to Vref.
IC internal V
IN() IN(+)
IN
E/O To internal PWM
comparator
µµ
40 A80 A
Figure 2.3 Error Amplifier Equivalent Circuit
3. Dead Band (DB) Duty and Soft Start Setting (common to both channels)
3.1 Dead Band Duty Setting
Dead band duty is set by adjusting the DB pin input voltage (VDB). A convenient means of doing this is to connect two external resistors to the Vref of this IC so as to divide VDB (see figure 3.1).
R
VDB = Vref
Duty (DB) =
Here, T =
f
×
R1 + R
V
TH
VTH V
1
OSC
V
2
(V)
2
DB
TL
⋅ ⋅ ⋅ ⋅× 100 (%) This applies when VDB > VTL.
If V
< VTL, there is no PWM output.
DB
Note: VTH: 1.6 V (Typ)
VTL: 1.0 V (Typ)
Vref is typically 2.5 V. Select R1 and R2 so that 1.0 V VDB 1.6 V.
10
HA16116FP/FPJ, HA16121FP/FPJ
V
TH
V
To Vref
V
DB
C
ST
C
T
R
1
E/O
DB
R
2
5k
PWM comparator
+ +
From UVL
0.8V
V
IN
PWM pulse output
E/O
V
DB
V
TL
Booster channel
Step-down/ inverting channel
t
OFF
On
t
On
ON
Off
Off
T
Figure 3.1 Dead Band Duty Setting
3.2 Soft Start (SST) Setting (each channel)
When the power is turned on, the soft start function gradually raises VDB (refer to section 3.1), and the PWM output pulse width gradually widens. This function is realized by adding a capacitor CST to the DB pin. The function is realized as follows.
1.6 V typ
1.0 V typ V
IN
GND V
IN
GND
In the figure 3.2, the DB pin is clamped internally at approximately 0.8 V, which is 0.2 V lower than the triangle wave VTL = 1.0 V typ.
tA: Standby time until PWM pulse starts widening. t
: Time during which SST is in effect.
B
During soft start, the DB pin voltage in the figure below is as expressed in the following equation.
t t
V
SST
= VDB
1 e,
Here,
t
= T ln
0.8
1 ,
How to select values: If the soft start time t overshoot. To prevent this, set t
0.8
T
0.8
V
DB
to a few tens of ms or above.
SST
= tA + t
t
SST
T = C
(R1 // R2)
ST
is too short, the DC/DC converter output voltage will tend to
SST
B
11
HA16116FP/FPJ, HA16121FP/FPJ
V
(voltage)
Triangle wave
V
SST
V
Starts from clamp voltage of 0.8 V
Booster channel
PWM pulse output
Step-down/ inverting channel
DC/DC converter output (positive in this example)
TH
V
TL
PWM output pulse starts to
Steady-state operation
widen
t
0.8
t
A
t
B
1.6 V
1.0 V
0 V
V
IN
0 V V
IN
0 V V
O
0 V
12
t = 0 (here IC is on) t = t
SST
Figure 3.2 Soft Start (SST) Setting
HA16116FP/FPJ, HA16121FP/FPJ
4. Totem Pole Output Stage Circuit and Power MOS FET Driving Method
The output stage of this IC series is configured of totem pole circuits, allowing direct connection to a power MOS FET as an external switching device, so long as VIN is below the gate breakdown voltage.
If there is a possibility that VIN will exceed the gate breakdown voltage of the power MOS FET, a Zener diode circuit like that shown figure 4.1 or other protective measures should be used. The figure 4.1 shows an example using a P-channel power MOS FET.
P.V
IN
Bias
circuit
Drive circuit
OUT
Gate protection resistor
Schottky barrier diode
Figure 4.1 P-channel Power MOS FET (example)
E.g.: V = 18 V
IN
Zener diode for gate protection
V
O
+
5. Vref Undervoltage Error Prevention (UVL) and Overvoltage Protection (OVP) Functions
5.1 Operation Principles
The reference voltage circuit is equipped with UVL and OVP functions.
UVL
In normal operation the Vref output voltage is fixed at 2.5 V. If VIN is lower than normal, the UVL circuit detects the Vref output voltage with a hysteresis of 1.7 V and 2.0 V, and shuts off the PWM output if Vref falls below this level, in order to prevent malfunction.
OVP
The OVP circuit protects the IC from inadvertent application of a high voltage from outside, such as if VIN is shorted. A Zener diode (5.6 V) and resistor are used between Vref and GND for overvoltage detection. PWM output is shut off if Vref exceeds approximately 7.0 V.
