HIT HA16664AFP, HA16654APS, HA16664APS Datasheet

HA16654A, HA16664A Series

PWM Controlled Switching Regulator

The HA16654A and HA16664A are PWM control switching regulator ICs which drive a power MOSFET
at high speed and high frequency. The standby current is limited to as small as 1.5 mA (typ). These
devices incorporate totem pole circuits suited for high-speed push-pull operation at the output stage,
accomplishing high-speed switching with rising time tr = 80 ns (typ) and falling time tf = 40 ns (typ) at 20
V swing.

Functions

• Reference voltage circuit

• Triangular waveform oscillation circuit

• PWM comparator circuit

• Low-input malfunction protection circuit

• Output drive circuit

• Soft start and quick shut down

Features

• High speed switching: tr = 80 ns, tf = 40 ns (typ) when use exernal driver circuit

• High frequency operation:

HA16654A (f = 100 kHz to 500 kHz)
HA16664A (f = 100 kHz to 200 kHz)
Low power dissipation : 2 mA max in standby state

• 5 V reference voltage

• Low-input malfunction protection (High threshold voltage: 10 V Typ, Low threshold voltage: 8 V

Typ)

• Adjustable dead band width

• Enlarged output pulse width control range (0 to 80%)

• Soft start and quick shut down functions

• Single output: totem pole

HA16654A, HA16664A Series

Ordering Information

Type No. Operating Frequency Package

HA16654APS 100 kHz to 500 kHz DP-8
HA16654AFP FP-14DA
HA16664APS 100 kHz to 200 kHz DP-8
HA16664AFP FP-14DA

Pin Arrangement

• HA16654APS,HA16664APS

• HA16654AFP,HA16664AFP

NC
NC

1

C

T

2

R

T

3

V

ref

4

V

IN

8

EI

C

T

DB

7

GND

6

OUT

5

R

T

V

ref

V

IN

NC

(Top view)

Table 1 Pin Function

Symbol Pin Name

C

T

R

T

Vref Reference voltage
V

IN

EI Error input
DB Dead band
GND Ground
OUT Driver output

Timing capacitor
Timing resistor

Input voltage

1
2
3
4
5
6
7

(Top view)

14
13
12
11
10

9
8

NC
NC
EI
DB
GND
OUT
NC

2

Block Diagram

2

R

T

1

C

T

3

Vref

V

4

IN

Oscillator

To internal
circuitry

Reference
Regulator

To under
voltage
lockout

EIDB

7 8

To Vref

Under Voltage
Lockout
(Hysteresis Type)

ERROR

INPUT

HA16654A, HA16664A Series

PWM
Compa­rator

V

IN

Output Stage

5

6

OUT

GND

DB

C

T

OUT

Figure 1 Waveform Timing

3

HA16654A, HA16664A Series

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit Notes

Power supply voltage V
Collector current (Push-pull) I
Comparator input voltage V
RT input current I
Power dissipation P

IN

O

COM

RT

T

Operation temperature range Topr –20 to +85 °C
Storage temperature range Tstg –55 to 125 °C

Notes: 1. Ta ≤ 45°C, if Ta > 45°C, derate by 8.3 mW/°C

2. Tjmax = θj–a • Pcmax + Ta (θj–a:Thermal resistance between junction and atmosphere at set
board use)

The wiring density and the material of the set board must be chosen for thermal conductance of

efficacy board.

Electrical Characteristics

+40 V
20 mA
Vref + 0.3 V
1mA
680 mW 1, 2

HA16654APS/AFP (Ta = 25°C, VIN = 20 V, CT = 220 pF, RT = 27 kΩ at f 500 kHz)

Voltage Reference

Item Symbol Min Typ Max Unit Test Condition

Output voltage Vref 4.75 5.00 5.25 V
Line regulation Line — — 100 mV VIN = 7.3 to 11 V

—10 25mV VIN = 11 to 40 V
Load regulation Load — 5 16 mV IO = 0 to 10 mA
Temperature stability V
Short circuit current I

RTC

OS

— –26 — ppm/°C

10 35 — mA Vref = 0 V

4

HA16654A, HA16664A Series

Oscillator

Item Symbol Min Typ Max Unit Test Condition

Maximum frequency f
Minimum frequency f
Initial accuracy f
Voltage stability f

max

min

dev

av

PWM

Item Symbol Min Typ Max Unit Test Condition

Maximum duty cycle D

u 80 — — %

Duty cycle accuracy Ddev — ±1 ±6% R
Input bias current I

B

Output Driver

Item Symbol Min Typ Max Unit Test Condition

Sink current at Vin low I
Output low level V
Output high level V
Output rising time t
Output falling time t
High level threshold V
Low level threshold V
Hysteresis width V

