HIT 2SC4693 Datasheet
Silicon NPN Epitaxial Planar
Application
VHF Wide band amplifier
Features
• High gain bandwidth product
fT = 2.5 GHz Typ.
• Large collector power dissipation
PC = 900 mW
2SC4693
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SC4693
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C (peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Gain bandwidth product f
CBO
EBO
FE
T
Collector output capacitance Cob — 4.5 — pF VCB = 10 V, IE = 0, f = 1 MHz
30——V I
20——V I
— — 1.0 µAVCB = 25 V, IE = 0
——10µAVEB = 3 V, IC = 0
50 — 200 VCE = 5 V, IC = 50 mA
1.5 2.5 — GHz VCE = 5 V, IC = 50 mA
30 V
20 V
3V
300 mA
500 mA
900 mW
= 100 µA, IE = 0
C
= 1 mA, RBE = ∞
C
2
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