Note that the PWM output pulse logic and the precision of the switching regulator output voltage are not guaranteed at an applied voltage of 2.5 V to 7 V.
13
HA16116FP/FPJ, HA16121FP/FPJ
5.2 Quick Shutoff
When the UVL circuit goes into operation, a sink transistor is switched on as in the figure below, drawing off the excess current. This transistor also functions when the IC is turned off, drawing off current from the CT, E/O, and DB pins and enabling quick shutoff.
PWM output
On
Off
PWM output
PWM output on
off
1.7 2.0 2.5 5.0 7.0
PWM output off
Vref
(V)
When VIN is low
Relation of Vref to UVL and OVP
V
IN
Vref
generation
circuit
OVP
Abnormal voltage applied to Vref
Vref
2.0 V and
1.7 V detection
Internal
UVL
pulse signal line
ZD
5.6 V R
Sink
10 k
transistor
To other circuitry
Figure 5.1 Quick Shutoff
Vref
OUT OUT
14
HA16116FP/FPJ, HA16121FP/FPJ
6. Setting of Intermittent Operation Timing when Overcurrent is Detected
6.1 Operation Principles
The current limiter on this IC detects overcurrent in each output pulse, providing pulse-by-pulse overcurrent protection by limiting pulse output whenever an overcurrent is detected. If the overcurrent state continues, the TIM pin and ON/OFF pin can be used to operate the IC intermittently. As a result, a power supply with sharp vertical characteristics can be configured.
The ON/OFF timing for intermittent operation makes use of the hysteresis in the ON/OFF pin threshold voltage VON and V following pages. VBE is based-emitter voltage of internal transistor.
Note: When an overcurrent is detected in one channel of this IC but not the other, the pulse-by-pulse
current limiter still goes into operation on both channels. Also, when the intermittent operation feature is not used, the TIM pin should be set to open state and the ON/OFF pin pulled up to high level (above VON).
, such that VON – V
OFF
= VBE. Setting method is performed as described on the
OFF
V
IN
390 k
4.7 k
2.2 F
R
A
TM
R
B
ON/OFF
+
C
µ
ON/OFF
Figure 6.1 Connection Diagram (example)
6.2 Intermittent Operation Timing Chart (V
*1
4V
BE
3V
2V
V
0 V
BE
BE
BE
IC is on
V
ON/OFF
Continuous overcurrent detected
a.
Intermittent operation starts (IC is off)
b.
Overcurrent cleared (dotted line)
c.
1.V is the base-emitter voltage in transistors on the IC, and is approximately 0.7 V
Note:
BE
(see the figure 7.1).
For details, see the overall waveform timing diagram.
ON/OFF
a
2T
ON
Vref
generation
circuit
only)
c
IC is off
b
T
ON
Current
Latch
limiter
CL
S
Q
R
c
On On
Off
T
OFF
t
Figure 6.2 Intermittent Operation Timing Chart
15
HA16116FP/FPJ, HA16121FP/FPJ
6.3 Calculating Intermittent Operation Timing
Intermittent operation timing is calculated as follows.
(1) TON time (the time until the IC is shut off when continuous overcurrent occurs)
3V
BE
2V
BE
1 On duty*
×
1
VIN 2V VIN 3V
(2) T
TON = C
= C
time (when the IC is off, the time until it next goes on)
OFF
T
= C
OFF
RB ××
ON/OFF
× RB × ln1.5 × 0.4 C
ON/OFF
(RA + RB)
ON/OFF
ln
×× ln
Where, VBE 0.7 V
Note: 1. On duty is the percent of time the IC is on during one PWM cycle when the pulse-by-pulse
current limiter is operating.
From the first equation (1) above, it is seen that the shorter the time TON when the pulse-by-pulse current limiter goes into effect (resulting in a larger overload), the smaller the value TON becomes.
1
1 On duty*
≈× ××
BE BE
ON/OFF
RB
1
1 On duty*
As seen in the second equation (2), T
OFF
switched on, the IC goes on only after T
Triangle wave
PWM output (step-down channel)
On duty is the percent of time the IC is on during one PWM cycle when
Note:
the pulse-by-pulse current limiter is operating.
is a function of VIN. Further, according to this setting, when VIN is
has elapsed.
OFF
Dead band voltage
Point at which current limiter operate
t
t
ON
T
On duty = Where T = 1/f
ON
T
OSC
Figure 6.3
16
HA16116FP/FPJ, HA16121FP/FPJ
6.4 Examples of Intermittent Operation Timing (calculated values)
(1) T
ON
T = T C R
ON 1×ON/OFF×B
Here, coefficient T = 0.41×
1 On duty
from section 6.3 (1) previously.
