HIT 2SC4500(S), 2SC4500(L) Datasheet
2SC4500(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
1
2, 4
3
2SC4500(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
60 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
7V
Collector current I
C
1A
Collector peak current I
C (peak)
2A
Collector power dissipation P
C
0.8 W
PC*
1
8
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
60 — — V IC = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7——VI
E
= 0.1 mA, IC = 0
Collector cutoff current I
CBO
——10µAV
CB
= 60 V, IE = 0
DC current transfer ratio h
FE
2000 — — VCE = 10 V, IC = 500 mA*
1
Collector to emitter saturation
voltage
V
CE (sat)
— — 1.5 V IC = 500 mA, IB = 0.5 mA*
1
Base to emitter saturation
voltage
V
BE (sat)
— — 2.0 V IC = 500 mA, IB = 0.5 mA*
1
Turn on time t
on
— 100 — ns VCC = 12 V, IC = 250 mA,
Turn off time t
off
— 600 — ns IB1 = –IB2 = 5 mA
Note: 1. Pulse Test.
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