(Low) 0.6 1.5 — mA VIN = 6 V, V

OS

OL

OH

r

f

THH

THL

HRS

500 — — kHz CT = 220 pF

— — 100 kHz CT = 560 pF

—— ±10 %

— –0.02 ±1.0 kHz/V VIN = 11 to 40 V

= 13 kΩ, R2 = 39 kΩ

1

— — 2.0 µAV

= 4 V, VDB = 0 V or

E1

V

= 0 V, VDB = 4 V

E1

OUT

— 0.86 1.4 V IO(sink) = 10 mA

VIN – 2.2 — — V IO(source) = 10 mA

— 80 150 ns Figure 3

— 40 100 ns Figure 3

9 10 11 V UVL characteristics

7.3 8 9 V UVL characteristics

1.5 2.0 2.5 V UVL characteristics

= 0.4 V

Total Current

Item Symbol Min Typ Max Unit Test Condition

Standby current I
Operation current V

CCS

CCL

— 1.5 2.0 mA Figure 2

5.0 9.0 13.0 mA R1 = 13 kΩ, R2 = 29 kΩ,
V

= 20 V

IN

Figure 2

5

HA16654A, HA16664A Series

13 kΩ R

39 kΩ

h of 2SD667 and 2SD647 is defined as 60 min and 200 max

R

1

2

FE

27 k

Ω

220 pF

V

IN

OUT

GND

EI
DB
R
G

T

V

refVIN

GND

A

OUT

Figure 2 I

2SD667

2SB647

2SD667

15 Ω

2SB647

• I

CCS

15Ω

2,200 pF

Dummy Load

(MOS FET)

2,200 pF

Measurement Circuit

CCL

80%

Output

20%

Dummy Load
(MOS FET)

I

I

CCL

I

IN

CCS

t

r

V

IN

t

f

20

V

IN

Figure 3 tr , tf Measurement Circuit

HA16664APS/AFP (Ta = 25°C, VIN = 20 V, CT = 560 pF, RT = 82 kΩ at f 100 kHz)

Voltage Reference

Item Symbol Min Typ Max Unit Test Condition

Output voltage Vref 4.75 5.00 5.25 V
Line regulation Line — — 100 mV VIN = 7.3 to 11 V

—10 25mV VIN = 11 to 40 V
Load regulation Load — 5 16 mV IO = 0 to 10 mA
Temperature stability V
Short circuit current I

6

RTC

OS

— –26 — ppm/°C

10 35 — mA Vref = 0 V

HA16654A, HA16664A Series

Oscillator

Item Symbol Min Typ Max Unit Test Condition

Maximum frequency f
Minimum frequency f
Initial accuracy f
Voltage stability f

max

min

dev

av

PWM Comparator

Item Symbol Min Typ Max Unit Test Condition

Maximum duty cycle D

u 80 — — %

Duty cycle accuracy Ddev — ±1.0 ±6% R
Input bias current I

B

Output Driver

Item Symbol Min Typ Max Unit Test Condition

Sink current at Vin low I
Output low level V
Output high level V
Output rising time t
Output falling time t
High level threshold V
Low level threshold V
Hysteresis width V