Example: If C = 2.2 F,
ON/OFF
R = 4.7 k , and the on duty
B
of the current limiter is 75%, then T = 16 ms.
Figure 6.4 Examples of Intermittent Operation Timing (1)
(2) T
OFF
T = T C (R + R )
OFF 2×ON/OFF
Here, coefficient
2
VIN 2V VIN 3V
T = ln
from section 6.3 (2) previously.
×
BE BE
4
3
1
2
T
1
1
µ
0
ON
0 20406080100
(PWM) ON Duty (%)
B
A
0.1
T
2
0.05
Example: µ
If C = 2.2 F, R = 4.7 k ,
ON/OFF B
R = 390 k , V = 12 V,
AIN
then
T = 60 ms.
OFF
Figure 6.5 Examples of Intermittent Operation Timing (2)
0
02040
10 30
V (V)
IN
17
HA16116FP/FPJ, HA16121FP/FPJ
Example of step-up circuit
Triangle wave V
Triangle wave V
Dead band V
Dead band V
Error output V
Error output V
PWM pulse output
PWM pulse output (In case of HA16120)
(In case of HA16120) Power MOS FET
Power MOS FET drain current (I
drain current (I (dotted line shows
(dotted line shows inductor current)
inductor current) Current limiter
Current limiter pin (CL)
pin (CL)
VIN 0.2 V
VIN 0.2 V
DB
DB
D
D
CT
CT
E/O
E/O
)
)
V
V
IN
IN
V
V
TH
TH
Figure 6.6
7. ON/OFF Pin Usage
7.1 IC Shutoff by the ON/OFF Pin
As shown in the figure 7.1, these ICs can be turned off safely by lowering the voltage at the ON/OFF pin to below 2VBE. This feature is used to conserve the power in the power supply system. In off state the IC current consumption (I
) is 10 µA (Max) for HA16116 and 150 µA (Max) for HA16121.
OFF
Example of step-up circuit
V
V
IN
IN
C
C
F
F
R
R
F
F
C
C
L
L
IC
IC
OUT
OUT
F.B.
F.B.
Determined by L and V
Determined by L and V
(CL)
(CL)
Determined by RCS and R
Determined by RCS and R
R
R
CS
CS
Inductor
Inductor L
L
I
I
D
D
V
V
OUT
OUT
IN
IN
F
F
The ON/OFF pin can also be used to drive logic ICs such as TTL or CMOS with a sink current of 50 µA (Typ) at an applied voltage of 5 V. When it is desired to employ this feature along with intermittent operation, an open collector or open drain logic IC should be used.
V
IN
I
IN
R
External logic IC
Off On
Switch
+
A
R
B
C
ON/OFF
P.V
IN IN
TIM
ON/OFF
GND
S.V
To output stage
To latch
50 k
4 V
BE
Q
Q Q
HA16116,
1
2 3
To other circuitry
Vref
generation
Vref output
circuit
Q
4
On/off hysteresis circuit
HA16121
Figure 7.1 IC Shutoff by the ON/OFF Pin
18
HA16116FP/FPJ, HA16121FP/FPJ
7.2 Adjusting UVL Voltage (when intermittent operation is not used)
The UVL voltage setting in this IC series can be adjusted externally as shown below.
Using the relationships shown in the figure, the UVL voltage in relation to VIN can be adjusted by changing the relative values of VTH and VTL.
When the IC is operating, transistor Q4 is off, so VON = 3VBE 2.1 V. Accordingly, by connecting resistors RC and RD, the voltage at which UVL is cancelled is as follows.
RC + R
D
R
D
This V
VIN = 2.1 V
is simply the supply voltage at which the UVL stops functioning, so in this state Vref is still below
IN
×
2.5 V. In order to restore Vref to 2.5 V, a VIN of approximately 4.3 V should be applied.
With this IC series, V
makes use of the VBE of internal transistors, so when designing a power supply
ON/OFF
system it should be noted that VON has a temperature dependency of around –6 mV/°C.
