HIT 2SC2309 Datasheet

2SC2309

Silicon NPN Epitaxial

Application

Low frequency amplifier

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC2309

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	55	V
Collector to emitter voltage	VCEO	50	V
Emitter to base voltage	VEBO	5	V
Collector current	IC	100	mA
Collector power dissipation	PC	200	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	55	—	—	V	I	C = 10 A, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	50	—	—	V	I	C = 1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	5	—	—	V	I	E = 10 A, IC = 0
voltage
Collector cutoff current	ICBO	—	—	0.5	A	VCB = 18 V, IE = 0
Emitter cutoff current	IEBO	—	—	0.5	A	VEB = 2 V, IC = 0
DC current transfer ratio	h *1	250	—	1200		V	CE	= 12 V, I = 2 mA
	FE							C
Base to emitter voltage	VBE	—	—	0.75	V	V	CE = 12 V, IC = 2 mA
Collector to emitter saturation	VCE(sat)	—	—	0.2	V	I	C = 10 mA, IB = 1 mA
voltage
Gain bandwidth product	fT	—	230	—	MHz	V	CE = 12 V, IC = 2 mA
Collector output capacitance	Cob	—	1.8	3.5	pF	V CB = 10 V, IE = 0, f = 1 MHz

Note: 1. The 2SC2309 is grouped by hFE as follows.

D	E	F
250 to 500	400 to 800	600 to 1200

See characteristic curves of 2SC1345.

2