(Low) 1.0 1.5 — mA VIN = 6 V, V

OS

OL

OH

r

f

THH

THL

HRS

200 — — kHz CT = 220 pF

— — 100 kHz CT = 560 pF

—— ±10 %

— –0.02 ±1.0 kHz/V VIN = 11 to 40 V

= 11 kΩ, R2 = 39 kΩ

1

— — 2.0 µAV

= 4 V, VDB = 0 V or

EI

V

= 0 V, VDB = 4 V

EI

OUT

— 0.86 1.4 V IO(sink) = 10 mA

VIN – 2.2 — — V IO(source) = 10 mA

— 80 300 ns Figure 5

— 40 200 ns Figure 5

9 10 11 V UVL characteristics

7.3 8 9 V UVL characteristics

1.5 2.0 2.5 V UVL characteristics

= 0.4 V

Total Current

Item Symbol Min Typ Max Unit Test Condition

Standby current I
Operation current V

CCS

CCL

— 1.5 2.0 mA Figure 4

3.0 5.0 7.0 mA R1 = 11 kΩ, R2 = 39 kΩ,
V

= 20 V

IN

Figure 4

7

HA16654A, HA16664A Series

11 k Ω R

39 kΩ

A

V

V

ref

27 k

Ω

1

EI

IN

DB
R

R

2

T

OUT

G

GND

220 pF

h of 2SD667 and 2SD647 is defined as 60 min and 200 max

FE

Figure 4 I

V

IN

2SD667

OUT

2SB647

GND

2SD667

15 Ω

2SB647

• I

CCS

15Ω

Dummy Load

(MOS FET)

2,200 pF

Measurement Circuit

CCL

80%

Output

20%

I

I

t

CCL

I

CCS

r

IN

2,200 pF

Dummy Load
(MOS FET)

V

IN

t

f

20

V

IN

Figure 5 tr • tf Measurement Circuit

8

Characteristic Curves

HA16654A, HA16664A Series

5.10

Vref Output Voltage vs. Temperature

5.00

4.90

Ref Output Voltage Vref (V)

4.80
–30 0 50 100

Ambient Temperature T a (°C)

Quick Shutdown Time vs. Soft Start Capacitance

25

Ta = 25°C

20

15

6.0
Ta = 25°C

5.0

4.0

3.0

2.0

Vref Rise Characteristics

Ref Output Voltage Vref (V)

1.0

010203040

Input Voltage V (V)

Soft Start Time vs. Soft Start Capacitance

25

Ta = 25°C

IN

20

15

10

5

Quick Shutdown Time (ms)

Vref

HA16654A

13 kΩ

or
HA16664A

D.B

C

39 kΩ

S

200 406080100

Soft Start Capacitance C ( F)

µ

S

10

Soft Start Time (sec)

5

Vref

HA16654A

13 kΩ

or
HA16664A

D.B

C

39 kΩ

S

200 406080100

Soft Start Capacitance C ( F)

µ

S

9

HA16654A, HA16664A Series

Dead Band Voltage in PWM Comparator (HA16654A)

100

90
80
70
60
50
40
30

Pulse Duty Cycle (%)

20
10

0 0.6 0.7 0.8 0.9

∆f/f vs. Ambient Temperature (HA16654A) ∆f/f vs. Ambient Temperature (HA16664A)

+10

f 500 kHz≅

R = 27 k

T

( )

C = 220 pF

T

0

f/f (%)∆

–10

Pulse Duty Cycle vs.

f 500 kHz≅

Dead Band Voltage (V)

Ω

f 100 kHz≅

R = 150 k

T

( )

C = 330 pF

T

f 300 kHz≅

Ω

f 300 kHz≅

R = 56 k

( )

C = 220 pF

V = 20 V

IN

f 100 kHz≅

T
T

Dead Band Voltage in PWM Comparator (HA16664A)

100

90
80
70
60
50
40
30

Pulse Duty Cycle (%)

20
10

0 0.6 0.7 0.8 0.9

+10

0

f/f (%)∆

Ω

–10

Pulse Duty Cycle vs.

f 100 kHz≅

f 200 kHz≅

Dead Band Voltage (V)

V = 20 V

IN

f 100 kHz≅

R = 150 k

T

( )

C = 330 pF

T

f 200 kHz≅

R = 95 k

( )

C = 220 pF

Ω

Ω

T
T

10

–20

0 20406080–20

Ambient Temperature T a (°C)

–20

0 20406080–20

Ambient Temperature T a (°C)

HA16654A, HA16664A Series

Pulse Duty Cycle vs. Ambient Temperature (HA16654A)

60

50

40

Pulse Duty Cycle (%)

30

–20

Pulse Duty Cycle vs. Ambient Temperature (HA16664A)

60

50

40

Pulse Duty Cycle (%)

30

–20

C = 220 pF

T

( )

R = 27 k
f 500 kHz≅

0 20406080

Ambient Temperature T a (°C)

C = 330 pF

( )

R = 150 k
f 100 kHz≅

0 20406080

Ambient Temperature T a (°C)

Ω

T

T
T

Ω

C = 330 pF

T

( )

R = 150 k

T

f 100 kHz≅

C = 220 pF

T

( )