S.V
IN
To other circuitry
Q
1
Vref
generation
Vref output
circuit
Q
2
Q
3
Q
4
On/off hysteresis circuit
Vref
P.V
IN
To output
R
C
TIM (open)
stage
To latch
ON/OFF
50 k
R
D
GND
3
2
V
OFF
1
1.4 V
V
ON
2.1 V
2.5 V V 4.5 V
IN
V
IN
0
012345
V
ON/OFF
Figure 7.2 Adjusting UVL Voltage
19
HA16116FP/FPJ, HA16121FP/FPJ
Overcurrent Detection Value Setting
The overcurrent detection value VTH for this IC series is 0.2 V (Typ) and the bias current is 200 µA (Typ) The power MOS FET peak current value before the current limiter goes into operation is derived from the following equation.
V
(RF + RCS) I
TCL
ID =
R
CS
Here VTH = VIN – VCL = 0.2 V, VCL is a voltage referd on GND.
Note that CF and RCS form a low-pass filter, determined by their time constants, that prevents malfunctions from current spikes when the power MOS FET is turned on or off.
S.V
IN
To other circuitry
1 k
200 A
OUT
(internal)
BCL
V
CL
Detection output
IN(—)
CL
+
C
F
1800 PF
I
BCL
R
F
240
G
D
R
CS
0.05
S
V
IN
This circuit is an example for step-down output use.
V
O
+
Figure 8.1 Example for Step-Down Use
The sample values given in this figure are calculated from the following equation.
0.2 V (240 + 0.05 ) × 200 µA
I
=
D
0.05
= 3.04 [A]
The filter cutoff frequency is calculated as follows.
20
2π C
1
F RF
fC = =
6.28 × 1800 pF × 240
1
= 370 [kHz]
HA16116FP/FPJ, HA16121FP/FPJ
Absolute Maximum Ratings (Ta = 25°C)
Rating HA16116FP,
Item Symbol
Supply voltage V Output current (DC) I
IN
O
HA16121FP
40 40 V
±0.1 ±0.1 A Output current (peak) IO peak ±1.0 ±1.0 A Current limiter pin voltage V Error amp input voltage V E/O input voltage V RT pin source current I TIM pin sink current I Power dissipation*
1
CL
IEA
IE/O
RT
TM
P
T
V
IN
V
IN
Vref Vref V
500 500 µA
20 20 mA
2
680*1,* Operation temperature range Topr –20 to +85 –40 to +85 °C Junction temperature TjMax 125 125 °C Storage temperature range Tstg –55 to +125 –55 to +125 °C
Note: 1. This value is based on actual measurements on a 40 × 40 × 1.6 mm glass epoxy circuit board.
At a wiring density of 10%, it is the permissible value up to Ta = 45°C, but at higher temperatures this value should be derated by 8.3 mW/°C. At a wiring density of 30% it is the permissible value up to Ta = 64°C, but at higher temperatures it should be derated by 11.1 mW/°C.
2. For the DILP package. This value applies up to Ta = 45°C; at temperatures above this, 8.3 mW/°C derating should be
applied.
HA16116FPJ, HA16121FPJ Unit
V
IN
V
IN
680*1,*
2
V V
mW
800
T
600
400
200
Permissible dissipation P (mW)
680 mW
10% wiring density
30% wiring density
447 mW 348 mW
45°C64°C85°C 125°C
0
20 40 60 80 100 120 1400−20
Operating ambient temperature Ta (°C)
21
HA16116FP/FPJ, HA16121FP/FPJ
Electrical Characteristics (Ta = 25°C, VIN = 12 V, f
= 300 kHz)
OSC
Item Symbol Min Typ Max Unit Test Conditions
Reference Output voltage Vref 2.45 2.50 2.55 V I
= 1 mA
O
voltage Line regulation Line 30 60 mV 4.5 V VIN 40 V block Load regulation Load 30 60 mV 0 IO 10 mA
Output shorting
I
OS
10 25 mA Vref = 0 V
current Vref OVP voltage Vrovp 6.2 6.8 7.0 V Output voltage
Vref/Ta — 100 ppm/°C temperature dependence
Triangle wave
oscillator block
Maximum oscillator frequency
Minimum oscillator frequency
Oscillator frequency
f
OSCmax
f
OSCmin
f
OSC
600 kHz
——1 Hz
/VIN— ±1 ±3 % 4.5 V VIN 40 V
input voltage stability Oscillator frequency
f
/Ta — ±5 % –20°C Ta 85°C
OSC
temperature stability
Dead band adjust block
Oscillator frequency f Low-level threshold
