HIT 2SC4702 Datasheet
Application
High voltage amplifier
Features
• High breakdown voltage
V
= 300 V
CEO
• Small Cob
Cob = 1.5 pF Typ.
2SC4702
Silicon NPN Epitaxial
Outline
MPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC4702
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Collector to emitter saturation
V
CBO
CE(sat)
voltage
DC current transfer ratio h
Gain bandwidth product f
FE
T
Collector output capacitance Cob — 1.5 — pF VCB = 10 V, IE = 0, f = 1 MHz
Note: Marking is “XV–”.
300 — — V IC = 10 µA, IE = 0
300 — — V IC = 1 mA, RBE = ∞
5 ——V I
— — 0.1 µAVCB = 250 V, IE = 0
— — 0.5 V IC = 30 mA, IB = 3 mA
60 — 150 VCE = 6 V, IC = 2 mA
— 80 — MHz VCE = 6 V, IC = 5 mA
300 V
300 V
5V
50 mA
150 mW
= 10 µA, IC = 0
E
2
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