HIT 2SC458LG, 2SC2310 Datasheet
2SC458 (LG), 2SC2310
Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SA1031 and 2SA1032
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC458 (LG), 2SC2310
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC458 (LG) 2SC2310 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
30 55 V
30 50 V
55V
100 100 mA
–100 –100 mA
200 200 mW
2
2SC458 (LG), 2SC2310
Electrical Characteristics (Ta = 25°C)
2SC458 (LG) 2SC2310
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Noise figure NF — 3 5 — 3 5 dB VCE = 6 V, IC = 0.1 mA,
Small signal input
impedance
Small signal voltage
feedback ratio
Small signal current
transfer ratio
Small signal output
admittance
Note: 1. The 2SC458 (LG) and 2SC2310 are grouped by hFE as follows.
BCD
2SC458 (LG) 100 to 200 160 to 320 250 to 500
2SC2310 100 to 200 160 to 320 —
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
BE
T
30 — — 55 — — V IC = 10 µA, IE = 0
30 — — 50 — — V IC = 1 mA, RBE = ∞
5 ——5 ——V IE = 10 µA, IC = 0
— — 0.5 — — 0.5 µAVCB =18 V, IE = 0
— — 0.5 — — 0.5 µAVEB = 2 V, IC = 0
1
100 — 500 100 — 320 VCE = 12 V, IC = 2 mA
— — 0.2 — — 0.2 V IC = 10 mA, IB = 1 mA
— 0.67 0.75 — 0.67 0.75 V VCE = 12 V, IC = 2 mA
— 230 — — 230 — MHz VCE = 12 V, IC = 2 mA
Cob — 1.8 3.5 — 1.8 3.5 pF VCB = 10 V, IE = 0,
f = 1 MHz
f = 120 Hz, R
h
ie
— 16.5 — — 16.5 — kΩ VCE = 5V, IC = 0.1mA,
= 500 Ω
g
f = 270 Hz
h
re
h
fe
h
oe
—70——70—× 10
— 130 — — 130 —
— 11.0 — — 11.0 — µS
–6
3
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