voltage High-level threshold
V
V
OSC
TLDB
THDB
270 300 330 kHz CT = 220 pF, RT = 10 k)
0.87 0.97 1.07 V Output on duty 0%
1.48 1.65 1.82 V Output on duty 100%
voltage Threshold differential
V
TDB
0.55 0.65 0.75 V VTH = VTH – V
TL
voltage Output source current I
PWM comparator
Low-level threshold voltage
block High-level threshold
Osource (DB)
V
TLCMP
V
THCMP
100 150 200 µA DB pin = 0 V
0.87 0.97 1.07 V Output on duty = 0%
1.48 1.65 1.82 V Output on duty = 100%
oltage Threshold differential
V
TCMP
0.55 0.65 0.75 V VTH = VTH – V
TL
voltage Dead band precision DBdev –5 0 +5 % Deviation when
V
= (VTL + VTH)/2,
EO
duty = 50 %
22
HA16116FP/FPJ, HA16121FP/FPJ
Electrical Characteristics (Ta = 25°C, VIN = 12 V, f
= 300 kHz) (cont)
OSC
Item Symbol Min Typ Max Unit Test Conditions
Error amp Input offset voltage V block Input bias current I
Output sink current I
Output source current
Voltage gain A Unity gain band-
IOEA
BEA
Osink (EA)
I
Osource (EA)
V
BW 3 4 MHz
2 10 mV — 0.8 2 µA 28 40 52 µA In open loop,
V
= 3 V, VO = 2 V
I
28 40 52 µA In open loop,
V
= 2 V, VO = 1 V
I
40 50 dB f = 10 kHz
width High-level output
V
OHEA
2.2 3.0 V IO = 10 µA
voltage Low-level output
V
OLEA
0.2 0.5 V IO = 10 µA
voltage Ov er c ur rent Threshold voltage V detection CL bias current I block Operating time t
TCL
BCL
OFFCL
VIN –0.22 VIN –0.2 VIN –0.18 V 150 200 250 µACL = V
IN
200 300 ns CL = VIN –0.3 V — 500 600 ns Applies only to ch 2
of HA16121
Output stage
Output low voltage V
OL1
0.7 2.2 V I
1.6 1.9 V I
= 10 mA
Osink
Applies only to HA16116
= 10 mA
Osink
Applies only to HA16121
1.0 1.3 V I
Osink
= 0 mA
Applies only to HA16121
Off state low
voltage
V
OL2
1.6 1.9 V I
Osink
= 1 mA ON/OFF pin = 0 V Applies only to ch 2 of HA16121
1.0 1.3 V I
Osink
= 0 mA ON/OFF = 0 V Applies only to ch 2 of HA16121
Output high V voltage
Off state high voltage
OH1
V
OH2
VIN –1.9 VIN –1.6 — V I V
–1.3 VIN –1.0 — V I
IN
VIN –1.9 VIN –1.6 — V I
VIN –1.3 VIN –1.0 — V I
= 10 mA
Osource
= 0 A
Osource
= 1 mA
Osource
ON/OFF pin = 0 V
= 0 A
Osource
ON/OFF pin = 0 V
23
HA16116FP/FPJ, HA16121FP/FPJ
Electrical Characteristics (Ta = 25°C, VIN = 12 V, f
= 300 kHz) (cont)
OSC
Item Symbol Min Typ Max Unit Test Conditions
Output Rise time t stage Fall time t UVL
block
VIN high-level threshold voltage
VIN low-level threshold
r
f
V
TUH1
V
TUL1
70 130 ns CL = 1000 pF (to VIN) * — 70 130 ns CL = 1000 pF (to VIN) *
3.3 3.6 3.9 V
3.0 3.3 3.6 V
voltage VIN threshold differential
V
TU1
0.1 0.3 0.5 V V
TU1
= V
TUH1
– V
TUL1
voltage Vref high-level threshold
V
TUH2
1.7 2.0 2.3 V
voltage Vref low-level threshold
V
TUL2
1.4 1.7 2.0 V
voltage Vref threshold differential
V
TU2
0.1 0.3 0.5 V V
TU2
= V
TUH2
– V
TUL2
voltage ON/OFF ON/OFF pin sink current I block IC on-state voltage V
IC off-state voltage V
ON/OFF threshold
ON/OFF
ON
OFF
V
ON/OFF
—3550µA ON/OFF pin = 5 V
1.8 2.1 2.4 V
1.1 1.4 1.7 V
0.5 0.7 0.9 V
differential voltage TIM
block
Common Operating current I
TIM pin sink current in
steady state
TIM pin sink current at
overcurrent detection
I
I
TIM1
TIM2
IN
0—10µA CL pin = V
V
TIM
IN
= 0.3 V
10 15 20 mA CL pin = VIN – 0.3 V
V
= 0.3 V
TIM
6.0 8.5 11.1 mA CL = 0 pF (to VIN) *
1, *2
block 8.5 12.1 15.7 mA CL = 500 pF (to VIN) *
11.0 15.7 20.5 mA CL = 1000 pF (to VIN) *
Off current I
OFF
0—10µA HA16116FP ON/OFF 0 120 150 µA HA16121FP pin = 0 V
Notes: 1. CL is load capacitor for Power MOS FET’s gate, and CL = 1000 pF to GND in the case of
HA16121 – ch 2.
