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Application
UHF / VHF wide band amplifier
Outline
MPAK-4
2SC4592
Silicon NPN Epitaxial
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
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2SC4592
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.8 1.5 pF VCB = 5 V, IE = 0,
Gain bandwidth product f
T
Power gain PG 11.0 14.0 — dB VCE = 5 V, IC = 20 mA,
Noise figure NF — 1.2 2.5 dB VCE = 5 V, IC = 5 mA,
Note: Marking is “XN–”.
15——V I
——1 µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
40 120 250 VCE = 5 V, IC = 20 mA
7.0 9.5 — GHz VCE = 5 V, IC = 20 mA
15 V
9V
1.5 V
50 mA
150 mW
= 10 µA, IE = 0
C
= 9 V, RBE = ∞
CE
f = 1MHz
f = 900 MHz
f = 900 MHz
2
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Maximum Collector Dissipation Curve
150
(mW)
C
FE
200
160
2SC4592
DC Current Transfer Ratio
vs. Collector Current
VCE = 5 V
100
50
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Gain Bandwidth Product
vs. Collector Current
12.5
10.0
(GHz)
T
VCE = 5 V
7.5
5.0
2.5
Gain Bandwidth Product f
0
12
Collector Current I
1055020
(mA)
C
120
80
40
DC Current Transfer Ratio h
0
15010050
12
Collector Current I
1055020
(mA)
C
Collector Output Capacitance
vs. Collector to Base Voltage
1.1
(pF)
ob
1.0
IE = 0
f = 1 MHz
0.9
0.8
0.7
Collector Output Capacitance C
0.6
12
Collector to Base Voltage V
1055020
CB
(V)
3