HIT 2SK2980 Datasheet
Features
• Low on-resistance
R
= 0. 2Ω typ. (VGS = 4 V, ID = 500 mA)
DS(on)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
2SK2980
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-571B (Z)
3rd. Edition
Jun 1998
MPAK
G
3
1
D
S
2
1. Source
2. Gate
3. Drain
2SK2980
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)
30 V
+12 V
–10 V
1.0 A
4A
0.8 W
2
2SK2980
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
30——V I
voltage
Gate to source breakdown V
(BR)GSS
+12 — — V IG = +100µA, VDS = 0
voltage –10 — — V IG = –100µA, VDS = 0
Zero gate voltege drain
I
DSS
— — 1.0 µAV
current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
GS(off)
DS(on)
——±5.0 µAV
0.5 — 1.5 V ID = 10µA, VDS = 5V
— 0.2 0.28 Ω ID = 500 mA
resistance
Static drain to source on state
R
DS(on)
— 0.3 0.5 Ω ID = 500 mA
resistance
Forward transfer admittance |yfs| 1.2 2.0 — S ID = 500 mA
Input capacitance Ciss — 155 — pF VDS = 10V
Output capacitance Coss — 75 — pF VGS = 0
Reverse transfer capacitance Crss — 35 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
— 12 — ns VGS = 4V, ID = 500 mA
— 30 — ns RL = 20Ω
—35—ns
—30—ns
Note: 3. Pulse test
4. Marking is “ZZ– ”
= 100µA, VGS = 0
D
= 30 V, VGS = 0
DS
= ±8V, VDS = 0
GS
Note3
= 4V
V
GS
Note3
= 2.5V
V
GS
Note3
= 10V
V
DS
3
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