2. C
in channel 2 of HA16121 is connected to GND.
L
1, *2
1, *2
1, *2
1, *2
24
Characteristic Curves
Reference Voltage Block (Vref)
HA16116FP/FPJ, HA16121FP/FPJ
Reference Voltage vs. Power Supply Input Voltage
3
Ta = 25°C R
= 390 k
A
(Between the V and ON/OFF pins)
2
UVL release: 3.6 V UVL operate: 3.3 V
IN
2.5 V
1
Reference voltage Vref (V)
3.3 3.6
4.3
01234540
Power supply input voltage V
(V)
IN
Vref Load Regulation
3.0
2.5
2.0
1.50
Reference voltage Vref (V)
0
10 20 30
Output current I
2.54
Vref Temperature Characteristics
= 12 V
V
IN
I
(Vref) = 1 mA
O
20 0 20 40 60 80 100 Ambient temperature Ta (°C)
Short circuit current
Reference voltage Vref (V)
O sink
2.52
2.50
2.48
2.46
(mA)
85
UVL (Low Input Voltage Malfunction Prevention) Block
Hysteresis Voltage Temperature Characteristics
4.5
4.0
3.5
UL voltage (V)
IN
V
3.0
2.5
20 0 20 40 60 80 100 Ambient temperature Ta (°C)
High threshold voltage
Hysteresis
Low threshold voltage
25
HA16116FP/FPJ, HA16121FP/FPJ
Triangle Wave Oscillator Block
RT pin Output Current Characteristics
1.1
1.0
0.9
pin voltage (V)
T
R
0.8 0 100 200 300 400 500
Reccomended
usage range
10 (R
100 k) 330 (RT 3 k)
T
(µA)
I
RT
C
100
T
70 50
30
(k)
20
T
R
10
7
00.1 µF
5
, RT Values (VIN = 12V) vs. Oscillator Frequency
4700 pF
2200 pF
1000 pF
Sawtooth Wave Amplitude vs. Oscillator Frequency
2.0 V
TH
1.5
Sawtooth wave amplitude
V
1.0
Note: Due to these characteristics, the dead
0.5
Sawtooth wave level (V)
band and PWM comparator threshold voltages change at high frequencies.
0 100 200 300 400 500 600
(DC)
C
T
= 47 pF
100 pF
220 pF
470 pF
TL
f
(kHz) (linear scale)
OSC
600 kHz
3
10 20 30 50 70 100 200 300 500 700 1 M
Oscillator frequency f
OSC
(kHz)
Oscillator Frequency Temperature Stability
+10
(f/fo) (%)
Frequency variation
10
VIN = 12 V
+5
A: f B: f
= 300 kHz
OSC
= 600 kHz
OSC
B
5
0
A
A
B
85
20 0 20 40 60 80 100 Ambient temperature Ta (°C)
26
Error Amplifier Block
HA16116FP/FPJ, HA16121FP/FPJ
Open Loop Gain Characteristics
A
VO
(dB)
VO
60
40
φ
20
Open loop gain A
0
1 k 3 k 10 k 30 k 100 k 300 k 1 M 3 M 10 M
Error amplifier input frequency fIN (Hz)
Common Mode Input Characteristics
+100
0
(mV)
O
Output offset V
100 Vref
200
EA
+
+
V
I
0
45
90
Phase delay φ (deg.)
135
BW
180
V
O
On Duty Characteristics
100
80
60
(%)
1
40
On duty*
20
Notes: 1. The percentage of a single timing cycle
On Duty Characteristics
Step-down PWM output (HA16116-1, 2ch HA16121-1ch)
0
0.8 1.0 1.2 1.4 1.6 1.8 0.8 1.0 1.2 1.4 1.6 1.8
The percentage of a single timing cycle during which the output is low.
300
01234
Input voltage VI (V)
100
80
= 50 kHz
f
OSC
300 kHz
600 kHz
(%)
2
60
40
On duty*
20
0
VDB or V
(V) VDB or V
E/O
2.