R = 95 k

T

f 200 kHz≅

∆ton/ton vs. Ambient Temperature (HA16654A)

+10

Ω

0

ton/ton (%)∆

–10

–20

+10

0

ton/ton (%)∆

Ω

–10

–20

020406080

Ambient Temperature T a (°C)

∆ton/ton vs. Ambient Temperature (HA16664A)

C = 330 pF

T

( )

R = 150 k

T

f 100 kHz≅

020406080

Ambient Temperature T a (°C)

Ω

C = 220 pF

T

( )

R = 27 k

f 500 kHz≅

C = 330 pF

( )

R = 150 k
f 100 kHz≅

Ω

T

T
T

C = 220 pF

T

( )

R = 95 k

T

f 200 kHz≅

Ω

Ω

11

HA16654A, HA16664A Series

OSC Frequency vs. Timing Resistor (HA16654A) OSC Frequency vs. Timing Resistor (HA16664A)

500 k

C =220 pF

T

C = 560 pF

T

200 k

200 k

150 k

C = 560 pF

T

C = 220 pF

T

Osc Frequency (Hz)

100 k

10 k 20 k 50 k 100 k 200 k

Timing Resistor R (k )TΩ

Formula for the oscillation frequency f
f = 1 / [ {C

(RT + 1 × 103)(a ⋅ RT + b) / (Vref − VBE)} + 100 × 10−9]

T

CT : Timing capacitor (F)
R

: Timing resistor (Ω)

T

Vref : Reference voltage 5.0 (V) (Typ)
V

: Base-emitter voltage 0.65 (V) (Typ)

BE

The following table show empirical values of
a and b for different values of C

C

(pF)

T

220
560

a

−2.30 × 10

−8.37 × 10

.

T

−6

−6

Also,
f ≈ 4.35 / (C

⋅ RT)

T

b

1.247

1.575

Osc Frequency (Hz)

100 k

10 k 20 k 50 k 100 k 200 k

Timing Resistor R ( )TΩ

−2

−4

−6

−6

a (10 )

a

b

−8

−10

200 300 400 500 600

C (pF)

T

1.2

1.3

b

1.4

1.5

1.6

12

VIN Bias Point

HA16654A, HA16664A Series

HA16654A

(f 500 kHz)≅

Ta = 25°C

10

8

6

IN

I (mA)

4

2

0

Back up supply voltage

Quick shutdown
area

Soft start area

1/R

IN

Low input
malfunction prevention area

108203040Va

V (V)

IN

Primary Control Forward Converter System

AC

R.F.I

Filter

Soft Start Capacitor

0.47 F

µ

R

1

13 k
(11 k )ΩΩ

R

39 k

2

Ω

V

R

IN

HA16664A

10

8

6

IN

I (mA)

4

2

0

B

(f 100 kHz)≅

Ta = 25°C

Back up supply voltage

Quick shutdown
area

1/R

Soft start area

Low input
malfunction prevention area

108203040Va

V (V)

IN

IN

V

OUT

+

51 kΩ

220 pF C

(330 pF)

Error

Input

Band

Dead

HA16654A

(HA16664A)

T

T

C

R

T

R

OUT

GND

IN

V

Vref

27 k (150 k )Ω

T

Ω

D667

B647

Power MOS FET

HA17431

+

13

HA16654A, HA16664A Series

Package Dimensions

9.6

10.6 Max
58

1

0.89

4

1.3

Unit: mm

6.3

7.4 Max

2.54 ± 0.25

14

1

1.27

1.27 Max

10.06

10.5 Max

1.42 Max

0.1 Min

0.48 ± 0.10

8

5.5

7

5.06 Max

2.54 Min

2.20 Max

0° – 15°

Hitachi Code
JEDEC
EIAJ
Mass

7.80

0.20 ± 0.04

*0.22 ± 0.05

0.70 ± 0.20

7.62

0.25

(reference value)

+ 0.20
– 0.30

1.15

0° – 8°

+ 0.10
– 0.05

DP-8
Conforms
Conforms

0.54 g

Unit: mm

*0.42 ± 0.08

0.40 ± 0.06

*Dimension including the plating thickness

Base material dimension

14

0.12

0.10 ± 0.10

0.15

M

Hitachi Code
JEDEC
EIAJ
Mass

(reference value)

FP-14DA
—
Conforms

0.23 g

HA16654A, HA16664A Series

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

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15