HIT HA13705C Datasheet

HA13705C
IPIC (Intelligent Power IC) High Side Solenoid Driver
ADE-207-207 (Z)
1st Edition
July 1996
Description
The HA13705C is high side power driver IC with protectors and diagnostic function. The device is especially designed to switch inductive loads.
Power MOS source follower output (2 A)
With Over Voltage Shut Down circuit (OVSD)
With Over Current protector circuit (OCSD)
With Over Temperature Shut Down circuit (OTSD)
With diagnostic circuit and status output
With fail safe function under input open circuit condition
With low voltage inhibit circuit (LVI)
With output negative voltage clamp circuit
Features
Protected against 60 V load dump condition
Low RON (0.17 Ω Typ)
Wide operating supply voltage range (VDD = 7 V to 25 V)
High sustaining voltage (–25 V)
Protected against reverse supply voltage (–13 V)
Protected against short circuit condition
Input compatible with TTL, LS-TTL, or 5 V CMOS
HA13705C
Pin Arrangement
HA13705C
12345
V
GND OUT
DD
STATUSINPUT
(Top View)
2
Block Diagram
HA13705C
V
DD
3
INPUT
2
STATUS
4
LVI
Logic
Charge
Pump
TSD
160
175
1
OVSD
OSC. Latch
Band
Gap Ref.
Diagnostic
Voltage
Clamp
Current
Sense
+ —
Vref
Open, Short to
Detector
V
DD
OUT
5
3
GND
HA13705C
Truth Table
Mode In Out Status
Normal L L L
HHH
Load short L L L
HL L
Load open L H H
HHH
Short to V
OTSD
OVSD
LVI
DD
*1
*2
*3
L : Low level (0.8 V) H : High level (2.0 V) Notes: 1. OTSD: Over temperature shut down
2. OVSD: Over voltage shut down
3. LVI: Low voltage inhhibit
LHH HHH
LLL HL L
LLH HL H
LLH HL H
4
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit Notes
Continuous supply voltage V Transient supply voltage V Input voltage V
DD
DD
IN
Output voltage Vout –25 to V Status voltage Vs –0.3 to +15 V Output current Iout A 3, 4 Status current Is 5 mA Power dissipation P Package thermal resistance/
T
θj–c 5 °C/W
Junction to case Package thermal resistance/
θj–a 70 °C/W
Junction to air Junction temperature range Tj –40 to 150 °C Storage temperature range Tstg –55 to +150 °C
Notes: 1. Recommended operating voltage:
V
= 7 to 16 V (Normal)
DD
16 to 25 V (Jump up start 5 minutes MAX) –13 V (Reverse Battely 5 minutes MAX)
2. Load dump condition
–13 to 35 V 1 60 V 2 –0.3 to 30 V
DD
V3
—W5
HA13705C
60 V
14 V
Tr
V = 14 + 46 e Tr = 1ms
t
0.25
5
HA13705C
)
3. Output Transistor ASO (Reference Data)
I
(A)
D
10
7
10ms
1ms
5
Limited area
4
by over current
3
protection
2
1
0.5
0.1 2 5 10 20
30405060
VDS (V
4. Internally limited
5. Maximum power dissipation (P P
(Max) = (Tjopr(Max) – Tambient) / (θj-c + θc-a)
T
(Max)) can be defined as:
T
θc-a: Thermal resistance between case and air (Depend on heat sink size)
6
HA13705C
Electrical Characteristics (Ta = 25°C, VCC = 12 V ±10%)
Item Symbol Min Typ Max Unit Test Conditions Pin Note
Output R (ON) R
DS(ON)
0.17 0.36 IO = 2 A
(@Tj = –40 to 150°C)
Operating supply
V
DD
7—25V 3
voltage range Quiescent current I
Output leakage current I
I
DD1
DD2
LEAK
0.3 mA VIN = 0 V, Vout = 0 V 3 — 6.0 10.0 mA VIN = 5.5 V, Vout = open 3 — 0.1 mA VDD = 25 V, VIN = 0 V,
Vout = 0 V
Input threshold voltage V
Input current I
Propagation delay time t
V
IL
I
IH
d(ON)
t
r
t
d(OFF)
IL
IH
0.8 V 2
2.0 V 2 –10 60 µAVIN = 0.8 V 2 50 300 µAVIN = 5.0 V 2 ——50µsIO = 1 A 2, 5 ——90µs5 ——50µs 2, 5
Tf ——50µs5
Open det. threshold
I
OD
2 10 100 µs 4, 5
current Current limiter operating
I
CS
3.0 4.3 7.5 A 5
level LVI operating level L.V.I 5 6 V 3 Over
voltage
Operating level
OVSD 26 29 33 V 3
shut down
Hysteresis VHYS 0.15 0.5 1.5 V 3 Output sustain voltage V Over
temper-
Operating
level
(SUS)
OTSD 150 175 °C51
–25 V Iout = 20 mA 5
ature shut down
Hysteresis THYS 15 °C51 Status on voltage V Status leakage current I
SL
S(Leak)
0.4 V IS = 1 mA 4 –10 100 µAVS = 5.0 V 4
Notes: 1. Design parameter only (no test)
5
5
7
HA13705C
Solenoid Drive Application and it’s Waveform
V
DD
C1
3
STATUS
4
VCC (5 V)
R2
INPUT
INPUT
R1
2
HA13705C
OUTPUT
5
1
GND
R1 : Input series resistance to protect CMOS driver. R2 : Pull up resistance at status output. C1 : The capacitor to compensate the inductance at V D1, DZ1 : for Reverse voltage clamp
Normal
5 V 0
I
CS
D1
DZ1
Output short to GND
DD
line.
Iout
Vout
V (SUS)
STATUS
0
1.8 ms (Typ)
V
DD
0
V
CC
0
8
Package Dimensions
HA13705C
Unit: mm
17.0 ± 0.3
15.2 ± 0.3
1
1.7
3.4
10.0 ± 0.3
7.0 ± 0.3
5
φ
1 Max
3.2 ± 0.2
12.0 ± 0.3
0.5 Max
0.6
8.45
8.2
4.3
2.79 ± 0.15
2.5 ± 0.2
2.1 ± 0.2
4.44 ± 0.20
2.5 ± 0.2
20.6
21.9
Hitachi Code JEDEC EIAJ Weight
(reference value)
SP-5TA — —
2.0 g
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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