On Duty Characteristics
Boost PWM output (HA16121-2 ch)
600 kHz
300 kHz
= 50 kHz
OSC
f
(V)
E/O
during which the output is high.
27
HA16116FP/FPJ, HA16121FP/FPJ
,,,
,,, ,,, ,,,
,,,
Other Characteristics
Current Limiter Level Temperature Characteristics
220
(mV)
210
TH
200
85°C
190
Detection voltage V
180
20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C)
IIN vs. VIN Characteristics
40
f
= 300 kHz
OSC
On duty: 50% Ta = 25°C
Maximum rating at
30
(mA)
IN
Load capacitance:
Ta = 25°C: 680 mW
1000 pF/ch
20
Current dissipation I
10
0
500 pF/ch
No load
10 20 30 40
Power supply voltage VIN (V) I
Output Drive Circuit Power MOS FET
800
600
400
peak (mA)
O
I
200
0
Note: The solid line is data measured with discrete
Direct Drive ability Data
VIN = 12 V f
= 130 kHz
OSC
2SJ176
2SJ214
1000 2000 3000 4000
capacitances (for each channel of HA16116).
2SJ216
Ciss (pF)
IC On Voltage and Off Voltage Temperature Characteristics
4
3
(V)
OFF
2
or V
ON
V
1
0
20 0 20 40 60 80 100
Output pin (Output Resistor) Characteristics
12
11
10
)
DC
9
(V
O
VON on voltage (about 6mV/°C)
off voltage
V
OFF
(about 4mV/°C)
Output high voltage when on
Output high voltage when off (channels 1 and 2 in the HA16116 and channel 1 in the HA16121)
85°C
V
GS
(P-channel Power MOS FET)
3
Output voltage V
2
1
0
Output low voltage when on
Output low voltage when off (channels 1 and 2 in the HA16121)
2468
O sink
or I
O source
(mA)
10
V
GS
(N-channel Power MOS FET)
Gate Drive Waveforms for the 2SJ214
Drive voltage: 5 V/div
Drive current: 200 mA/div
*
Note: * Measured using a current probe.
(The boost channel (channel 2 in the HA16121) load is with respect to ground, and has almost identical characteristics.)
650 nsec/div
28
Application Examples (1)
HA16116FP/FPJ, HA16121FP/FPJ
0.05
1800p
24k
4700p
240
+
10k
2.2
33k
100k
2SJ214
4.7
1 A
output
20k
+
+5 V
20k
5 V
1 A
output
+
470
+
470
330µH
Step-down output
HRP24
IN
*
NAND
(HA16116)
OUT2
IN
to S.V
from
−+EA2
0.2 V
+
UVL
CL2
IN
V
Vref
from UVL
++−
5k
PWM COMP 2
0.8V
from UVL
IN
V
+
Inverting output
330µH
NAND
OUT1
Vref
−++
PWM COMP 1
0.8V
HRP24
2SJ214
0.051800p
240
4.7
OUT1 P.GNDDB1 CL1E/O1IN(+)1C
IN
0.2 V to S.V
CL1
+
2.2
+
5k
from
UVL
33k
10k4700p
EA1
+
)1
100k
24kR32k
12k
R4
12k
12k
A
B
390k
CTM2.2
4.7k
R
R
Vref TIM ON/OFF IN()2 E/O2 DB2 CL2 OUT2 P.V
19 18 17 16 15 14 13 12 11
IN
S.V
20
0.1
Cref
IN
V
12V
HA16116FP is used in a ±5 V output power supply, with a +12 V input.
UVL
UVL
2.5 V
output
H
output
band gap
L
reference
H
V
L
V
voltage
generation
ON/OFF
OR
OVP
circuit
IN
V
Q S
R
Latch
Triangle wave
Triangle wave
1.6 V
1.0 V
oscillator circuit
5k
0.8V
R
1.1 V
Bias current
Latch reset pulse
from
UVL
T
2 3 4 5 6 7 8 9 10
1
R
S.GND IN(
T
T
R
10k220p
T
T
C
pF (p)
R :
C : µF (unless otherwise specified)
The IC is the HA16116.
