HIT 2SC4628 Datasheet

Application
High frequency amplifier
Outline
2SC4628
Silicon NPN Planar
1. Emitter
2. Collector
3. Base
3
2
1
2SC4628
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage Collector to emitter breakdown
V
(BR)CEO
voltage Emitter cutoff current I Collector cutoff current I DC current transfer ratio h Gain bandwidth product f
EBO
CBO
FE
T
Reverse transfer capacitance Cre 0.9 pF VCB = 10 V, IE = 0,
Power gain PG 10 dB VCB = 10 V, IC = 2 mA,
Noise figure NF 7.0 dB
20——V I
20——V I
——10µAVEB = 3 V, IC = 0 ——1 µAVCB = 15 V, IE = 0 60 320 VCE = 10 V, IC = 2 mA 600 MHz VCE = 10 V, IC = 2 mA
20 V 20 V 3V 20 mA 200 mW
= 10 µA, IE = 0
C
= 1 mA, RBE =
C
emitter common, f = 1 MHz
f = 800 MHz
2
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