Units:
29
HA16116FP/FPJ, HA16121FP/FPJ
Overall Waveform Timing Diagram (for Application Examples (1))
12 V
V
IN
0 V
V ,
E/O
TIM
V
ON/OFF
On
2.1 V
1.4 V
On
On
On
On
OffOffOffOff
V , V
V
E/O
V ,
CT
V
DB
TIM ON/OFF
,
0 V
2.1 V
(V)
3.0
2.0
1.0
2.8 V
V
V
CT
triangle wave
Off
V
DB
0.0
12 V
V
CL
11.8 V
0 V
Pulse-by-pulse current limiter operates
12 V
V
*1
OUT
PWM pulse
0 V
DC/DC output (example for positive voltage)
IC operation states
Power
Soft start Steady-state
operation
IC on
Overcurrent detected; intermittent operation
supply on
Note: 1.This PWM pulse is on the step-down/inverting control channel.
The booster control channel output consists of alternating L and H of the IC on cycle.
Overcurrent cleared; steady-state operation
Power supply off, IC off
Quick shut-off
30
HA16116FP/FPJ, HA16121FP/FPJ
Application Examples (2) (Some Pointers on Use)
1. Inductor, Power MOS FET, and Diode Connections
1. Booster specification 2. Step-down specification V
IN
C
F
V
IN
C
L
R
Applicable only
R
CS
F
to channel 2 of HA16121FP
V
OUT
GND
FB
V
IN
V
C
F
IN
C
L
OUT
O
GND
4. Negative booster specification (Flyback transformer)3. Inverting specification
R
Applicable to
R
CS
F
HA16116FP and to channel 1 of HA16121FP
V
O
FB
V
IN
GND
C
OUT
C
F
L
R
Applicable only
R
CS
F
to channel 1
V
O
V
GND
FB
IN
OUT
C
F
C
L
R
Applicable only
R
CS
F
to channel 1
FB
Vref
2. Turning Output On and Off while the IC is On
To turn only one channel off, ground the DB pin
1. When only one channel is to be used, or the E/O pin. In the case of E/O, however, there will be no soft start when the output is turned back on.
DB
E/O
OFF
2. the channel not used should be connected as follows.
V
Connect C
to VIN.
L
Ground IN(+) and IN(). Leave other pins open.
GND
IN
C
L
+
IN
IN
31
HA16116FP/FPJ, HA16121FP/FPJ
Application Examples (3)
24k
0.05
1800p
+
10k
4700p
240
2.2
33k
+
+12 V
5.1 k
output
1.3 k
+
12 V
output
470
+
Boost output
HRP24
4.7
470
2SK1094
330µH
IN
P.V
*
NAND
(HA16116)
OUT2
IN
to S.V
DB2 CL2 OUT2
E/O2
from
100k
−+EA2
IN()2
0.2 V
+
UVL
CL2
IN
V
Vref
from UVL
++−
5k
PWM COMP 2
0.8V
NAND
from UVL
−++
IN
V
OUT1
+
Inverting output
330µH
Vref
CL1
+
5k
PWM COMP 1
0.8V EA1
+
0.2 V
from
UVL
10987654321
IN
to S.V
2SJ214
P.GNDOUT1CL1DB1
E/O1
IN()1IN(+)1
4.7
100k
0.05
240
1800p
R4
2.2
+
24k
22k
R3
1.2k
33k
10k
12k
12k
4700p
Power supply using the HA16121FP: +5 V input, +12 and 22 V outputs
32
RB4.7k
TM
2.2
C
UVL
output
A
R
390k
TIM ON/OFF
UVL
Vref
IN
H
OR
H
V
L
V
OVP
L
S.V
20 19 18 17 16 15 14 13 12 11
0.1
Cref
IN
V
5V
band
2.5 V
gap
reference
circuit
voltage
generation
ON/OFF
IN
V
Q
Latch
S
R
Triangle wave
Triangle wave
1.6 V
1.0 V
generation circuit
5k
0.8V
T
R
1.1 V
Bias current
Latch reset pulses
from
UVL
T
R
T
C
S.GND
RT10k
CT220p
pF (p)
R :
C : µF (unless otherwise specified)
The IC is the HA16121.
Units:
Package Dimensions
20
HA16116FP/FPJ, HA16121FP/FPJ
Unit: mm
12.6
13 Max
11
5.5
1
0.80 Max
1.27
*0.42 ± 0.08
± 0.06
0.40
*Dimension including the plating thickness
Base material dimension
10
0.12
0.10 ± 0.10
0.15
M
2.20 Max
7.80
0.20 ± 0.04
*0.22 ± 0.05
0.70 ± 0.20
Hitachi Code JEDEC EIAJ Mass
(reference value)
+ 0.20 – 0.30
1.15
0° – 8°
FP-20DA — Conforms
0.31 g
33
HA16116FP/FPJ, HA16121FP/FPJ
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223
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Hitachi Europe GmbH Electronic components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322
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Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
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